89 research outputs found
Electron Trapping Mechanism in LaAlO₃/SrTiO₃ Heterostructures
In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. The amount of trapped electrons decays exponentially away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen that conclusion. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO_{3} and argue that such electron trapping is a universal phenomenon in SrTiO_{3}-based two-dimensional electron systems
Magnetic effects at the interface between nonmagnetic oxides
The electronic reconstruction at the interface between two insulating oxides
can give rise to a highly-conductive interface. In analogy to this remarkable
interface-induced conductivity we show how, additionally, magnetism can be
induced at the interface between the otherwise nonmagnetic insulating
perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the
interface is found, together with a logarithmic temperature dependence of the
sheet resistance. At low temperatures, the sheet resistance reveals magnetic
hysteresis. Magnetic ordering is a key issue in solid-state science and its
underlying mechanisms are still the subject of intense research. In particular,
the interplay between localized magnetic moments and the spin of itinerant
conduction electrons in a solid gives rise to intriguing many-body effects such
as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and
carrier-induced ferromagnetism in diluted magnetic semiconductors. The
conducting oxide interface now provides a versatile system to induce and
manipulate magnetic moments in otherwise nonmagnetic materials.Comment: Nature Materials, July issu
A valley-spin qubit in a carbon nanotube
Although electron spins in III-V semiconductor quantum dots have shown great
promise as qubits, a major challenge is the unavoidable hyperfine decoherence
in these materials. In group IV semiconductors, the dominant nuclear species
are spinless, allowing for qubit coherence times that have been extended up to
seconds in diamond and silicon. Carbon nanotubes are a particularly attractive
host material, because the spin-orbit interaction with the valley degree of
freedom allows for electrical manipulation of the qubit. In this work, we
realise such a qubit in a nanotube double quantum dot. The qubit is encoded in
two valley-spin states, with coherent manipulation via electrically driven spin
resonance (EDSR) mediated by a bend in the nanotube. Readout is performed by
measuring the current in Pauli blockade. Arbitrary qubit rotations are
demonstrated, and the coherence time is measured via Hahn echo. Although the
measured decoherence time is only 65 ns in our current device, this work offers
the possibility of creating a qubit for which hyperfine interaction can be
virtually eliminated
A gentle introduction to the functional renormalization group: the Kondo effect in quantum dots
The functional renormalization group provides an efficient description of the
interplay and competition of correlations on different energy scales in
interacting Fermi systems. An exact hierarchy of flow equations yields the
gradual evolution from a microscopic model Hamiltonian to the effective action
as a function of a continuously decreasing energy cutoff. Practical
implementations rely on suitable truncations of the hierarchy, which capture
nonuniversal properties at higher energy scales in addition to the universal
low-energy asymptotics. As a specific example we study transport properties
through a single-level quantum dot coupled to Fermi liquid leads. In
particular, we focus on the temperature T=0 gate voltage dependence of the
linear conductance. A comparison with exact results shows that the functional
renormalization group approach captures the broad resonance plateau as well as
the emergence of the Kondo scale. It can be easily extended to more complex
setups of quantum dots.Comment: contribution to Les Houches proceedings 2006, Springer styl
Coupling molecular spin states by photon-assisted tunneling
Artificial molecules containing just one or two electrons provide a powerful
platform for studies of orbital and spin quantum dynamics in nanoscale devices.
A well-known example of these dynamics is tunneling of electrons between two
coupled quantum dots triggered by microwave irradiation. So far, these
tunneling processes have been treated as electric dipole-allowed
spin-conserving events. Here we report that microwaves can also excite
tunneling transitions between states with different spin. In this work, the
dominant mechanism responsible for violation of spin conservation is the
spin-orbit interaction. These transitions make it possible to perform detailed
microwave spectroscopy of the molecular spin states of an artificial hydrogen
molecule and open up the possibility of realizing full quantum control of a two
spin system via microwave excitation.Comment: 13 pages, 9 figure
Nonequilibrium Singlet-Triplet Kondo Effect in Carbon Nanotubes
The Kondo-effect is a many-body phenomenon arising due to conduction
electrons scattering off a localized spin. Coherent spin-flip scattering off
such a quantum impurity correlates the conduction electrons and at low
temperature this leads to a zero-bias conductance anomaly. This has become a
common signature in bias-spectroscopy of single-electron transistors, observed
in GaAs quantum dots as well as in various single-molecule transistors. While
the zero-bias Kondo effect is well established it remains uncertain to what
extent Kondo correlations persist in non-equilibrium situations where inelastic
processes induce decoherence. Here we report on a pronounced conductance peak
observed at finite bias-voltage in a carbon nanotube quantum dot in the spin
singlet ground state. We explain this finite-bias conductance anomaly by a
nonequilibrium Kondo-effect involving excitations into a spin triplet state.
