3 research outputs found
Metallic proximity effect in ballistic graphene with resonant scatterers
We study the effect of resonant scatterers on the local density of states in
a rectangular graphene setup with metallic leads. We find that the density of
states in a vicinity of the Dirac point acquires a strong position dependence
due to both metallic proximity effect and impurity scattering. This effect may
prevent uniform gating of weakly-doped samples. We also demonstrate that even a
single-atom impurity may essentially alter electronic states at low-doping on
distances of the order of the sample size from the impurity.Comment: 9 pages, 2 figure
Charge transport in graphene with resonant scatterers
The full counting statistics for the charge transport through an undoped
graphene sheet in the presence of strong potential impurities is studied.
Treating the scattering off the impurity in the s-wave approximation, we
calculate the impurity correction to the cumulant generating function. This
correction is universal provided the impurity strength is tuned to a resonant
value. In particular, the conductance of the sample acquires a correction of
16e^2/(pi^2 h) per resonant impurity.Comment: 11 pages, 6 figures; published version, appendix with technical
details adde
Ballistic charge transport in chiral-symmetric few-layer graphene
A transfer matrix approach to study ballistic charge transport in few-layer
graphene with chiral-symmetric stacking configurations is developed. We
demonstrate that the chiral symmetry justifies a non-Abelian gauge
transformation at the spectral degeneracy point (zero energy). This
transformation proves the equivalence of zero-energy transport properties of
the multilayer to those of the system of uncoupled monolayers. Similar
transformation can be applied in order to gauge away an arbitrary magnetic
field, weak strain, and hopping disorder in the bulk of the sample. Finally, we
calculate the full-counting statistics at arbitrary energy for different
stacking configurations. The predicted gate-voltage dependence of conductance
and noise can be measured in clean multilayer samples with generic metallic
leads.Comment: 6 pages, 5 figures; EPL published versio