4,818 research outputs found
Amendment of Heuts-Selen's lotsizing and sequencing heuristic for single stage process manufacturing systems
Productivity;Production Scheduling;Manufacturing;production
Adaptive false memory: Imagining future scenarios increases false memories in the DRM paradigm
Previous research has shown that rating words for their relevance to a future scenario enhances memory for those words. The current study investigated the effect of future thinking on false memory using the Deese/Roediger–McDermott (DRM) procedure. In Experiment 1, participants rated words from 6 DRM lists for relevance to a past or future event (with or without planning) or in terms of pleasantness. In a surprise recall test, levels of correct recall did not vary between the rating tasks, but the future rating conditions led to significantly higher levels of false recall than the past and pleasantness conditions did. Experiment 2 found that future rating led to higher levels of false recognition than did past and pleasantness ratings but did not affect correct recognition. The effect in false recognition was, however, eliminated when DRM items were presented in random order. Participants in Experiment 3 were presented with both DRM lists and lists of unrelated words. Future rating increased levels of false recognition for DRM lures but did not affect correct recognition for DRM or unrelated lists. The findings are discussed in terms of the view that false memories can be associated with adaptive memory functions
Amendment of Heuts-Selen's lotsizing and sequencing heuristic for single stage process manufacturing systems
Large tunable image-charge effects in single-molecule junctions
The characteristics of molecular electronic devices are critically determined
by metal-organic interfaces, which influence the arrangement of the orbital
levels that participate in charge transport. Studies on self-assembled
monolayers (SAMs) show (molecule-dependent) level shifts as well as
transport-gap renormalization, suggesting that polarization effects in the
metal substrate play a key role in the level alignment with respect to the
metal's Fermi energy. Here, we provide direct evidence for an electrode-induced
gap renormalization in single-molecule junctions. We study charge transport in
single porphyrin-type molecules using electrically gateable break junctions. In
this set-up, the position of the occupied and unoccupied levels can be followed
in situ and with simultaneous mechanical control. When increasing the electrode
separation, we observe a substantial increase in the transport gap with level
shifts as high as several hundreds of meV for displacements of a few \aa
ngstroms. Analysis of this large and tunable gap renormalization with
image-charge calculations based on atomic charges obtained from density
functional theory confirms and clarifies the dominant role of image-charge
effects in single-molecule junctions
Study of a high spatial resolution 10B-based thermal neutron detector for application in neutron reflectometry: the Multi-Blade prototype
Although for large area detectors it is crucial to find an alternative to
detect thermal neutrons because of the 3He shortage, this is not the case for
small area detectors. Neutron scattering science is still growing its
instruments' power and the neutron flux a detector must tolerate is increasing.
For small area detectors the main effort is to expand the detectors'
performances. At Institut Laue-Langevin (ILL) we developed the Multi-Blade
detector which wants to increase the spatial resolution of 3He-based detectors
for high flux applications. We developed a high spatial resolution prototype
suitable for neutron reflectometry instruments. It exploits solid 10B-films
employed in a proportional gas chamber. Two prototypes have been constructed at
ILL and the results obtained on our monochromatic test beam line are presented
here
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