5,052 research outputs found
Investigation of new concepts of adaptive devices Quarterly technical report, 15 Sep. - 14 Dec. 1968
Heat and light effects on charge storage of silicon nitride memory capacitor following high temperature exposure in hydrogen and ammoni
Self-consistent calculation of metamaterials with gain
We present a computational scheme allowing for a self-consistent treatment of
a dispersive metallic photonic metamaterial coupled to a gain material
incorporated into the nanostructure. The gain is described by a generic
four-level system. A critical pumping rate exists for compensating the loss of
the metamaterial. Nonlinearities arise due to gain depletion beyond a certain
critical strength of a test field. Transmission, reflection, and absorption
data as well as the retrieved effective parameters are presented for a lattice
of resonant square cylinders embedded in layers of gain material and split ring
resonators with gain material embedded into the gaps.Comment: 5 pages, 6 figure
Investigation of new concepts of adaptive devices Quarterly technical report, 15 Jun. - 14 Sep. 1967
Insulated gate field effect transistor with adaptive and memory characteristic
Drilling Down: New York, Hydraulic Fracturing, and the Dormant Commerce Clause
The debate surrounding hydraulic fracturing and natural gas development from shale rock needs no embellishment. This highly sought resource and highly fought drilling technique trigger significant concerns: human health, energy independence, national security, water safety, air quality, agricultural well-being, outdoor aesthetic impairment, government involvement at all levels and by all branches, and economic development and sustainability. Whether actively participating in this conversation or not, everyone has a stake in the resolution of whether to allow this technique to be utilized and these resources to be produced
Investigation of new concepts of adaptive devices Quarterly technical report, 3 Dec. 1968 - 2 Mar. 1969
Conduction mechanisms and transient behavior of memory device using semiconductor device
An investigation of the effects of radiation on silicon nitride insulated gate /MNS/ transistors Final report
Radiation effects on silicon nitride insulated gate field effect transistor
Investigation of new concepts of adaptive devices Quarterly technical report, 3 Mar. - 2 Jun. 1969
Charge decay processes in memory device and in new metal nitride semiconductor light-sensitive memory elemen
Single-cycle gap soliton in a subwavelength structure
We demonstrate that a single sub-cycle optical pulse can be generated when a
pulse with a few optical cycles penetrates through resonant two-level dense
media with a subwavelength structure. The single-cycle gap soliton phenomenon
in the full Maxwell-Bloch equations without the frame of slowly varying
envelope and rotating wave approximations is observed. Our study shows that the
subwavelength structure can be used to suppress the frequency shift caused by
intrapulse four-wave mixing in continuous media and supports the formation of
single-cycle gap solitons even in the case when the structure period breaks the
Bragg condition. This suggests a way toward shortening high-intensity laser
fields to few- and even single-cycle pulse durations.Comment: 4 pages, 6 figure
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