145 research outputs found

    Analytical solution of generalized Burton--Cabrera--Frank equations for growth and post--growth equilibration on vicinal surfaces

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    We investigate growth on vicinal surfaces by molecular beam epitaxy making use of a generalized Burton--Cabrera--Frank model. Our primary aim is to propose and implement a novel analytical program based on a perturbative solution of the non--linear equations describing the coupled adatom and dimer kinetics. These equations are considered as originating from a fully microscopic description that allows the step boundary conditions to be directly formulated in terms of the sticking coefficients at each step. As an example, we study the importance of diffusion barriers for adatoms hopping down descending steps (Schwoebel effect) during growth and post-growth equilibration of the surface.Comment: 16 pages, REVTeX 3.0, IC-DDV-94-00

    Mounding Instability and Incoherent Surface Kinetics

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    Mounding instability in a conserved growth from vapor is analysed within the framework of adatom kinetics on the growing surface. The analysis shows that depending on the local structure on the surface, kinetics of adatoms may vary, leading to disjoint regions in the sense of a continuum description. This is manifested particularly under the conditions of instability. Mounds grow on these disjoint regions and their lateral growth is governed by the flux of adatoms hopping across the steps in the downward direction. Asymptotically ln(t) dependence is expected in 1+1- dimensions. Simulation results confirm the prediction. Growth in 2+1- dimensions is also discussed.Comment: 4 pages, 4 figure

    Current-Induced Step Bending Instability on Vicinal Surfaces

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    We model an apparent instability seen in recent experiments on current induced step bunching on Si(111) surfaces using a generalized 2D BCF model, where adatoms have a diffusion bias parallel to the step edges and there is an attachment barrier at the step edge. We find a new linear instability with novel step patterns. Monte Carlo simulations on a solid-on-solid model are used to study the instability beyond the linear regime.Comment: 4 pages, 4 figure

    The effect of monomer evaporation on a simple model of submonolayer growth

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    We present a model for thin film growth by particle deposition that takes into account the possible evaporation of the particles deposited on the surface. Our model focuses on the formation of two-dimensional structures. We find that the presence of evaporation can dramatically affect the growth kinetics of the film, and can give rise to regimes characterized by different ``growth'' exponents and island size distributions. Our results are obtained by extensive computer simulations as well as through a simple scaling approach and the analysis of rate equations describing the system. We carefully discuss the relationship of our model with previous studies by Venables and Stoyanov of the same physical situation, and we show that our analysis is more general.Comment: 41 pages including figures, Revtex, to be published in Physical Review

    A quantitative theory of current-induced step bunching on Si(111)

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    We use a one-dimensional step model to study quantitatively the growth of step bunches on Si(111) surfaces induced by a direct heating current. Parameters in the model are fixed from experimental measurements near 900 deg C under the assumption that there is local mass transport through surface diffusion and that step motion is limited by the attachment rate of adatoms to step edges. The direct heating current is treated as an external driving force acting on each adatom. Numerical calculations show both qualitative and quantitative agreement with experiment. A force in the step down direction will destabilize the uniform step train towards step bunching. The average size of the step bunches grows with electromigration time as t^beta, with beta = 0.5, in agreement with experiment and with an analytical treatment of the steady states. The model is extended to include the effect of direct hopping of adatoms between different terraces. Monte-Carlo simulations of a solid-on-solid model, using physically motivated assumptions about the dynamics of surface diffusion and attachment at step edges, are carried out to study two dimensional features that are left out of the present step model and to test its validity. These simulations give much better agreement with experiment than previous work. We find a new step bending instability when the driving force is along the step edge direction. This instability causes the formation of step bunches and antisteps that is similar to that observed in experiment.Comment: 11 pages, 7 figure

    Surface Kinetics and Generation of Different Terms in a Conservative Growth Equation

