Control of Plasma Flux Composition Incident on TiN Films during reactive Magnetron Sputtering and the Effect on Film Microstructure

A hybrid plasma enhanced physical vapor deposition (PEPVD) system consisting of an unbalanced dc magnetron and a pulsed electron beam-produced plasma was used to deposit reactively sputtered titanium nitride thin films. The system allowed for control of the magnitudes of the ion and neutral flux, in addition to the type of nitrogen ions (atomic or molecular) that comprised the flux. For all deposition experiments, the magnitude of the ion flux incident on the substrate was held constant, but the composition of the total flux was varied. X-ray diffraction and atomic force microscopy showed that crystallographic texture and surface morphology of the films were affected by the plasma flux composition during growth

Etching with Electron Beam Generated Plasmas

A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride (,200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride sSiOxFyd compounds. At low incident ion energies, the Ar–SF6 mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at ,75 eV. Etch rates were independent of the 0.5%–50% duty factors studied in this work

Etching with Electron Beam Generated Plasmas

A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determined with respect to gas compositions, incident ion energy (from an applied rf bias) and plasma duty factor. For 1818 negative resist and i-line resists the removal rate increased nearly linearly with ion energy (up to 220 nm/min at 100 eV), with reasonable anisotropic pattern transfer above 50 eV. Little change in etch rate was seen as gas composition went from pure oxygen to 70% argon, implying the resist removal mechanism in this system required the additional energy supplied by the ions. With silicon substrates at room temperature, mixtures of argon and sulfur hexafluoride etched approximately seven times faster (1375 nm/min) than mixtures of oxygen and sulfur hexafluoride (,200 nm/min) with 200 eV ions, the difference is attributed to the passivation of the silicon by involatile silicon oxyfluoride sSiOxFyd compounds. At low incident ion energies, the Ar–SF6 mixtures showed a strong chemical (lateral) etch component before an ion-assisted regime, which started at ,75 eV. Etch rates were independent of the 0.5%–50% duty factors studied in this work

Multi-Line Gamma-Ray Spectrometer Performance of a Si(Li) Detector Stack

Experimental data is presented which for the first time displays multi-line spectrometer performance of a Si(Li) detector stack at elevated temperature. The stack consists of four elements, each with a 2 cm diameter active area. Ba-133 and Ag-110m spectra are obtained using various techniques to enhance the peak-to-background ratio. Spectral data are shown as a function of temperature (94 K less than or = T less than or = 230 K) using optimized peak shaping

Effect of Plasma Flux Composition on the Nitriding Rate of Stainless Steel

The total ion flux and nitriding rate for stainless steel specimens exposed to a modulated electron beam generated argon-nitrogen plasma were measured as a function of distance from the electron beam axis. The total ion flux decreased linearly with distance, but the nitriding rate increased under certain conditions, contrary to other ion flux/nitriding rate comparisons published in the literature. Variation in ion flux composition with distance was explored with a mass spectrometer and energy analyzer as a possible explanation for the anomalous nitriding rate response to ion flux magnitude. A transition in ion flux composition from mostly N2 1 to predominantly N1 ions with increasing distance was observed. Significant differences in molecular and atomic nitrogen ion energy distributions at a negatively biased electrode were also measured. An explanation for nitriding rate dependence based on flux composition and magnitude is proposed

Variable Temperature Performance of a Si(Li) Detector Stack

New experimental data is presented which displays 137Cs resolution of both single Si(Li) devices and a detector stack 2 cm in height as a function of temperature (85 K greater than or equal to T greater than or equal to 245 K). We also discuss variations in photopeak shape which indicate that detector charge collection may be temperature dependent over the range of interest

DECam integration tests on telescope simulator

The Dark Energy Survey (DES) is a next generation optical survey aimed at measuring the expansion history of the universe using four probes: weak gravitational lensing, galaxy cluster counts, baryon acoustic oscillations, and Type Ia supernovae. To perform the survey, the DES Collaboration is building the Dark Energy Camera (DECam), a 3 square degree, 570 Megapixel CCD camera which will be mounted at the Blanco 4-meter telescope at the Cerro Tololo Inter- American Observatory. DES will survey 5000 square degrees of the southern galactic cap in 5 filters (g, r, i, z, Y). DECam will be comprised of 74 250 micron thick fully depleted CCDs: 62 2k x 4k CCDs for imaging and 12 2k x 2k CCDs for guiding and focus. Construction of DECam is nearing completion. In order to verify that the camera meets technical specifications for DES and to reduce the time required to commission the instrument, we have constructed a full sized telescope simulator and performed full system testing and integration prior to shipping. To complete this comprehensive test phase we have simulated a DES observing run in which we have collected 4 nights worth of data. We report on the results of these unique tests performed for the DECam and its impact on the experiments progress.Comment: Proceedings of the 2nd International Conference on Technology and Instrumentation in Particle Physics (TIPP 2011). To appear in Physics Procedia. 8 pages, 3 figure

Context and HRM: theory, evidence, and proposals

Human resource management (HRM) has paid insufficient attention to the impact of context. In this article, we outline the need for HRM to take full account of context, particularly national context, and to use both cultural theories and, particularly, institutional theories to do that. We use research publications that utilize the Cranet data to show how that can be done. From that evidence, we develop a series of proposals for further context-based research in HRM

A Whole-Chromosome Analysis of Meiotic Recombination in Drosophila melanogaster

Although traditional genetic assays have characterized the pattern of crossing over across the genome in Drosophila melanogaster, these assays could not precisely define the location of crossovers. Even less is known about the frequency and distribution of noncrossover gene conversion events. To assess the specific number and positions of both meiotic gene conversion and crossover events, we sequenced the genomes of male progeny from females heterozygous for 93,538 X chromosomal single-nucleotide and InDel polymorphisms. From the analysis of the 30 F1 hemizygous X chromosomes, we detected 15 crossover and 5 noncrossover gene conversion events. Taking into account the nonuniform distribution of polymorphism along the chromosome arm, we estimate that most oocytes experience 1 crossover event and 1.6 gene conversion events per X chromosome pair per meiosis. An extrapolation to the entire genome would predict approximately 5 crossover events and 8.6 conversion events per meiosis. Mean gene conversion tract lengths were estimated to be 476 base pairs, yielding a per nucleotide conversion rate of 0.86 × 10−5 per meiosis. Both of these values are consistent with estimates of conversion frequency and tract length obtained from studies of rosy, the only gene for which gene conversion has been studied extensively in Drosophila. Motif-enrichment analysis revealed a GTGGAAA motif that was enriched near crossovers but not near gene conversions. The low-complexity and frequent occurrence of this motif may in part explain why, in contrast to mammalian systems, no meiotic crossover hotspots have been found in Drosophila