Photo-response of the conductivity in functionalized pentacene compounds

We report the first investigation of the photo-response of the conductivity of a new class of organic semiconductors based on functionalized pentacene. These materials form high quality single crystals that exhibit a thermally activated resistivity. Unlike pure pentacene, the functionalized derivatives are readily soluble in acetone, and can be evaporated or spin-cast as thin films for potential device applications. The electrical conductivity of the single crystal materials is noticeably sensitive to ambient light changes. The purpose, therefore, of the present study, is to determine the nature of the photo-response in terms of carrier activation vs. heating effects, and also to measure the dependence of the photo-response on photon energy. We describe a new method, involving the temperature dependent photo-response, which allows an unambiguous identification of the signature of heating effects in materials with a thermally activated conductivity. We find strong evidence that the photo-response in the materials investigated is predominantly a highly localized heating mechanism. Wavelength dependent studies of the photo-response reveal resonant features and cut-offs that indicate the photon energy absorption is related to the electronic structure of the material.Comment: Preprint: 18 pages total,7 figure

Debye relaxation in high magnetic fields

Dielectric relaxation is universal in characterizing polar liquids and solids, insulators, and semiconductors, and the theoretical models are well developed. However, in high magnetic fields, previously unknown aspects of dielectric relaxation can be revealed and exploited. Here, we report low temperature dielectric relaxation measurements in lightly doped silicon in high dc magnetic fields B both parallel and perpendicular to the applied ac electric field E. For B//E, we observe a temperature and magnetic field dependent dielectric dispersion e(w)characteristic of conventional Debye relaxation where the free carrier concentration is dependent on thermal dopant ionization, magnetic freeze-out, and/or magnetic localization effects. However, for BperpE, anomalous dispersion emerges in e(w) with increasing magnetic field. It is shown that the Debye formalism can be simply extended by adding the Lorentz force to describe the general response of a dielectric in crossed magnetic and electric fields. Moreover, we predict and observe a new transverse dielectric response EH perp B perp E not previously described in magneto-dielectric measurements. The new formalism allows the determination of the mobility and the ability to discriminate between magnetic localization/freeze out and Lorentz force effects in the magneto-dielectric response.Comment: 19 pages, 6 figure

Substitution Effect by Deuterated Donors on Superconductivity in κ\kappa-(BEDT-TTF)2_2Cu[N(CN)2_2]Br

We investigate the superconductivity in the deuterated BEDT-TTF molecular substitution system $\kappa$-[(h8-BEDT-TTF)$_{1-x}$(d8-BEDT-TTF)$_x$]$_2$Cu[N(CN)$_2$]Br, where h8 and d8 denote fully hydrogenated and deuterated molecules, respectively. Systematic and wide range ($x$ = 0 -- 1) substitution can control chemical pressure finely near the Mott boundary, which results in the modification of the superconductivity. After cooling slowly, the increase of $T_{\textrm{c}}$ observed up to $x \sim$ 0.1 is evidently caused by the chemical pressure effect. Neither reduction of $T_{\textrm{c}}$ nor suppression of superconducting volume fraction is found below $x \sim$ 0.5. This demonstrates that the effect of disorder by substitution is negligible in the present system. With further increase of $x$, both $T_{\textrm{c}}$ and superconducting volume fraction start to decrease toward the values in $x$ = 1.Comment: J. Phys. Soc. Jp

Large-scale electronic-structure theory and nanoscale defects formed in cleavage process of silicon

Several methods are constructed for large-scale electronic structure calculations. Test calculations are carried out with up to 10^7 atoms. As an application, cleavage process of silicon is investigated by molecular dynamics simulation with 10-nm-scale systems. As well as the elementary formation process of the (111)-(2 x 1) surface, we obtain nanoscale defects, that is, step formation and bending of cleavage path into favorite (experimentally observed) planes. These results are consistent to experiments. Moreover, the simulation result predicts an explicit step structure on the cleaved surface, which shows a bias-dependent STM image.Comment: 4 page 4 figures. A PDF file with better graphics is available at http://fujimac.t.u-tokyo.ac.jp/lses

Experimental observation of Frohlich superconductivity in high magnetic fields

Resistivity and irreversible magnetisation data taken within the high-magnetic-field CDWx phase of the quasi-two-dimensional organic metal alpha-(BEDT-TTF)2KHg(SCN)4 are shown to be consistent with a field-induced inhomogeneous superconducting phase. In-plane skin-depth measurements show that the resistive transition on entering the CDWx phase is both isotropic and representative of the bulk.Comment: ten pages, four figure

Nanoscale imaging of domain dynamics and retention in ferroelectric thin films

We report results on the direct observation of the microscopic origins of backswitching in ferroelectric thin films. The piezoelectric response generated in the film by a biased atomic force microscope tip was used to obtain static and dynamic piezoelectric images of individual grains in a polycrystalline material. We demonstrate that polarization reversal occurs under no external field (i.e., loss of remanent polarization) via a dispersive continuous-time random walk process, identified by a stretched exponential decay of the remanent polarization

Quantum Hall Transitions in (TMTSF)2_2PF6_6

We have studied the temperature dependence of the integer quantum Hall transitions in the molecular crystal (TMTSF)$_2$PF$_6$. We find that the transition width between the quantum Hall plateaus does not exhibit the universal power-law scaling behavior of the integer quantum Hall effect observed in semiconducting devices. Instead, the slope of the $\rho_{xy}$ risers, $d\rho_{xy}/dB$, and the (inverse) width of the $\rho_{xx}$ peaks, $(\Delta B)^{-1}$, show a BCS-like energy gap temperature dependence. We discuss these results in terms of the field-induced spin-density wave gap and order parameter of the system.Comment: 10 pages, RevTeX, 4 PostScript figure