A hybrid metal/semiconductor electron pump for quantum metrology

Electron pumps capable of delivering a current higher than 100pA with sufficient accuracy are likely to become the direct mise en pratique of the possible new quantum definition of the ampere. Furthermore, they are essential for closing the quantum metrological triangle experiment which tests for possible corrections to the quantum relations linking e and h, the electron charge and the Planck constant, to voltage, resistance and current. We present here single-island hybrid metal/semiconductor transistor pumps which combine the simplicity and efficiency of Coulomb blockade in metals with the unsurpassed performances of silicon switches. Robust and simple pumping at 650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the calculated value, well within the 1.5e-3 uncertainty of the measurement setup. Multi-charge pumping can be performed. The simple design fully integrated in an industrial CMOS process makes it an ideal candidate for national measurement institutes to realize and share a future quantum ampere

Palladium-catalyzed reduction of a propargylic acetate derived from a sugar with SmI2. Some unexpected

4 páginas, 3 esquemas.We describe here the unexpected result that we have observed in the palladium-catalyzed reduction of the propargylic acetate 3 derived from a sugar with samarium diiodide. In addition to traces of the expected allene derived product 4, we have obtained mostly α-elimination leading to enynes 5 in moderate yield.The authors thank the DGICYT (SAF 94-0818-C02) and Comunidad Autónoma de Madrid-Consejería de Educación y Cultura- (AE-0094/94) and EU (Human Capital and Mobility; Contract no. ERBCHRXCT 92-0027) for generous financial support.Peer reviewe

NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

International audienceIn this paper we present the behavior of a single nonvolatile Flash floating gate memory cell when it is irradiated, from the backside, by femtosecond laser pulses. For the first time we show that the memory cell state can change using this type of stimulation. The measurements were carried out with an experimental setup with an ad hoc probe station built around the optical bench. We present the experimental results using different memory bias conditions to highlight the charge injection in the floating gate. Then, we study the cell degradation to check the state of the tunnel oxide and the drain-bulk junction. The aim is to understand the failure mechanisms and use this technique for accelerated reliability tests. Finally we report the experimental results achieved for different laser energies

Electromagnetic Analysis Perturbation using Chaos Generator

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Electromagnetic Analysis Perturbation using Chaos Generator

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NVM cell degradation induced by femtosecond laser backside irradiation for reliability tests

International audienceIn this paper we present the behavior of a single nonvolatile Flash floating gate memory cell when it is irradiated, from the backside, by femtosecond laser pulses. For the first time we show that the memory cell state can change using this type of stimulation. The measurements were carried out with an experimental setup with an ad hoc probe station built around the optical bench. We present the experimental results using different memory bias conditions to highlight the charge injection in the floating gate. Then, we study the cell degradation to check the state of the tunnel oxide and the drain-bulk junction. The aim is to understand the failure mechanisms and use this technique for accelerated reliability tests. Finally we report the experimental results achieved for different laser energies

Patterning Strategy for Monoelectronic Device Platform in a Complementary Metal Oxide Semiconductor Technology

International audienceWe report a patterning strategy for building the first monoelectronic device complementary metal oxide semiconductor (CMOS)-compatible platform, including a single-electron transistor (SET) and multiple coupled quantum dots. Aggressive hybrid lithography (e-beam and deep UV are combined) and plasma etching are used to form adapted silicon active areas and gates, with a minimum size of 14 nm and a pitch of 80 nm after etching. These aggressive dimensions enable the study of double dots, a key structure for the more complex quantum circuits emerging now

New design adaptated planar double gate process for performant low standby power application

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