Strain modification in coherent Ge and SixGe1–x epitaxial films by ion-assisted molecular beam epitaxy

We have observed large changes in Ge and SixGe1–x layer strain during concurrent molecular beam epitaxial growth and low-energy bombardment. Layers are uniformly strained, coherent with the substrate, and contain no dislocations, suggesting that misfit strain is accommodated by free volume changes associated with injection of ion bombardment induced point defects. The dependence of layer strain on ion energy, ion-atom flux ratio, and temperature is consistent with the presence of a uniform dispersion of point defects at high concentration. Implications for distinguishing ion-surface interactions from ion-bulk interactions are discussed

Dynamical Properties of a Growing Surface on a Random Substrate

The dynamics of the discrete Gaussian model for the surface of a crystal deposited on a disordered substrate is investigated by Monte Carlo simulations. The mobility of the growing surface was studied as a function of a small driving force $F$ and temperature $T$. A continuous transition is found from high-temperature phase characterized by linear response to a low-temperature phase with nonlinear, temperature dependent response. In the simulated regime of driving force the numerical results are in general agreement with recent dynamic renormalization group predictions.Comment: 10 pages, latex, 3 figures, to appear in Phys. Rev. E (RC

Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves

Results of a determination of strain perpendicular to the surface and of the damage in (100) Si single crystals irradiated by 250-keV Ar+ ions at 77 K are presented. Double-crystal x-ray diffraction and dynamical x-ray diffraction theory are used. Trial strain and damage distributions were guided by transmission electron microscope observations and Monte Carlo simulation of ion energy deposition. The perpendicular strain and damage profiles, determined after sequentially removing thin layers of Ar+-implanted Si, were shown to be self-consistent, proving the uniqueness of the deconvolution. Agreement between calculated and experimental rocking curves is obtained with strain and damage distributions which closely follow the shape of the trim simulations from the maximum damage to the end of the ion range but fall off more rapidly than the simulation curve near the surface. Comparison of the trim simulation and the strain profile of Ar+-implanted Si reveals the importance of annealing during and after implantation and the role of complex defects in the final residual strain distribution

Influence of substrate temperature on lattice strain field and phase transition in MeV oxygen ion implanted GaAs crystals

A detailed study of the influence of substrate temperature on the radiation-induced lattice strain field and crystalline-to-amorphous (c-a) phase transition in MeV oxygen ion implanted GaAs crystals has been made using channeling Rutherford backscattering spectroscopy, secondary ion mass spectrometry, and the x-ray rocking curve technique. A comparison has been made between the cases of room temperature (RT) and low temperature (LT) (about 100 K) implantation. A strong in situ dynamic annealing process is found in RT implantation at a moderate beam current, resulting in a uniform positive strain field in the implanted layer. LT implantation introduces a freeze-in effect which impedes the recombination and diffusion of initial radiation-created lattice damage and defects, and in turn drives more efficiently the c-a transition as well as strain saturation and relaxation. The results are interpreted with a spike damage model in which the defect production process is described in terms of the competition between defect generation by nuclear spikes and defects diffusion and recombination stimulated by electronic spikes. It is also suggested that the excess population of vacancies and their complexes is responsible for lattice spacing expansion in ion-implanted GaAs crystals

Portable Valve-less Peristaltic Micro-pump Design and Fabrication

This paper is to describe a design and fabrication method for a valve-less peristaltic micro-pump. The valve-less peristaltic micro-pump with three membrane chambers in a serial is actuated by three piezoelectric (PZT) actuators. With the fluidic flow design, liquid in the flow channel is pumped to a constant flow speed ranged from 0.4 to 0.48 mm/s. In term of the maximum flow rate of the micro-pump is about 365 mircoliters/min, when the applied voltage is 24V and frequency 50 Hz. Photolithography process was used to fabricate the micro-pump mold. PDMS molding and PDMS bonding method were used to fabricate the micro-channel and actuator chambers. A portable drive controller was designed to control three PZT actuators in a proper sequence to drive the chamber membrane. Then, all parts were integrated into the portable valve-less peristaltic micro-pump system.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838

Broken time-reversal symmetry in Josephson junction involving two-band superconductors

A novel time-reversal symmetry breaking state is found theoretically in the Josephson junction between the two-gap superconductor and the conventional s-wave superconductor. This occurs due to the frustration between the three order parameters analogous to the two antiferromagnetically coupled XY-spins put under a magnetic field. This leads to the interface states with the energies inside the superconducting gap. Possible experimental observations of this state with broken time-reversal symmetry are discussed.Comment: 9 pages, 1 figur