DataSheet_1_Association between increased BMI and cognitive function in first-episode drug-naïve male schizophrenia.docx

ObjectiveAlthough the adverse effects of obesity in schizophrenia are documented, there is limited research exists on the implications for untreated initial schizophrenia. Our investigation aimed to explore the connections between BMI and cognitive function in first-episode drug-naïve (FEDN)schizophrenia.MethodsWe enrolled 143 FEDN schizophrenia patients, and collected data on their body mass index, fasting blood glucose and lipid levels. Cognitive function was measured with the MATRICS Consensus Cognitive Battery (MCCB). Using correlation and regression analysis to assess the relationship between BMI and cognitive performance.ResultsThe prevalence rate of overweight plus obesity in FEDN schizophrenia patients was 33.57%. Patients with FEDN schizophrenia exhibited extensive cognitive impairment, and those who were overweight/obesity demonstrated more severe impairments in working memory and visual learning when compared to normal/under weight counterparts. Correlation analysis indicated a negative association between working memory and BMI and TG, as well as a link between visual learning and BMI and LDL-C. Multiple linear regression analysis revealed that a higher BMI predicted a decrease in working memory in FEDN schizophrenia patients.ConclusionOur results indicate that the rate of overweight plus obesity is high in FEDN schizophrenia patients, and there is an association between BMI and cognitive function in schizophrenia, particularly in relation to working memory.</p

Robust Strain in Freestanding Single-Crystal SrRuO₃ Membranes

Freestanding membranes provide a unique opportunity to integrate complex oxides with mature semiconductor technologies and flexible electronics. It is known that the physical functionalities of complex oxides can be modified by epitaxial strain induced by the underneath substrates. The strain release may degrade the physical properties of the freestanding oxide membranes. Here, we demonstrate that various strain states in the pristine epitaxial films can be well preserved in the freestanding single-crystal SrRuO3 (SRO) membranes using the sacrificial layers with high lattice flexibility. Tensile and compressive strains are induced by the water-soluble sacrificial layers of Sr3Al2O6 (SAO) and Sr2CaAl2O6 (SCAO) on SrTiO3 substrates, respectively. An atomically flat surface morphology and initial strain states are maintained in the freestanding SRO membranes after etching the SAO and SCAO layers in water. In light of this, the electrical and magnetic properties of the SRO membranes are comparable to those of the corresponding strained films before exfoliation but completely different from those of the fully relaxed SRO films. The robust strain in the freestanding membranes offers the ability to integrate the strain-modified functionality of complex oxides with the conventional silicon-based semiconductor or flexible electronics