778 research outputs found
Radiative Corrections to Longitudinal and Transverse Gauge Boson and Higgs Production
Radiative corrections to gauge boson and Higgs production computed recently
using soft-collinear effective theory (SCET) require the one-loop high-scale
matching coefficients in the standard model. We give explicit expressions for
the matching coefficients for the effective field theory (EFT) operators for q
qbar -> VV and q qbar -> phi^+ phi for a general gauge theory with an arbitrary
number of gauge groups. The group theory factors are given explicitly for the
standard model, including both QCD and electroweak corrections.Comment: 16 pages, 49 figure
Four-point resistance of individual single-wall carbon nanotubes
We have studied the resistance of single-wall carbon nanotubes measured in a
four-point configuration with noninvasive voltage electrodes. The voltage drop
is detected using multiwalled carbon nanotubes while the current is injected
through nanofabricated Au electrodes. The resistance at room temperature is
shown to be linear with the length as expected for a classical resistor. This
changes at cryogenic temperature; the four-point resistance then depends on the
resistance at the Au-tube interfaces and can even become negative due to
quantum-interference effects.Comment: 4 pages, 4 figure
Hooge's Constant of Carbon Nanotube Field Effect Transistors
The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a
field effect transistor configuration has been measured in ultra-high vacuum
and following exposure to air. The amplitude of the normalized current spectral
noise density is independent of source-drain current, indicating the noise is
due to mobility rather than number fluctuations. Hooge's constant for s-CNT is
found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is
substantially degreased by exposing the devices to air
Fano effect in a ring-dot system with tunable coupling
Transport measurements are presented on a quantum ring that is tunnel-coupled
to a quantum dot. When the dot is in the Coulomb blockade regime, but strongly
coupled to the open ring, Fano line shapes are observed in the current through
the ring, when the electron number in the dot changes by one. The symmetry of
the Fano resonances is found to depend on the magnetic flux penetrating the
area of the ring and on the strength of the ring-dot coupling. At temperatures
above T=0.65 K the Fano effect disappears while the Aharonov-Bohm interference
in the ring persists up to T=4.2 K. Good agreement is found between these
experimental observations and a single channel scattering matrix model
including decoherence in the dot.Comment: 9 pages, 6 figure
Electrostatically confined Quantum Rings in bilayer Graphene
We propose a new system where electron and hole states are electrostatically
confined into a quantum ring in bilayer graphene. These structures can be
created by tuning the gap of the graphene bilayer using nanostructured gates or
by position-dependent doping. The energy levels have a magnetic field ()
dependence that is strikingly distinct from that of usual semiconductor quantum
rings. In particular, the eigenvalues are not invariant under a
transformation and, for a fixed total angular momentum index , their field
dependence is not parabolic, but displays two minima separated by a saddle
point. The spectra also display several anti-crossings, which arise due to the
overlap of gate-confined and magnetically-confined states.Comment: 5 pages, 6 figures, to appear in Nano Letter
Insulating behavior in ultra-thin bismuth selenide field effect transistors
Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological
insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si
susbtrates. Temperature- and gate-voltage dependent conductance measurements
show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at
negative gate voltage, with activated temperature-dependent conductance and
energy barriers up to 250 meV
Localization, Coulomb interactions and electrical heating in single-wall carbon nanotubes/polymer composites
Low field and high field transport properties of carbon nanotubes/polymer
composites are investigated for different tube fractions. Above the percolation
threshold f_c=0.33%, transport is due to hopping of localized charge carriers
with a localization length xi=10-30 nm. Coulomb interactions associated with a
soft gap Delta_CG=2.5 meV are present at low temperature close to f_c. We argue
that it originates from the Coulomb charging energy effect which is partly
screened by adjacent bundles. The high field conductivity is described within
an electrical heating scheme. All the results suggest that using composites
close to the percolation threshold may be a way to access intrinsic properties
of the nanotubes by experiments at a macroscopic scale.Comment: 4 pages, 5 figures, Submitted to Phys. Rev.
Colloquium: The transport properties of graphene: An introduction
An introduction to the transport properties of graphene combining
experimental results and theoretical analysis is presented. In the theoretical
description simple intuitive models are used to illustrate important points on
the transport properties of graphene. The concept of chirality, stemming from
the massless Dirac nature of the low energy physics of the material, is shown
to be instrumental in understanding its transport properties: the conductivity
minimum, the electronic mobility, the effect of strain, the weak
(anti-)localization, and the optical conductivity.Comment: As publishe
Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes
We use electrostatic force microscopy and scanned gate microscopy to probe
the conducting properties of carbon nanotubes at room temperature. Multi-walled
carbon nanotubes are shown to be diffusive conductors, while metallic
single-walled carbon nanotubes are ballistic conductors over micron lengths.
Semiconducting single-walled carbon nanotubes are shown to have a series of
large barriers to conduction along their length. These measurements are also
used to probe the contact resistance and locate breaks in carbon nanotube
circuits.Comment: 4 page
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