547 research outputs found
On the hole accelerator for III-nitride light-emitting diodes
In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed. © 2016 Author(s)
A charge inverter for III-nitride light-emitting diodes
In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a semiconductor, making an Electrode-Insulator-Semiconductor (EIS) structure, which is formed by depositing an extremely thin SiO2 insulator layer on the p+-GaN surface of a LED structure before growing the p-electrode. When the LED is forward-biased, a weak inversion layer can be obtained at the interface between the p+-GaN and SiO2 insulator. The weak inversion region can shorten the carrier tunnel distance. Meanwhile, the smaller dielectric constant of the thin SiO2 layer increases the local electric field within the tunnel region, and this is effective in promoting the hole transport from the p-electrode into the p+-GaN layer. Due to the improved hole injection, the external quantum efficiency is increased by 20% at 20 mA for the 350 × 350 μm2 LED chip. Thus, the proposed EIS holds great promise for high efficiency LEDs. © 2016 AIP Publishing LLC
Mass measurements of neutron-deficient Y, Zr, and Nb isotopes and their impact on rp and νp nucleosynthesis processes
© 2018 The Authors. Published by Elsevier B.V. This manuscript is made available under the terms of the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International licence (CC BY-NC-ND 4.0). For further details please see: https://creativecommons.org/licenses/by-nc-nd/4.0/Using isochronous mass spectrometry at the experimental storage ring CSRe in Lanzhou, the masses of 82Zr and 84Nb were measured for the first time with an uncertainty of ∼10 keV, and the masses of 79Y, 81Zr, and 83Nb were re-determined with a higher precision. The latter are significantly less bound than their literature values. Our new and accurate masses remove the irregularities of the mass surface in this region of the nuclear chart. Our results do not support the predicted island of pronounced low α separation energies for neutron-deficient Mo and Tc isotopes, making the formation of Zr–Nb cycle in the rp-process unlikely. The new proton separation energy of 83Nb was determined to be 490(400) keV smaller than that in the Atomic Mass Evaluation 2012. This partly removes the overproduction of the p-nucleus 84Sr relative to the neutron-deficient molybdenum isotopes in the previous νp-process simulations.Peer reviewe
Influence of gold-silica nanoparticles on the performance of small-molecule bulk heterojunction solar cells
Light trapping by gold (Au)-silica nanospheres and nanorods embedded in the active layer of small-molecule (SM) organic solar cell has been systematically compared. Nanorod significantly outperforms nanosphere because of more light scattering and higher quality factor for localized surface plasmon resonance (LSPR) triggered by nanorods. The optimum concentration of nanorod was characterized by charge carrier transport and morphology of the active layers. At optimum nanorod concentration, almost no change in the morphology of the active layer reveals that LSPR and scattering effects rather than the morphology are mainly responsible for the enhanced power conversion efficiency. In addition, the preliminary lifetime studies of the SM solar cells with and without Au-silica nanorods were conducted by measuring the current density-voltage characteristics over 20 days. The results show that plasmonic device with nanorods has no adverse impact on the device stability ©2015 Elsevier B.V. All rights reserved
Anomaly analysis of Hawking radiation from Kaluza-Klein black hole with squashed horizon
Considering gravitational and gauge anomalies at the horizon, a new method
that to derive Hawking radiations from black holes has been developed by
Wilczek et al. In this paper, we apply this method to non-rotating and rotating
Kaluza-Klein black holes with squashed horizon, respectively. For the rotating
case, we found that, after the dimensional reduction, an effective U(1) gauge
field is generated by an angular isometry. The results show that the gauge
current and energy-momentum tensor fluxes are exactly equivalent to Hawking
radiation from the event horizon.Comment: 15 pages, no figures, the improved version, accepted by Eur. Phys. J.
Measurements of the observed cross sections for exclusive light hadrons containing at , 3.650 and 3.6648 GeV
By analyzing the data sets of 17.3, 6.5 and 1.0 pb taken,
respectively, at , 3.650 and 3.6648 GeV with the BES-II
detector at the BEPC collider, we measure the observed cross sections for
, , ,
and at the three energy
points. Based on these cross sections we set the upper limits on the observed
cross sections and the branching fractions for decay into these
final states at 90% C.L..Comment: 7 pages, 2 figure
Partial wave analysis of J/\psi \to \gamma \phi \phi
Using events collected in the BESII detector, the
radiative decay is
studied. The invariant mass distribution exhibits a near-threshold
enhancement that peaks around 2.24 GeV/.
A partial wave analysis shows that the structure is dominated by a
state () with a mass of
GeV/ and a width of GeV/. The
product branching fraction is: .Comment: 11 pages, 4 figures. corrected proof for journa
Direct Measurements of Absolute Branching Fractions for D0 and D+ Inclusive Semimuonic Decays
By analyzing about 33 data sample collected at and around 3.773
GeV with the BES-II detector at the BEPC collider, we directly measure the
branching fractions for the neutral and charged inclusive semimuonic decays
to be and , and determine the ratio of the two branching
fractions to be
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