Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: experiment and theory

High quality ZnO crystals with the sharp band-edge excitonic emission and very weak green emission were implanted by nitrogen ions. An additional red emission band was observed in the as-implanted ZnO crystal and investigated as a function of temperature. By employing the underdamped multimode Brownian oscillator model for the general electron-phonon coupling system, both the original green and nitrogen-implantation induced red emission bands were theoretically reproduced at different temperatures. Excellent agreement between the theory and the experiment enables us determine the energetic positions of the pure electronic levels associated with the green and red emission bands, respectively. The determined energy level of the red emission band is in good agreement with the data obtained from the deep-level transient spectroscopy measurements. © 2012 American Institute of Physics.published_or_final_versio

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

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Zn-vacancy related defects in ZnO grown by pulsed laser deposition

Undoped and Ga-doped ZnO (002) films were grown c-sapphire using the pulsed laser deposition (PLD) method. Znvacancy related defects in the films were studied by different positron annihilation spectroscopy (PAS). These included Doppler broadening spectroscopy (DBS) employing a continuous monenergetic positron beam, and positron lifetime spectroscopy using a pulsed monoenergetic positron beam attached to an electron linear accelerator. Two kinds of Znvacancy related defects namely a monovacancy and a divacancy were identified in the films. In as-grown undoped samples grown with relatively low oxygen pressure P(O2)≤1.3 Pa, monovacancy is the dominant Zn-vacancy related defect. Annealing these samples at 900 oC induced Zn out-diffusion into the substrate and converted the monovacancy to divacancy. For the undoped samples grown with high P(O2)=5 Pa irrespective of the annealing temperature and the as-grown degenerate Ga-doped sample (n=1020 cm-3), divacancy is the dominant Zn-vacancy related defect. The clustering of vacancy will be discussed.published_or_final_versio

Deep-level defects in n-type 6H silicon carbide induced by He implantation

Defects in He-implanted n -type 6H-SiC samples have been studied with deep-level transient spectroscopy. A deep-level defect was identified by an intensity with a logarithmical dependence on the filling pulse width, which is characteristic of dislocation defects. Combined with information extracted from positron-annihilation spectroscopic measurements, this defect was associated with the defect vacancy bound to a dislocation. Defect levels at 0.380.44 eV (E1 E2), 0.50, 0.53, and 0.640.75 eV (Z1 Z2) were also induced by He implantation. Annealing studies on these samples were also performed and the results were compared with those obtained from e- -irradiated (0.3 and 1.7 MeV) and neutron-irradiated n -type 6H-SiC samples. The E1 E2 and the Z1 Z2 signals found in the He-implanted sample are more thermally stable than those found in the electron-irradiated or the neutron-irradiated samples. © 2005 American Institute of Physics.published_or_final_versio

The Zn-vacancy Related Green Luminescence and Donor–acceptor Pair Emission in ZnO Grown By Pulsed Laser Deposition

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Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide

Deep level defects E1 E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n -type 6H-SiC. Similar to others' results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E1 E2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E1 E2. The activation energy and the capture cross section of this defect are EC -0.31 eV and σ∼8× 10-14 cm2, respectively. © 2005 American Institute of Physics.published_or_final_versio

Deep level transient spectroscopic study of oxygen implanted melt grown ZnO single crystal

Deep level traps in melt grown ZnO single crystal created by oxygen implantation and subsequent annealing in air were studied by deep level transient spectroscopy measurement between 80 and 300 K. The E C-0.29 eV trap (E3) was the dominant peak in the as-grown sample and no new defects were created in the as-O-implanted sample. The single peak feature of the deep level transient spectroscopy (DLTS) spectra did not change with the annealing temperature up to 750 °C, but the activation energy decreased to 0.22 eV. This was explained in terms of a thermally induced defect having a peak close to but inseparable from the original 0.29 eV peak. A systematic study on a wide range of the rate window for the DLTS measurement successfully separated the Arrhenius plot data originated from different traps. It was inferred that the E3 concentration in the samples did not change after the O-implantation. The traps at E C-0.11, E C-0.16 and E C-0.58 eV were created after annealing. The E C-0.16 eV trap was assigned to an intrinsic defect. No DLTS signal was found after the sample was annealed to 1200 °C. © 2011 IOP Publishing Ltd.postprin

Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition

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Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation

6H-SiC samples subjected to He-implantation and e--irradiation (Ee=0.2MeV-1.7MeV) were investigated by deep level transient spectroscopy (DLTS). E1/E2 were identified in the He-implanted and the e--irradiated samples with Ee≥0. 3MeV. Considering the minimum e- energy required to displace the atoms in the lattice, the E1/E2 creation was related to the C-atom displacement. Similar to previous reports, the peak intensity and the capture cross sections of E1/E2 anomalously varies from samples to samples. It was shown that these anomalies were due to the presence of a DLTS peak overlapping with the E1/E2 signals. © 2005 American Institute of Physics.published_or_final_versio