Application of Local Transverse Field for Domain Wall Control in Ferromagnetic Nanowire Arrays

In ferromagnetic nanowire arrays, where each wire contains multiple domain walls, it will be necessary to select an individual domain wall (DW) to move. In the field driven DW case, the field is typically applied globally affecting all of the domain walls in the system. We present micromagnetic simulation results demonstrating selectivity and control of an individual DW in such an array of nanowires using a combination of global and locally generated magnetic fields. Arranging the orientation of the local field allows for selectivity of a specific DW and its controllable movement to a new location

Selection and Control of Individual Domain Walls in Nanowire Arrays via Asymmetric Depinning Fields

Artificially inscribed notches are often used to pin domain walls (DWs) in ferromagnetic nanowires. The process of selecting and moving the trapped DW in nanowire arrays is an important step for potential applications. The chirality of a DW leads to a pair of pinning positions at the inscribed notches, which can be modeled by a symmetric double well. The depinning field depends on the side of the well, the DW is trapped with respect to the applied field direction, and the DWs can also be transitioned between the two wells without depinning. We demonstrate how manipulating the double well improves the DW selectivity and control in wire arrays containing multiple DWs