Gradient Oxygen Modulation for Junctionless Electric-Double-Layer IZO-based Synaptic Transistors

Junctionless electric-double layer (EDL) transistors with gradient oxygen modulated IZO layers are proposed to emulate the biological synapse. The threshold voltage of the junctionless EDL transistors is shifted from - 0.40 V to 0.48 V as increasing the oxygen partial pressure during IZO deposition. And the estimated energy consumption of an individual excitatory post-synaptic current (EPSC) synaptic process can be reduced when the threshold voltage of the junctionless IZO EDL synaptic transistors are shifted positively. Short-term plasticity (STP) and long-term potentiation (LTP) is also demonstrated in such junctionless IZO-based EDL synaptic transistor

Classical Conditioning Mimicked in Junctionless IZO Electric-Double-Layer Thin-Film Transistors

Classical conditioning, a fundamental property in associative learning, has aroused a wide range of interests in neuromorphic engineering. Here, junctionless indium-zinc-oxide (IZO)-based electric-double-layer transistors gated by nanogranular SiO2 proton conducting electrolyte films are proposed to mimic such behavior. Proton-related electrochemical doping can result in evident oxygen vacancy in IZO channel layer, which is demonstrated by X-ray photoelectron spectroscopy measurements. After such electrochemical forming in half part of the IZO channel, conditioning response can be observed by gate-pulse training process

Editorial: In-memory sensing and computing: New materials and devices meet new challenges

ISSN:2673-301

Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Electronic implementation of biological synapses with essential plasticity and computing functions has been paid world-wide attentions. Here, laterally coupled indium-zinc oxide (IZO)-based synaptic transistors gated by solution-processed sodium alginate proton conducting electrolyte films are fabricated at room temperature. Synaptic behaviors and functions, including paired-pulse facilitation, high-pass filtering, and dendritic integration, are experimentally mimicked. Proton lateral migration-induced electric-double-layer electrostatic modulation is of great importance for such emulation. Such IZO-based synaptic transistors provide an interesting approach for synaptic electronics and neuromorphic systems

Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Electronic implementation of biological synapses with essential plasticity and computing functions has been paid world-wide attentions. Here, laterally coupled indium-zinc oxide (IZO)-based synaptic transistors gated by solution-processed sodium alginate proton conducting electrolyte films are fabricated at room temperature. Synaptic behaviors and functions, including paired-pulse facilitation, high-pass filtering, and dendritic integration, are experimentally mimicked. Proton lateral migration-induced electric-double-layer electrostatic modulation is of great importance for such emulation. Such IZO-based synaptic transistors provide an interesting approach for synaptic electronics and neuromorphic systems

Low-voltage protonic/electronic hybrid indium zinc oxide synaptic transistors on paper substrates

Low-voltage (1.5 V) indium zinc oxide (IZO)-based electric-double-layer (EDL) thin-film transistors (TFTs) gated by nanogranular proton conducting SiO2 electrolyte films are fabricated on paper substrates. Both enhancement-mode and depletion-mode operation are obtained by tuning the thickness of the IZO channel layer. Furthermore, such flexible IZO protonic/electronic hybrid EDL TFTs can be used as artificial synapses, and synaptic stimulation response and short-term synaptic plasticity function are demonstrated. The protonic/electronic hybrid EDL TFTs on paper substrates proposed here are promising for low-power flexible paper electronics, artificial synapses and bioelectronics