Promoting sensitivity and selectivity of HCHO sensor based on strained InP₃ monolayer: A DFT study

Sensitive materials for formaldehyde (HCHO) sensor need high sensitivity and selectivity. The research on two dimensional (2D) sensitive material is growing, and most studies focus on the pristine or modified graphene. So it is essential to introduce other 2D materials into HCHO gas sensor. In this report, the adsorption behaviors of organic gas molecules including C2H6, C2H4, C2H2, C6H6, C2H5OH and HCHO over indium triphosphide (InP3) monolayer were studied by using first-principle atomistic simulations. The calculation results demonstrate that InP3 monolayer has a high sensitivity and selectivity to HCHO than others. By comparing the structures and adsorption results of InP3 monolayer, graphene and single-layered MoS2, it was found that the polarity bonds and steric effect of the site on monolayer play an important role in the detection of HCHO. The effect of strain on the gas/substrate adsorption systems was also studied, implying that the stained InP3 monolayer could enhance the sensitivity and selectivity to HCHO. This study provides useful insights into the gas-surface interaction that may assist future experimental development of 2D material for HCHO sensing and performance optimization based on strain.Accepted author manuscriptElectronic Components, Technology and Material

Investigation of Unclamped Inductive Switch Characteristics in 4H-SiC MOSFETs With Different Cell Topologies

To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the linear cell topology is 1.69 times higher than that of the square and 1.49 times that of the hexagon. Further, the UIS process is simulated by using physical simulation, which shows that the avalanche energy was concentrated near the corner of the P-base region in the UIS mode. From this, the avalanche energy distribution differences of the four cell topologies were analyzed and compared. A theoretical model of avalanche heating per unit area is proposed, which shows that the avalanche energy density is inversely proportional to the proportion of avalanche energy concentration region. This study may contribute to the cell topology design of SiC MOSFETs under the application scenario with high avalanche reliability requirements.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Electronic Components, Technology and Material