Localized Distributions of Quasi Two-Dimensional Electronic States near Defects Artificially Created at Graphite Surfaces in Magnetic Fields

We measured the local density of states of a quasi two-dimensional electron system (2DES) near defects, artificially created by Ar-ion sputtering, on surfaces of highly oriented pyrolytic graphite (HOPG) with scanning tunneling spectroscopy (STS) in high magnetic fields. At valley energies of the Landau level spectrum, we found two typical localized distributions of the 2DES depending on the defects. These are new types of distributions which are not observed in the previous STS work at the HOPG surface near a point defect [Y. Niimi \textit{et al}., Phys. Rev. Lett. {\bf 97}, 236804 (2006).]. With increasing energy, we observed gradual transformation from the localized distributions to the extended ones as expected for the integer quantum Hall state. We show that the defect potential depth is responsible for the two localized distributions from comparison with theoretical calculations.Comment: 4 pages, 3 figure

Indication of intrinsic spin Hall effect in 4d and 5d transition metals

We have investigated spin Hall effects in 4$d$ and 5$d$ transition metals, Nb, Ta, Mo, Pd and Pt, by incorporating the spin absorption method in the lateral spin valve structure; where large spin current preferably relaxes into the transition metals, exhibiting strong spin-orbit interactions. Thereby nonlocal spin valve measurements enable us to evaluate their spin Hall conductivities. The sign of the spin Hall conductivity changes systematically depending on the number of $d$ electrons. This tendency is in good agreement with the recent theoretical calculation based on the intrinsic spin Hall effect.Comment: 5 pages, 4 figure

Temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O8+δ_{8+\delta} by Scanning Tunneling Spectroscopy

We report on the temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+\delta}$ by scanning tunneling spectroscopy at 30 mK < T < 52 K. It is known that a Zn impurity induces a sharp resonant peak in tunnel spectrum at an energy close to the Fermi level. We observed that the resonant peak survives up to 52 K. The peak broadens with increasing temperature, which is explained by the thermal effect. This result provides information to understand the origin of the resonant peak.Comment: 4 pages, 3 figures, to appear in Phys. Rev.

Micropropagation of Vitis amurensis Rupr.: An improved protocol

Research NoteAn efficient micropropagation procedure of V. amurensis cv. Zuoshan 1 was established. NAA combined with BA resulted in callus formation and inhibition of shoot growth, whereas a combination of 0.3 M IAA and 4.4 M BA gave highest shoot growth and multiplication. IAA at 2.8 and 5.7 M led to high root formation of shoots. 30 g l-1 sucrose was needed for high shoot growth, while high rooting was achieved with 0-20 g l-1 sucrose. Intact leaves are required for a high level of shoot rooting.

Scanning tunneling microscopy and spectroscopy studies of graphite edges

We studied experimentally and theoretically the electronic local density of states (LDOS) near single step edges at the surface of exfoliated graphite. In scanning tunneling microscopy measurements, we observed the $(\sqrt{3} \times \sqrt{3}) R 30^{\circ}$ and honeycomb superstructures extending over 3$-$4 nm both from the zigzag and armchair edges. Calculations based on a density-functional derived non-orthogonal tight-binding model show that these superstructures can coexist if the two types of edges admix each other in real graphite step edges. Scanning tunneling spectroscopy measurements near the zigzag edge reveal a clear peak in the LDOS at an energy below the Fermi energy by 20 meV. No such a peak was observed near the armchair edge. We concluded that this peak corresponds to the "edge state" theoretically predicted for graphene ribbons, since a similar prominent LDOS peak due to the edge state is obtained by the first principles calculations.Comment: 4 pages, 6 figures, APF9, Appl. Surf. Sci. \bf{241}, 43 (2005

Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.Comment: 5 pages, 4 figure