1,163 research outputs found
Nuclear magnetic resonance spectrum of 31P donors in silicon quantum computer
The influence of the electric field created by a gate potential of the
silicon quantum computer on the hyperfine interaction constant (HIC) is
obtained. The errors due to technological inaccuracy of location of donor atoms
under a gate are evaluated. The energy spectra of electron-nuclear spin system
of two interacting donor atoms with various values of HIC are calculated. The
presence of two pairs of anticrossing levels in the ground electronic state is
shown. Parameters of the structure at which errors rate can be greatly
minimized are found.Comment: 12 pages,, 3 figure
Charge qubit entanglement via conditional single-electron transfer in an array of quantum dots
We propose a novel scheme to generate entanglement among quantum-dot-based
charge qubits via sequential electron transfer in an auxiliary quantum dot
structure whose transport properties are conditioned by qubit states. The
transfer protocol requires the utilization of resonant optical pulses combined
with an appropriate voltage gate pattern. As an example illustrating the
application of this scheme, we examine the nine-qubit Shor code state
preparation together with the error syndrome measurement
Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three
monolayer thick AlAs central barrier have been investigated for different well
widths and Si doping levels. The transport parameters are determined by
resistivity measurements in the temperature range 4-300 K and magnetotransport
in magnetic fields up to 12 T. The (subband) carrier concentrations and
mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations.
We find that the transport parameters are strongly affected by the insertion of
the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an
increase of the transition energies upon insertion of the barrier. The
transport and optical data are analyzed with help of self-consistent
calculations of the subband structure and envelope wave functions. Insertion of
the AlAs central barrier changes the spatial distribution of the electron wave
functions and leads to the formation of hybrid states, i.e. states which extend
over the InGaAs and the delta-doped layer quantum wells.Comment: 14 pages, pdf fil
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