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    A method based on the kinetics of adatoms on a growing surface under epitaxial growth at low temperature in (1+1) dimensions is proposed to obtain a closed form of local growth equation. It can be generalized to any growth problem as long as diffusion of adatoms govern the surface morphology. The method can be easily extended to higher dimensions. The kinetic processes contributing to various terms in the growth equation (GE) are identified from the analysis of in-plane and downward hops. In particular, processes corresponding to the (h -> -h) symmetry breaking term and curvature dependent term are discussed. Consequence of these terms on the stable and unstable transition in (1+1) dimensions is analyzed. In (2+1) dimensions it is shown that an additional (h -> -h) symmetry breaking term is generated due to the in-plane curvature associated with the mound like structures. This term is independent of any diffusion barrier differences between in-plane and out of-plane migration. It is argued that terms generated in the presence of downward hops are the relevant terms in a GE. Growth equation in the closed form is obtained for various growth models introduced to capture most of the processes in experimental Molecular Beam Epitaxial growth. Effect of dissociation is also considered and is seen to have stabilizing effect on the growth. It is shown that for uphill current the GE approach fails to describe the growth since a given GE is not valid over the entire substrate.Comment: 14 pages, 7 figure

    Unconventional MBE Strategies from Computer Simulations for Optimized Growth Conditions

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    We investigate the influence of step edge diffusion (SED) and desorption on Molecular Beam Epitaxy (MBE) using kinetic Monte-Carlo simulations of the solid-on-solid (SOS) model. Based on these investigations we propose two strategies to optimize MBE growth. The strategies are applicable in different growth regimes: During layer-by-layer growth one can exploit the presence of desorption in order to achieve smooth surfaces. By additional short high flux pulses of particles one can increase the growth rate and assist layer-by-layer growth. If, however, mounds are formed (non-layer-by-layer growth) the SED can be used to control size and shape of the three-dimensional structures. By controlled reduction of the flux with time we achieve a fast coarsening together with smooth step edges.Comment: 19 pages, 7 figures, submitted to Phys. Rev.

    Non-conserved dynamics of steps on vicinal surfaces during electromigration-induced step bunching

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    We report new results on the non-conserved dynamics of parallel steps on vicinal surfaces in the case of sublimation with electromigration and step-step interactions. The derived equations are valid in the quasistatic approximation and in the limit f1lDl±lif^{-1}\gg l_D\gg l_{\pm} \gg l_i, where ff is the inverse electromigration length, lDl_D the diffusion length, l±l_{\pm} the kinetic lengths and lil_i the terrace widths. The coupling between crystal sublimation and step-step interactions induces non-linear, non-conservative terms in the equations of motion. Depending on the initial conditions, this leads to interrupted coarsening, anticoarsening of step bunches or periodic switching between step trains of different numbers of bunches.Comment: 11 pages, 4 figures; revised and extended versio

    Morphology of epitaxial core-shell nanowires

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    We analyze the morphological stability against azimuthal, axial, and general helical perturbations for epitaxial core-shell nanowires in the growth regimes limited by either surface diffusion or evaporation-condensation surface kinetics. For both regimes, we find that geometric parameters (i.e., core radius and shell thickness) play a central role in determining whether the nanowire remains cylindrical or its shell breaks up into epitaxial islands similar to those observed during Stranski-Krastanow growth in thin epilayers. The combination of small cores and rapid growth of the shell emerge as key ingredients for stable shell growth. Our results provide an explanation for the different core-shell morphologies reported in the Si-Ge system experimentally, and also identify a growth-induced intrinsic mechanism for the formation of helical nanowires.Comment: In press, Nano Letters (7 pages, 4 figures

    Adatom diffusion on vicinal surfaces with permeable steps

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    We study the behavior of single atoms on an infinite vicinal surface assuming certain degree of step permeability. Assuming complete lack of re-evaporation an ruling out nucleation the atoms will inevitably join kink sites at the steps but can do many attempts before that. Increasing the probability of step permeability or the kink spacing lead to increase of the number of steps crossed before incorporation of the atoms into kink sites. The asymmetry of the attachment-detachment kinetics (Ehrlich-Schwoebel effect) suppresses the step permeability and completely eliminates it in the extreme case of infinite Ehrlich-Schwoebel barrier. The average number of permeability events per atom scales with the average kink spacing. A negligibly small drift of the adatoms in a direction perpendicular to the steps leads to a significant asymmetry of the distribution of the permeability events the atoms thus visiting more distant steps in the direction of the drift.Comment: 12 pages, 6 figure
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