Spin-dependent Rabi oscillations in single quantum=0D dot

Ultrafast optical pump of exciton resonance in single quantum dot by an elliptically polarized laser pulse is described by the non-Markov balance equations. Population and spin dynamics are investigated and spin-dependent Rabi oscillations are considered for the case of a flat quantum dot, with the lateral size greater than the height. The following peculiarities of temporal evolution have been found: a) a beating of Rabi oscillations under an elliptically polarized pump and b) quenching of spin orientation due to a spin-orbit splitting effect.Comment: 4 pages, 3 figure

Saturation of interband absorption in graphene

The transient response of an intrinsic graphene, which is caused by the ultrafast interband transitions, is studied theoretically for the range of pumping correspondent to the saturated absorption regime. Spectral and temporal dependencies of the photoexcited concentration as well as the transmission and relitive absotption coefficients are considered for mid-IR and visible (or near-IR) spectral regions at different durations of pulse and broadening energies. The characteristic intencities of saturation are calculated and the results are compared with the experimental data measured for the near-IR lasers with a saturable absorber. The negative absorption of a probe radiation during cascade emission of optical phonons is obtained.Comment: 7 pages, 7 figure

KP-approach for non-symmetric short-range defects: resonant states and alloy bandstructure

The short-range defect with reduced symmetry is studied in the framework of KP-approach taking into account a matrix structure of potential energy in the equations for envelope functions. The case of the narrow-gap semiconductor, with defects which are non-symmetric along the [001], [110], or [111] directions, is considered. Resonant state at a single defect is analyzed within the Koster-Slater approximation. The bandstructure modification of the alloy, formed by non-symmetric impurities, is discussed and a generalized virtual crystal approximation is introduced.Comment: Extended version, 9 pages, 6 figures (EPS

Transient response under ultrafast interband excitation of an intrinsic graphene

The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon scattering and the interband generation-recombination transitions due to thermal radiation are analyzed. The distributions of carriers are obtained for the limiting cases when carrier-carrier scattering is negligible and when the intercarrier scattering imposes the quasiequilibrium distribution. The transient optical response (differential reflectivity and transmissivity) on a probe radiation and transient photoconductivity (response on a weak dc field) appears to be strongly dependent on the relaxation and recombination dynamics of carriers.Comment: 9 pages, 8 figure

Coherent oscillations of electrons in tunnel-coupled wells under ultrafast intersubband excitation

Ultrafast intersubband excitation of electrons in tunnell-coupled wells is studied depending on the structure parameters, the duration of the infrared pump and the detuning frequency. The temporal dependencies of the photoinduced concentration and dipole moment are obtained for two cases of transitions: from the single ground state to the tunnel-coupled excited states and from the tunnel-coupled states to the single excited state. The peculiarities of dephasing and population relaxation processes are also taken into account. The nonlinear regime of the response is also considered when the splitting energy between the tunnel-coupled levels is renormalized by the photoexcited electron concentration. The dependencies of the period and the amplitude of oscillations on the excitation pulse are presented with a description of the nonlinear oscillations damping.Comment: 8 pages, 12 figure