Plasma Processing of III-V Materials for Energy Efficient Electronics Applications

This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors. Atomic layer etching suitable for controllable recess etching in GaN power transistors will be discussed. In addition, plasma based surface passivation techniques will be reviewed for a variety of compound semiconductor materials ((100) and (110) oriented InGaAs and InGaSb)

Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga_0.7In_0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al₂O₃

This work presents, to the best of the authors knowledge, the first experimental findings on the impact of in situ H<sub>2</sub> plasma exposure to the electrical properties of the interface between p-type Ga<sub>0.7</sub>In<sub>0.3</sub>Sb and atomic layer deposited Al<sub>2</sub>O<sub>3</sub>. The effects of trimethyl aluminium (TMA) exposure prior to Al<sub>2</sub>O<sub>3</sub> deposition, and of a post gate metal forming gas anneal (FGA) are also investigated. The control sample, which was subjected to an ex situ HCl clean prior to ALD only, demonstrated a capacitance modulation of 36.29 % before FGA. This degraded for samples exposed to the H<sub>2</sub> plasma for all plasma powers investigated. TMA exposure offered no improvement, and significantly increased the frequency dispersion in accumulation for all samples. A post gate metal FGA at 350 °C for 15 minutes was found to substantially improve the interface quality, with the capacitance modulation, frequency dispersion in accumulation and dC/dV improving by as much as 190 %, 91 %, and 170 % respectively

Revisiting the Ω(2012)\Omega(2012) as a hadronic molecule and its strong decays

Recently, the Belle collaboration measured the ratios of the branching fractions of the newly observed $\Omega(2012)$ excited state. They did not observe significant signals for the $\Omega(2012) \to \bar{K} \Xi^*(1530) \to \bar{K} \pi \Xi$ decay, and reported an upper limit for the ratio of the three body decay to the two body decay mode of $\Omega(2012) \to \bar{K} \Xi$. In this work, we revisit the newly observed $\Omega(2012)$ from the molecular perspective where this resonance appears to be a dynamically generated state with spin-parity $3/2^-$ from the coupled channels interactions of the $\bar{K} \Xi^*(1530)$ and $\eta \Omega$ in $s$-wave and $\bar{K} \Xi$ in $d$-wave. With the model parameters for the $d$-wave interaction, we show that the ratio of these decay fractions reported recently by the Belle collaboration can be easily accommodated.Comment: Published version. Published in Eur.\ Phys.\ J.\ C {\bf 80}, 361 (2020