CdTe Thin Films: Deposition Techniques and Applications

The II-IV semiconductor compound, CdTe, has suitable electrical and optical properties as photovoltaic and high-energy radiation sensor material. As an absorber material for thin-film-based solar cells, CdTe holds the potentiality to fabricate high-efficiency solar cells by means of low-cost technologies. This chapter presents a comprehensive review on the CdTe thin-film deposition techniques as well as on the several configurations for the solar cell structures that have led the best efficiency conversion. Current CdTe thin-film deposition techniques include sputtering, close spaced vapor transport (CSVT), chemical spray pyrolysis, and electrodeposition. These techniques have easily been adapted to deposit polycrystalline CdTe films on various flexible and rigid substrates. In regard to the device structure configuration, a variety of partner materials (transparent contact, optical window, buffer layer) were tested, and CdTe film thickness was varied to develop opaque and semitransparent devices by some techniques mentioned above. In this chapter, we will discuss about each technique used for CdTe thin-film deposition as well as its advantages and disadvantages

Solution-based synthesis of kesterite thin film semiconductors

Large-scale deployment of photovoltaic modules is required to power our renewable energy future. Kesterite, Cu2ZnSn(S, Se)4, is a p-type semiconductor absorber layer with a tunable bandgap consisting of earth abundant elements, and is seen as a potential 'drop-in' replacement to Cu(In,Ga)Se2 in thin film solar cells. Currently, the record light-to-electrical power conversion efficiency (PCE) of kesterite-based devices is 12.6%, for which the absorber layer has been solution-processed. This efficiency must be increased if kesterite technology is to help power the future. Therefore two questions arise: what is the best way to synthesize the film? And how to improve the device efficiency? Here, we focus on the first question from a solution-based synthesis perspective. The main strategy is to mix all the elements together initially and coat them on a surface, followed by annealing in a reactive chalcogen atmosphere to react, grow grains and sinter the film. The main difference between the methods presented here is how easily the solvent, ligands, and anions are removed. Impurities impair the ability to achieve high performance (>∼10% PCE) in kesterite devices. Hydrazine routes offer the least impurities, but have environmental and safety concerns associated with hydrazine. Aprotic and protic based molecular inks are environmentally friendlier and less toxic, but they require the removal of organic and halogen species associated with the solvent and precursors, which is challenging but possible. Nanoparticle routes consisting of kesterite (or binary chalcogenides) particles require the removal of stabilizing ligands from their surfaces. Electrodeposited layers contain few impurities but are sometimes difficult to make compositionally uniform over large areas, and for metal deposited layers, they have to go through several solid-state reaction steps to form kesterite. Hence, each method has distinct advantages and disadvantages. We review the state-of-the art of each and provide perspective on the different strategies.Fil: Todorov, I. T.. IBM Research. Thomas J. Watson Research Center; Estados UnidosFil: Hillhouse, H. W.. University of Washington; Estados UnidosFil: Aazou, S.. Mohammed V University; MarruecosFil: Sekkat, Z.. Mohammed V University; MarruecosFil: Vigil Galán, O.. National Polytechnic Institute; MéxicoFil: Deshmukh, S. D.. Purdue University; Estados UnidosFil: Agrawal, R.. Purdue University; Estados UnidosFil: Bourdais, S.. No especifíca;Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Arnou, P.. University Of Luxembourg; LuxemburgoFil: Mitzi, D.B.. University of Duke; Estados UnidosFil: Dale, P.. University Of Luxembourg; Luxemburg

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Reflexive Spaces and Numerical Radius Attaining Operators

In this note we deal with a version of James' Theorem for numerical radius, which was already considered in [4]. First of all, let us recall that this well known classical result states that a Banach space satisfying that all the (bounded and linear) functionals attain the norm, has to be reflexive [16]

Cross-Section Analysis of the Composition of Sprayed Cu 2 ZnSnS 4 Thin Films by XPS, EDS, and Multi-Wavelength Raman Spectroscopy

A detailed cross-section analysis of the chemical composition of sprayed Cu 2 ZnSnS 4 thin films is presented. X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy (with near-IR, visible, and UV-lasers) are used to demonstrate that while CZTS effectively forms within the bulk of the film, there is some degree of element segregation, formation of undesirable secondary phases, and the presence of a disordered kesterite structure across the film. Different penetration depths of the excitation signals correspond to the many different surface sensitive techniques employed in this work. XPS results reveal that the surface of Cu 4 ZnSnS 4 (CZTS) films presents a high concentration of tin and zinc and a low sulfur concentration, while being highly depleted in copper. EDS, XRD, and infrared Raman spectroscopy confirm that the composition of as-sprayed and sulfurized films is close to stoichiometric Cu 2 ZnSnS 4 . Resonant UV-Raman spectroscopy helps to identify secondary phases located at the external surface of sprayed and sulfurized CZTS films (mainly ZnS, ZnO), while VIS-Raman spectroscopy helps to identify a disordered kesterite structure close to the surface. Secondary phases need to be chemically etched when aiming at incorporating kesterite films obtained by spray pyrolysis into photovoltaic devices.Fil: Valdes, Matias Hernan. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; ArgentinaFil: Pascual Winter, María Florencia. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Bruchhausen, Axel Emerico. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Schreiner, Wido H.. Universidade Federal do Paraná; BrasilFil: Vazquez, Marcela Vivian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Mar del Plata. Instituto de Investigaciones en Ciencia y Tecnología de Materiales. Universidad Nacional de Mar del Plata. Facultad de Ingeniería. Instituto de Investigaciones en Ciencia y Tecnología de Materiales; Argentin