Calculation of phase diagrams in AlxIn1-xAs/InP, AsxSb1-xAl/InP and AlxIn1-xSb/InSb nano-film systems

通讯作者地址: Liu, XJ (通讯作者), Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Res Ctr Mat Design & Applicat, Xiamen 361005, Peoples R China 地址: 1. Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Res Ctr Mat Design & Applicat, Xiamen 361005, Peoples R China 电子邮件地址: [email protected] models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the AlxIn1-xAs and AsxSb1-xAl thin films grown on the InP (1 0 0) substrate, and the AlxIn1-xSb thin films grown on the Insb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 mu m, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams. (C) 2009 Elsevier B.V. All rights reserved.National Natural Science Foundation of China 50425101 50571084 Ministry of Science and Technology 2009DFA5217