Magnetoconductivity in Weyl semimetals: Effect of chemical potential and temperature

We present the detailed analyses of magneto-conductivities in a Weyl semimetal within Born and self-consistent Born approximations. In the presence of the charged impurities, the linear magnetoresistance can happen when the charge carriers are mainly from the zeroth (n=0) Landau level. Interestingly, the linear magnetoresistance is very robust against the change of temperature, as long as the charge carriers mainly come from the zeroth Landau level. We denote this parameter regime as the high-field regime. On the other hand, the linear magnetoresistance disappears once the charge carriers from the higher Landau levels can provide notable contributions. Our analysis indicates that the deviation from the linear magnetoresistance is mainly due to the deviation of the longitudinal conductivity from the $1/B$ behavior. We found two important features of the self-energy approximation: 1. a dramatic jump of $\sigma_{xx}$, when the $n=1$ Landau level begins to contribute charge carriers, which is the beginning point of the middle-field regime, when decreasing the external magnetic field from high field; 2. In the low-field regime $\sigma_{xx}$ shows a $B^{-5/3}$ behavior and results the magnetoresistance $\rho_{xx}$ to show a $B^{1/3}$ behavior. The detailed and careful numerical calculation indicates that the self-energy approximation (including both the Born and the self-consistent Born approximations) does not explain the recent experimental observation of linear magnetoresistance in Weyl semimetals.Comment: The accepted version. Extending the previous version by including the discussions of self-consistent Born approximatio

Performance analysis of the IEEE 802.11e block ACK scheme in a noisy channel

A block ACK (BTA) scheme has been proposed in IEEE 802.11e to improve medium access control (MAC) layer performance. It is also a promising technique for next-generation high-speed wireless LANs (WLANs) such as IEEE 802.11n. We present a theoretical model to evaluate MAC saturation throughput of this scheme. This model takes into account the effects of both collisions and transmission errors in a noisy channel. The accuracy of this model is validated by NS-2 simulations

On the Head and the Tail of the Colored Jones Polynomial

The colored Jones polynomial is a series of one variable Laurent polynomials J(K,n) associated with a knot K in 3-space. We will show that for an alternating knot K the absolute values of the first and the last three leading coefficients of J(K,n) are independent of n when n is sufficiently large. Computation of sample knots indicates that this should be true for any fixed leading coefficient of the colored Jones polynomial for alternating knots. As a corollary we get a Volume-ish Theorem for the colored Jones Polynomial.Comment: 14 pages, 6 figure

B\"{a}cklund transformations for the constrained dispersionless hierarchies and dispersionless hierarchies with self-consistent sources

The B\"{a}cklund transformations between the constrained dispersionless KP hierarchy (cdKPH) and the constrained dispersionless mKP hieararchy (cdmKPH) and between the dispersionless KP hieararchy with self-consistent sources (dKPHSCS) and the dispersionless mKP hieararchy with self-consistent sources (dmKPHSCS) are constructed. The auto-B\"{a}cklund transformations for the cdmKPH and for the dmKPHSCS are also formulated.Comment: 11 page

Identification of the major cause of endemically poor mobilities in SiC/SiO2 structures

Materials with good carrier mobilities are desired for device applications, but in real devices the mobilities are usually limited by the presence of interfaces and contacts. Mobility degradation at semiconductor-dielectric interfaces is generally attributed to defects at the interface or inside the dielectric, as is the case in Si/SiO2 structures, where processing does not introduce detrimental defects in the semiconductor. In the case of SiC/SiO2 structures, a decade of research focused on reducing or passivating interface and oxide defects, but the low mobilities have persisted. By invoking theoretical results and available experimental evidence, we show that thermal oxidation generates carbon di-interstitial defects inside the semiconductor substrate and that they are a major cause of the poor mobility in SiC/SiO2 structures