Excellent agreement between calculated and measured nonlinear conductance is
obtained, thus strongly supporting the correlated nature of this nonequilibrium
resonance.Comment: 21 pages, 5 figure
Tunable few-electron double quantum dots and Klein tunnelling in ultra-clean carbon nanotubes
Quantum dots defined in carbon nanotubes are a platform for both basic
scientific studies and research into new device applications. In particular,
they have unique properties that make them attractive for studying the coherent
properties of single electron spins. To perform such experiments it is
necessary to confine a single electron in a quantum dot with highly tunable
barriers, but disorder has until now prevented tunable nanotube-based
quantum-dot devices from reaching the single-electron regime. Here, we use
local gate voltages applied to an ultra-clean suspended nanotube to confine a
single electron in both a single quantum dot and, for the first time, in a
tunable double quantum dot. This tunability is limited by a novel type of
tunnelling that is analogous to that in the Klein paradox of relativistic
quantum mechanics.Comment: 21 pages including supplementary informatio
Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
Coupled electron spins in semiconductor double quantum dots hold promise as
the basis for solid-state qubits. To date, most experiments have used III-V
materials, in which coherence is limited by hyperfine interactions. Ge/Si
heterostructure nanowires seem ideally suited to overcome this limitation: the
predominance of spin-zero nuclei suppresses the hyperfine interaction and
chemical synthesis creates a clean and defect-free system with highly
controllable properties. Here we present a top gate-defined double quantum dot
based on Ge/Si heterostructure nanowires with fully tunable coupling between
the dots and to the leads. We also demonstrate a novel approach to charge
sensing in a one-dimensional nanostructure by capacitively coupling the double
dot to a single dot on an adjacent nanowire. The double quantum dot and
integrated charge sensor serve as an essential building block required to form
a solid-state spin qubit free of nuclear spin.Comment: Related work at http://marcuslab.harvard.edu and
http://cmliris.harvard.ed
Unexpected features of branched flow through high-mobility two-dimensional electron gases
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable
electronic states, and serve as the basis for fast transistors, research on
electrons in nanostructures, and prototypes of quantum-computing schemes. All
these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with
low-temperature mean free paths ranging from microns to hundreds of microns.
Here we study how disorder affects the spatial structure of electron transport
by imaging electron flow in three different GaAs/AlGaAs 2DEGs, whose mobilities
range over an order of magnitude. As expected, electrons flow along narrow
branches that we find remain straight over a distance roughly proportional to
the mean free path. We also observe two unanticipated phenomena in
high-mobility samples. In our highest-mobility sample we observe an almost
complete absence of sharp impurity or defect scattering, indicated by the
complete suppression of quantum coherent interference fringes. Also, branched
flow through the chaotic potential of a high-mobility sample remains stable to
significant changes to the initial conditions of injected electrons.Comment: 22 pages, 4 figures, 1 tabl
Nanoscale spin rectifiers controlled by the Stark effect
The control of orbital and spin state of single electrons is a key ingredient
for quantum information processing, novel detection schemes, and, more
generally, is of much relevance for spintronics. Coulomb and spin blockade (SB)
in double quantum dots (DQDs) enable advanced single-spin operations that would
be available even for room-temperature applications for sufficiently small
devices. To date, however, spin operations in DQDs were observed at sub-Kelvin
temperatures, a key reason being that scaling a DQD system while retaining an
independent field-effect control on the individual dots is very challenging.
Here we show that quantum-confined Stark effect allows an independent
addressing of two dots only 5 nm apart with no need for aligned nanometer-size
local gating. We thus demonstrate a scalable method to fully control a DQD
device, regardless of its physical size. In the present implementation we show
InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to
10 K. We also report and discuss an unexpected re-entrant SB lifting as a
function magnetic-field intensity
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