Modeling of ion-implanted atoms diffusion during the epitaxial growth of the layer

The equation of impurity diffusion due to formation, migration, and dissolution of the pairs "impurity atom - intrinsic point defect" taking into account the nonuniform distributions of nonequilibrium point defects and drift of the pairs in the field of elastic stresses is presented in the coordinate system associated with the moving surface of the growing epitaxial layer. The analytical solution of this equation for the low fluence ion implantation has been obtained.Comment: 3 pages, 2 figure

Effect of dietary fat on the activity of palmitic acid elongase in the blood serum and liver of rats

To determine the effect of dietary fats on the activity of palmitic acid elongase by two methods, using indicators of the fatty acid composition of lipids in the blood serum and liver of rats. Methods.Edible vegetable oils were used: high linoleic (HLSO) and high oleic (HOSO) sunflower oils, palm oil(PO). Fats were introduced into the fat-free diet (FFD) in the amount of 5% instead of the same amount of starch.The animals were fed for 30 days. A fraction of neutral lipids (triglycerides + cholesterol esters) was isolated from blood serum and liver, and the fatty acid composition was determined in it by gas chromatography.Results.HLSO consumption reduced the biosynthesis of energy fatty acids (C16:0, C16:1, C18:0 and C18:1) in the neutral fraction of serum and liver lipids. A new method for assessing the level of palmitic acid elongase, taking into account the metabolism of palmitic and stearic acids, is proposed, which gives higher values than the commonly used method for assessing elongase. With the help of the new method, elongase activation when HOSO is consumedwas determined. Conclusions.A new method is proposed for the determination of palmitic acid elongase, which takes into account the metabolism of fatty acids. It has been established that the consumption ofHLSO reduces the biosynthesis of energy fatty acids. Consumption of HOSO increases elongase activity

Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics