Double heterostructure lasers with facets formed by a hybrid wet and reactive-ion-etching technique

Double heterostructure lasers were fabricated in which one of the laser facets was produced by a hybrid wet and reactive-ion-etching technique. This technique is suitable for GaAs/GaAlAs heterostructure lasers and utilizes the selectivity of the plasma in preferentially etching GaAs over GaAlAs. Lasers fabricated by this technique are compatible with optoelectronic integration and have threshold currents and quantum efficiency comparable to lasers with both mirrors formed by cleaving. The technique enables the use of relatively higher pressures of noncorrosive gases in the etch plasma resulting in smoother mirror surfaces and further eliminates the nonreproducibility inherent in the etching of GaAlAs layers

Magnetoresistance in the superconducting state at the (111) LaAlO3_3/SrTiO3_3 interface

Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is in the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state, and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity.Comment: 6 Pages 4 figure

Electric Field Effect in Diluted Magnetic Insulator Anatase Co:TiO2

An external electric field induced reversible modulation of room temperature magnetic moment is achieved in an epitaxial and insulating thin film of dilutely cobalt-doped anatase TiO2. This first demonstration of electric field effect in any oxide based diluted ferromagnet is realized in a high quality epitaxial heterostructure of PbZr0.2Ti0.8O3/Co:TiO2/SrRuO3 grown on (001) LaAlO3. The observed effect, which is about 15% in strength in a given heterostructure, can be modulated over several cycles. Possible mechanisms for electric field induced modulation of insulating ferromagnetism are discussed.Comment: 14 pages, 4 figure

Superconductivity and Frozen Electronic States at the (111) LaAlO3_3/SrTiO3_3 Interface

In spite of Anderson's theorem, disorder is known to affect superconductivity in conventional s-wave superconductors. In most superconductors, the degree of disorder is fixed during sample preparation. Here we report measurements of the superconducting properties of the two-dimensional gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) in the (111) crystal orientation, a system that permits \emph{in situ} tuning of carrier density and disorder by means of a back gate voltage $V_g$. Like the (001) oriented LAO/STO interface, superconductivity at the (111) LAO/STO interface can be tuned by $V_g$. In contrast to the (001) interface, superconductivity in these (111) samples is anisotropic, being different along different interface crystal directions, consistent with the strong anisotropy already observed other transport properties at the (111) LAO/STO interface. In addition, we find that the (111) interface samples "remember" the backgate voltage $V_F$ at which they are cooled at temperatures near the superconducting transition temperature $T_c$, even if $V_g$ is subsequently changed at lower temperatures. The low energy scale and other characteristics of this memory effect ($<1$ K) distinguish it from charge-trapping effects previously observed in (001) interface samples.Comment: 6 pages, 5 Figure

METABOLIC SYNDROME IN MADHUMEGAM (TYPE 2 DIABETES MELLITUS) PATIENTS REPORTING AT NATIONAL INSTITUTE OF SIDDHA – A CROSS SECTIONAL STUDY

Introduction: Madhumegam is a clinical condition characterised by frequent and excessive urination which ultimately leads to deterioration of seven body constituents and three humours. Its signs and symptoms may be correlated with Diabetes mellitus in modern science. Since, metabolic syndrome has become major cause of morbidity and mortality, identifying its cause and prevention has gained immense importance. Aim: This study aimed at determining the prevalence of metabolic syndrome in Madhumegam (Type 2 Diabetes mellitus) patients and to identify the most critical predictive risk factors of metabolic syndrome. Methods: This hospital based cross sectional study involved 100 type 2 diabetes mellitus patients and was conducted at Ayothidoss Pandithar Hospital, National Institute of Siddha. This study used questionnaire to obtain information on diabetic condition, anthropometric measurements and lipid profile. Metabolic syndrome was defined according to the International Diabetes Federation criteria. Results: The prevalence of metabolic syndrome was 53% in the study population. Elevated triglyceride was the commonest component (77.3%) followed by lowered HDL (51%). Female type 2 diabetic patients had a higher prevalence of metabolic syndrome (54.7%) than their male counterparts (45.3%). With respect to age, individual within the age group of 60-69 had highest prevalence of metabolic syndrome while age group of 30-39 has least prevalence of metabolic syndrome. Conclusion: Elevated triglyceride for men and lowered HDL for women were the strongest risk factors. Metabolic syndrome is a significant health problem and its preventive strategies should focus on early diagnoses and lifestyle modification

Temperature dependent optical studies of Ti1−x_{1-x}Cox_xO2_2

We present the results of Raman and photoluminescence (PL) studies on epitaxial anatase phase Ti$_{1-x}$Co$_x$O$_2$ films for $x$ = 0-0.07, grown by pulsed laser deposition. The low doped system ($x$=0.01 and 0.02) shows a Curie temperature of ~700 K in the as-grown state. The Raman spectra from the doped and undoped films confirm their anatase phase. The photoluminescence spectrum is characterized by a broad emission from self-trapped excitons (STE) at 2.3 eV at temperatures below 120 K. This peak is characteristic of the anatase-phase TiO$_2$ and shows a small blueshift with increasing doping concentration. In addition to the emission from STE, the Co-doped samples show two emission lines at 2.77 eV and 2.94 eV that are absent in the undoped film indicative of a spin-flip energy.Comment: 8 pages, 4 figure

Standardization of the method for estimation of ethambutol in pharmaceutical preparations and biological fluid

A simple column chromatographic method for determination of ethambutol (EMB) in pharmaceutical preparations containing EMB in combination with other anti-TB drugs is presented. The method involved extraction of EMB into an organic solvent. followed by basification and column chromatographic separation on Amberlite CG 50 (100-200 mesh) and elution with suitable eluants and estimation at a wavelength of 270 nm. The assay was linear from 25 to 400 μg/ml. The relative standard deviations of intra and inter day assays were lower than 5%. Ethambutol was recovered from human urine quantitatively and stable for a period of atleast one week in urine stored at-20°C

Interface characterization of all-perovskite oxide field effect heterostructures

All-oxide devices consisting of Niobium-doped Strontium Titanate (Nb:STO)/Strontium Titanate (STO)/Lanthanum Strontium Cuprous Oxide (LSCO) heterostructures were fabricated and characterized electrically for their interface properties through capacitance-voltage (C-V) and current-voltage (I-V) techniques, in the context of electric field effect studies. The C-V studies establish the occurrence of charge modulation in the LSCO channel. Absence of hysteresis in the C-V characteristic when the voltage is retraced suggests the absence of mobile ions in the gate oxide and slow interface traps. This is further corroborated by the absence of drift in the C-V characteristic and shift in the flat band voltage (V FB) when the device is subjected to temperature-bias aging. The interface state density obtained from V FB is ~1012/cm2. The uncompensated hole concentration in the LSCO channel calculated from the measured room temperature C-V data is ~1020/cm3 and is in good agreement with the expected hole concentration in LSCO. Current-time and current-voltage plots are invariant with respect to the polarity of the applied voltage up to ~5 V. This, in a structure with asymmetric interfaces, indicates that the electrical contacts to STO are non-blocking and the conduction through STO is bulk-limited in this voltage regime. Thickness dependent current and capacitance studies also corroborate the bulk-limited nature of conduction through the device in this voltage regime. However, I-V characteristic shows a rectifying nature beyond ~8 V indicating that the mechanism in this voltage regime could be interface limited