Evidence for “dark charge” from photoluminescence measurements in wide InGaN quantum wells

Wide (15-25 nm) InGaN/GaN quantum wells in LED structures were studied by time-resolved photoluminescence (PL) spectroscopy and compared with narrow (2.6 nm) wells in similar LED structures. Using below-barrier pulsed excitation in the microsecond range, we measured increase and decay of PL pulses. These pulses in wide wells at low-intensity excitation show very slow increase and fast decay. Moreover, the shape of the pulses changes when we vary the separation between them. None of these effects occurs for samples with narrow wells. The unusual properties of wide wells are attributed to the presence of “dark charge” i.e., electrons and holes in the ground states. Their wave functions are spatially separated and due to negligible overlap they do not contribute to emission. However, they screen the built-in field in the well very effectively so that excited states appear with significant overlap and give rise to PL. A simple model of recombination kinetics including “dark charge” explains the observations qualitatively

Coherent state of a nonlinear oscillator and its revival dynamics

The coherent state of a nonlinear oscillator having a nonlinear spectrum is constructed using Gazeau Klauder formalism. The weighting distribution and the Mandel parameter are studied. Details of the revival structure arising from different time scales underlying the quadratic energy spectrum are investigated by the phase analysis of the autocorrelation function

PT-symmetric Solutions of Schrodinger Equation with position-dependent mass via Point Canonical Transformation

PT-symmetric solutions of Schrodinger equation are obtained for the Scarf and generalized harmonic oscillator potentials with the position-dependent mass. A general point canonical transformation is applied by using a free parameter. Three different forms of mass distributions are used. A set of the energy eigenvalues of the bound states and corresponding wave functions for target potentials are obtained as a function of the free parameter.Comment: 13 page

Deterministic Chaos and Fractal Complexity in the Dynamics of Cardiovascular Behavior: Perspectives on a New Frontier

Physiological systems such as the cardiovascular system are capable of five kinds of behavior: equilibrium, periodicity, quasi-periodicity, deterministic chaos and random behavior. Systems adopt one or more these behaviors depending on the function they have evolved to perform. The emerging mathematical concepts of fractal mathematics and chaos theory are extending our ability to study physiological behavior. Fractal geometry is observed in the physical structure of pathways, networks and macroscopic structures such the vasculature and the His-Purkinje network of the heart. Fractal structure is also observed in processes in time, such as heart rate variability. Chaos theory describes the underlying dynamics of the system, and chaotic behavior is also observed at many levels, from effector molecules in the cell to heart function and blood pressure. This review discusses the role of fractal structure and chaos in the cardiovascular system at the level of the heart and blood vessels, and at the cellular level. Key functional consequences of these phenomena are highlighted, and a perspective provided on the possible evolutionary origins of chaotic behavior and fractal structure. The discussion is non-mathematical with an emphasis on the key underlying concepts

Wide Range Wavelength Tuning of InGaAsP/InP Laser Diodes

We present results of theoretical studies of external tuning for laser diodes based on InGaAsP/InP heterostructures at temperatures from 300 K down to 80 K and at hydrostatic pressures up to 2.27 GPa. The tuning range achieved by pressure and grating was 390 nm (from 1220 nm to 1610 nm). At lower temperatures the tuning range achieved with grating was significantly reduced. Our results indicate that pressure tuning is much more effective than temperature tuning when combined with tuning by external grating

Phonon Deformation Potentials from Raman Measurements on Semiconductor Membranes

It is shown that the phonon deformation potentials in semiconductors can be determined by Raman scattering on hydrostatically and biaxially deformed samples. The complete data includes biaxial deformation in the (100), (111), and (110) planes. Biaxial strain is applied to the sample using the recently developed membrane method. The phonon displacement under biaxial strain can be directly obtained from Raman measurements on a single membrane provided we determine the strain from the splitting of the band gap using e.g. the photoreflectance technique. Alternatively, the ratios of different phonon shifts can supply the necessary information. The method is illustrated with experimental results for GaP

Pressure and Temperature Dependence of Threshold Current in Semiconductor Lasers Based on InGaAs/GaAs Quantum-Well Systems

In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be achieved by applying high pressure and low temperature. We report the experimentally measured dependence of the threshold current and emission energy on pressure and temperature in InGaAs/GaAs quantum-well lasers and provide the simple theoretical explanation of the physics behind the experimental findings