3,484 research outputs found
Raoult's Formalism in Understanding Low Temperature Growth of GaN Nanowires using Binary Precursor
Growth of GaN nanowires are carried out via metal initiated
vapor-liquid-solid mechanism, with Au as the catalyst. In chemical vapour
deposition technique, GaN nanowires are usually grown at high temperatures in
the range of 900-1100 ^oC because of low vapor pressure of Ga below 900 ^oC. In
the present study, we have grown the GaN nanowires at a temperature, as low as
700 ^oC. Role of indium in the reduction of growth temperature is discussed in
the ambit of Raoult's law. Indium is used to increase the vapor pressure of the
Ga sufficiently to evaporate even at low temperature initiating the growth of
GaN nanowires. In addition to the studies related to structural and vibrational
properties, optical properties of the grown nanowires are also reported for
detailed structural analysis.Comment: 24 pages, 7 figures, journa
Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires
The physicochemical processes at the surfaces of semiconductor nanostructures
involved in electrochemical and sensing devices are strongly influenced by the
presence of intrinsic or extrinsic defects. To reveal the surface controlled
sensing mechanism, intentional lattice oxygen defects are created on the
surfaces of GaN nanowires for the elucidation of charge transfer process in
methane (CH4) sensing. Experimental and simulation results of electron energy
loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the
possible presence of 2(ON) and VGa-3ON defect complexes. A global resistive
response for sensor devices of ensemble nanowires and a localized charge
transfer process in single GaN nanowires are studied in situ scanning by Kelvin
probe microscopy (SKPM). A localized charge transfer process, involving the
VGa-3ON defect complex on nanowire surface is attributed in controlling the
global gas sensing behavior of the oxygen rich ensemble GaN nanowires.Comment: 42 pages, 6 figures, Journa
- …