Loss Dependence on Geometry and Applied Power in Superconducting Coplanar Resonators

The loss in superconducting microwave resonators at low-photon number and low temperatures is not well understood but has implications for achievable coherence times in superconducting qubits. We have fabricated single-layer resonators with a high quality factor by patterning a superconducting aluminum film on a sapphire substrate. Four resonator geometries were studied with resonant frequencies ranging from 5 to 7 GHz: a quasi-lumped element resonator, a coplanar strip waveguide resonator, and two hybrid designs that contain both a coplanar strip and a quasi-lumped element. Transmitted power measurements were taken at 30 mK as a function of frequency and probe power. We find that the resonator loss, expressed as the inverse of the internal quality factor, decreases slowly over four decades of photon number in a manner not merely explained by loss from a conventional uniform spatial distribution of two-level systems in an oxide layer on the superconducting surfaces of the resonator.Comment: 4 pages, 5 figures, Submitted to ASC 2010 conference proceeding

Two stage superconducting quantum interference device amplifier in a high-Q gravitational wave transducer

We report on the total noise from an inductive motion transducer for a gravitational-wave antenna. The transducer uses a two-stage SQUID amplifier and has a noise temperature of 1.1 mK, of which 0.70 mK is due to back-action noise from the SQUID chip. The total noise includes thermal noise from the transducer mass, which has a measured Q of 2.60 X 10^6. The noise temperature exceeds the expected value of 3.5 \mu K by a factor of 200, primarily due to voltage noise at the input of the SQUID. Noise from flux trapped on the chip is found to be the most likely cause.Comment: Accepted by Applied Physics Letters tentatively scheduled for March 13, 200

Surface Resistance Imaging with a Scanning Near-Field Microwave Microscope

We describe near-field imaging of sample sheet resistance via frequency shifts in a resonant coaxial scanning microwave microscope. The frequency shifts are related to local sample properties, such as surface resistance and dielectric constant. We use a feedback circuit to track a given resonant frequency, allowing measurements with a sensitivity to frequency shifts as small as one parts in 50000 for a 30 ms sampling time. The frequency shifts can be converted to sheet resistance based on a simple model of the system.Comment: 6 pages, 3 figures; for color versions of figures see www.csr.umd.edu/research/hifreq/micr_microscopy.htm

Hot electron heatsinks for microwave attenuators below 100 mK

We demonstrate improvements to the cooling power of broad bandwidth (10 GHz) microwave attenuators designed for operation at temperatures below 100 mK. By interleaving 9-$\mu$m thick conducting copper heatsinks in between 10-$\mu$m long, 70-nm thick resistive nichrome elements, the electrical heat generated in the nichrome elements is conducted more readily into the heatsinks, effectively decreasing the thermal resistance between the hot electrons and cold phonons. For a 20 dB attenuator mounted at 20 mK, a minimum noise temperature of $T_{n} \sim$ 50 mK was obtained for small dissipated powers ($P_d <$ 1 nW) in the attenuator. For higher dissipated powers we find $T_n \propto P_{d}^{(1/4.4)}$, with $P_{d} =$ 100 nW corresponding to a noise temperature of 90 mK. This is in good agreement with thermal modeling of the system and represents nearly a factor of 20 improvement in cooling power, or a factor of 1.8 reduction in $T_n$ for the same dissipated power, when compared to a previous design without interleaved heatsinks.Comment: 5 Pages, 3 figure

Imaging of Microwave Permittivity, Tunability, and Damage Recovery in (Ba,Sr)TiO3 Thin Films

We describe the use of a near-field scanning microwave microscope to quantitatively image the dielectric permittivity and tunability of thin-film dielectric samples on a length scale of 1 micron. We demonstrate this technique with permittivity images and local hysteresis loops of a 370 nm thick barium strontium titanate thin film at 7.2 GHz. We also observe the role of annealing in the recovery of dielectric tunability in a damaged region of the thin film. We can measure changes in relative permittivity as small as 2 at 500, and changes in dielectric tunability as small as 0.03 V$^{-1}$.Comment: 5 pages, 2 figures. To be published in Applied Physics Letters, Nov. 15, 199