Unoccupied Band Structure of NbSe2 by Very-Low-Energy Electron Diffraction: Experiment and Theory

A combined experimental and theoretical study of very-low-energy electron diffraction at the (0001) surface of 2H-NbSe2 is presented. Electron transmission spectra have been measured for energies up to 50 eV above the Fermi level with k|| varying along the GammaK line of the Brillouin zone. Ab initio calculations of the spectra have been performed with the extended linear augmented plane wave k-p method. The experimental spectra are interpreted in terms of three-dimensional one-electron band structure. Special attention is paid to the quasi-particle lifetimes: by comparing the broadening of the spectral structures in the experimental and calculated spectra the energy dependence of the optical potential Vi is determined. A sharp increase of Vi at 20 eV is detected, which is associated with a plasmon peak in the Im(-1/epsilon) function. Furthermore, the electron energy loss spectrum and the reflectivity of NbSe2 are calculated ab initio and compared with optical experiments. The obtained information on the dispersions and lifetimes of the unoccupied states is important for photoemission studies of the 3D band structure of the valence band.Comment: 17 pages, 11 Postscript figures, submitted to Phys. Rev.

Origin of the photoemission final-state effects in Bi2Sr2CaCu2O8 by very-low-energy electron diffraction

Very-low-energy electron diffraction with a support of full-potential band calculations is used to achieve the energy positions, K// dispersions, lifetimes and Fourier compositions of the photoemission final states in Bi2Sr2CaCu2O8 at low excitation energies. Highly structured final states explain the dramatic matrix element effects in photoemission. Intense c(2x2) diffraction reveals a significant extrinsic contribution to the shadow Fermi surface. The final-state diffraction effects can be utilized to tune the photoemission experiment on specific valence states or Fermi surface replicas.Comment: 4 pages, 3 Postscript figures, submitted to Phys. Rev. Lett; major revision

Atomic correlations in itinerant ferromagnets: quasi-particle bands of nickel

We measure the band structure of nickel along various high-symmetry lines of the bulk Brillouin zone with angle-resolved photoelectron spectroscopy. The Gutzwiller theory for a nine-band Hubbard model whose tight-binding parameters are obtained from non-magnetic density-functional theory resolves most of the long-standing discrepancies between experiment and theory on nickel. Thereby we support the view of itinerant ferromagnetism as induced by atomic correlations.Comment: 4 page REVTeX 4.0, one figure, one tabl

Band Mapping in One-Step Photoemission Theory: Multi-Bloch-Wave Structure of Final States and Interference Effects

A novel Bloch-waves based one-step theory of photoemission is developed within the augmented plane wave formalism. Implications of multi-Bloch-wave structure of photoelectron final states for band mapping are established. Interference between Bloch components of initial and final states leads to prominent spectral features with characteristic frequency dispersion experimentally observed in VSe_2 and TiTe_2. Interference effects together with a non-free-electron nature of final states strongly limit the applicability of the common direct transitions band mapping approach, making the tool of one-step analysis indispensable.Comment: 4 jpg figure

Electronic structure of GaAs1-xNx alloy by soft-X-ray absorption and emission: Origin of the reduced optical efficiency

The local electronic structure of N atoms in a diluted GaAs1-xNx (x=3%) alloy, in view of applications in optoelectronics, is determined for the first time using soft-X-ray absorption (SXA) and emission (SXE). Deviations from crystalline GaN, in particular in the conduction band, are dramatic. Employing the orbital character and elemental specificity of the SXE/SXA spectroscopies, we identify a charge transfer from the N atoms at the valence band maximum, reducing the overlap with the wavefunction in conduction band minimum, as the main factor limiting the optical efficiency of GaAs1-xNx alloys. Moreover, a k-conserving process of resonant inelastic x-ray scattering involving the L1 derived valence and conduction states is discovered.Comment: 3 pages, physica status solidi (Rapid Research Notes), in pres