Fermi volume evolution and crystal field excitations in heavy-fermion compounds probed by time-domain terahertz spectroscopy

We measure the quasiparticle weight in the heavy-fermion compound CeCu$_{6-x}$Au$_{x}$ ($x=0,\ 0.1$) by time-resolved THz spectroscopy for temperatures from 2 up to 300\,K. This method distinguishes contributions from the heavy Kondo band and from the crystal-electric-field satellite bands by different THz response delay times. We find that the formation of heavy bands is controlled by an exponentially enhanced, high-energy Kondo scale once the crystal-electric-field states become thermally occupied. We corroborate these observations by temperature-dependent dynamical mean-field calculations for the multi-orbital Anderson lattice model and discuss consequences for quantum critical scenarios.Comment: Published version, 6 pages (including references), 5 figures, Supplemental Material (2 pages) adde

Anomalous Hall effect in the noncollinear antiferromagnet Mn5Si3

Metallic antiferromagnets with noncollinear orientation of magnetic moments provide a playground for investigating spin-dependent transport properties by analysis of the anomalous Hall effect. The intermetallic compound Mn5Si3 is an intinerant antiferromagnet with collinear and noncollinear magnetic structures due to Mn atoms on two inequivalent lattice sites. Here, magnetotransport measurements on polycrstalline thin films and a single crystal are reported. In all samples, an additional contribution to the anomalous Hall effect attributed to the noncollinear arrangment of magnetic moments is observed. Furthermore, an additional magnetic phase between the noncollinear and collinear regimes above a metamagnetic transition is resolved in the single crystal by the anomalous Hall effect

Electronic disorder of P- and B-doped Si at the metal-insulator transition investigated by scanning tunnelling microscopy and electronic transport

The (111)-2 × 1 surface of in situ cleaved heavily P- or B-doped Si is investigated by scanning tunnelling microscopy and spectroscopy at room temperature and at low temperature. P atoms have been identified on different sites of the Si(111)-2 × 1 surface by their characteristic voltage-dependent contrast for positive as well as negative buckling of the π-bonded chains. The distributions of dopants per surface area and of nearest-neighbour distances are found to be in agreement with a random arrangement of dopants in Si up to doping levels well above the metal–insulator transition. In addition, P atoms have been identified by their depth-dependent contrast down to the third layer beneath the surface with a volume density in agreement with the bulk doping density. The random electronic disorder supports the view of an Anderson transition driven by disorder close to the critical concentration or critical uniaxial stress

Tuning Anti-Klein to Klein Tunneling in Bilayer Graphene

We show that in gapped bilayer graphene, quasiparticle tunneling and the corresponding Berry phase can be controlled such that they exhibit features of single-layer graphene such as Klein tunneling. The Berry phase is detected by a high-quality Fabry-Pérot interferometer based on bilayer graphene. By raising the Fermi energy of the charge carriers, we find that the Berry phase can be continuously tuned from 2π down to 0.68π in gapped bilayer graphene, in contrast to the constant Berry phase of 2π in pristine bilayer graphene. Particularly, we observe a Berry phase of π, the standard value for single-layer graphene. As the Berry phase decreases, the corresponding transmission probability of charge carriers at normal incidence clearly demonstrates a transition from anti-Klein tunneling to nearly perfect Klein tunneling

Switching of a large anomalous Hall effect between metamagnetic phases of a non-collinear antiferromagnet

The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to their low uniform magnetization. However, recent experiments and theory have demonstrated that certain antiferromagnets with a non-collinear arrangement of magnetic moments exhibit a sizeable spontaneous AHE at zero field due to a non-vanishing Berry curvature arising from the quantum mechanical phase of the electron’s wave functions. Here we show that antiferromagnetic Mn5Si3 single crystals exibit a large AHE which is strongly anisotropic and shows multiple transitions with sign changes at different magnetic fields due to field-induced rearrangements of the magnetic structure despite only tiny variations of the total magnetization. The presence of multiple non-collinear magnetic phases offers the unique possiblity to explore the details of the AHE and the sensitivity of the Hall effect on the details of the magnetic texture

Switching of a large anomalous Hall effect between metamagnetic phases of a non-collinear antiferromagnet

The anomalous Hall effect (AHE), which in long-range ordered ferromagnets appears as a voltage transverse to the current and usually is proportional to the magnetization, often is believed to be of negligible size in antiferromagnets due to their low uniform magnetization. However, recent experiments and theory have demonstrated that certain antiferromagnets with a non-collinear arrangement of magnetic moments exhibit a sizeable spontaneous AHE at zero field due to a non-vanishing Berry curvature arising from the quantum mechanical phase of the electron’s wave functions. Here we show that antiferromagnetic Mn5Si3 single crystals exibit a large AHE which is strongly anisotropic and shows multiple transitions with sign changes at different magnetic fields due to field-induced rearrangements of the magnetic structure despite only tiny variations of the total magnetization. The presence of multiple non-collinear magnetic phases offers the unique possiblity to explore the details of the AHE and the sensitivity of the Hall effect on the details of the magnetic texture

Tailoring supercurrent confinement in graphene bilayer weak links

The Josephson effect is one of the most studied macroscopic quantum phenomena in condensed matter physics and has been an essential part of the quantum technologies development over the last decades. It is already used in many applications such as magnetometry, metrology, quantum computing, detectors or electronic refrigeration. However, developing devices in which the induced superconductivity can be monitored, both spatially and in its magnitude, remains a serious challenge. In this work, we have used local gates to control confinement, amplitude and density profile of the supercurrent induced in one-dimensional nanoscale constrictions, defined in bilayer graphene-hexagonal boron nitride van der Waals heterostructures. The combination of resistance gate maps, out-of-equilibrium transport, magnetic interferometry measurements, analytical and numerical modelling enables us to explore highly tunable superconducting weak links. Our study opens the path way to design more complex superconducting circuits based on this principle such as electronic interferometers or transition-edge sensors

Tailoring supercurrent confinement in graphene bilayer weak links

The Josephson effect is one of the most studied macroscopic quantum phenomena in condensed matter physics and has been an essential part of the quantum technologies development over the last decades. It is already used in many applications such as magnetometry, metrology, quantum computing, detectors or electronic refrigeration. However, developing devices in which the induced superconductivity can be monitored, both spatially and in its magnitude, remains a serious challenge. In this work, we have used local gates to control confinement, amplitude and density profile of the supercurrent induced in one-dimensional nanoscale constrictions, defined in bilayer graphene-hexagonal boron nitride van der Waals heterostructures. The combination of resistance gate maps, out-of-equilibrium transport, magnetic interferometry measurements, analytical and numerical modelling enables us to explore highly tunable superconducting weak links. Our study opens the path way to design more complex superconducting circuits based on this principle, such as electronic interferometers or transition-edge sensors