Exercise and Polycystic Ovary Syndrome.

Polycystic ovary syndrome (PCOS) is a complex endocrinopathy affecting both the metabolism and reproductive system of women of reproductive age. Prevalence ranges from 6.1-19.9% depending on the criteria used to give a diagnosis. PCOS accounts for approximately 80% of women with anovulatory infer-tility, and causes disruption at various stages of the reproductive axis. Evidence suggests lifestyle modification should be the first line of therapy for women with PCOS. Several studies have examined the impact of exercise interventions on reproductive function, with results indicating improvements in menstrual and/or ovulation frequency following exercise. Enhanced insulin sensitivity underpins the mechanisms of how exercise restores reproductive function. Women with PCOS typically have a cluster of metabolic abnormalities that are risk factors for CVD. There is irrefutable evidence that exercise mitigates CVD risk factors in women with PCOS. The mechanism by which exercise improves many CVD risk factors is again associated with improved insulin sensitivity and decreased hyperinsulinemia. In addition to cardiometabolic and reproductive complications, PCOS has been associated with an increased prevalence of mental health disorders. Exercise improves psychological well-being in women with PCOS, dependent on certain physiological factors. An optimal dose-response relationship to exercise in PCOS may not be feasible because of the highly individualised characteristics of the disorder. Guidelines for PCOS suggest at least 150 min of physical activity per week. Evidence confirms that this should form the basis of any clinician or healthcare professional prescription

Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene/MoS2 heterostructure-based photodetectors

Abstract We report on outstanding photo-responsivity, R > 103 A/W, fast response (~0.1 s), and broadband sensitivity ranging from the UV to the NIR in two terminal graphene/MoS2 photodetectors. Our devices are based on the deterministic transfer of MoS2 on top of directly grown graphene on sapphire, and their performance outperforms previous similar photodetectors using large-scale grown graphene. Here we devise a protocol for the direct growth of transparent (transmittance, Tr > 90%), highly conductive (sheet resistance, R □  < 1 kΩ) uniform and continuous graphene films on sapphire at 700 °C by using plasma-assisted chemical vapor deposition (CVD) with C2H2/H2 gas mixtures. Our study demonstrates the successful use of plasma-assisted low-temperature CVD techniques to directly grow graphene on insulators for optoelectronic applications