Microporous poly- and monocrystalline diamond films produced from chemical vapor deposited diamond-germanium composites

We report on a novel method for porous diamond fabrication, which is based on the synthesis of diamond-germanium composite films followed by etching of Ge component. The composites were grown by microwave plasma assisted CVD in CH4-H2-GeH4 mixtures on (100) silicon, microcrystalline- and single-crystal diamond substrates. The structure and the phase composition of the films before and after the etching were analyzed with scanning electron microscopy and Raman spectroscopy. The films revealed a bright emission of GeV color centers due to diamond doping with Ge, as evidenced by photoluminescence spectroscopy. The possible applications of the porous diamond films include thermal management, surfaces with superhydrophobic properties, chromatography, supercapacitors etc

Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals

Tin-Vacancy (Sn-V) colour centres in diamond have a spin coherence time in the millisecond range at temperatures of 2 K, so they are promising to be used in diamond-based quantum optical devices. However, the incorporation of large Sn atoms into a dense diamond lattice is a non-trivial problem. The objective of our work is to use microwave plasma-assisted chemical vapour deposition (CVD) to grow Sn-doped diamond with submicron SnO2 particles as a solid-state source of impurity. Well-faceted diamond microcrystals with sizes of a few micrometres were formed on AlN substrates. The photoluminescence (PL) signal with zero-phonon line (ZPL) peak for Sn-V centre at ≈620 nm was measured at room temperature (RT) and at 7 K. The peak width (full width at half-maximum) was measured to be 1.1–1.7 nm at RT and ≈0.05 nm at 7 K. The observed variations of ZPL shape and position, in particular, narrowing of PL peak at RT and formation of single-line fine structure at low-T, are attributed to strain in the crystallites. The diamond doping with Sn via CVD process offers a new route to from Sn-V colour centre in the bulk of the diamond crystallites

Effect of diamond seeds size on the adhesion of CVD diamond coatings on WC-Co instrument

In this study, we investigated the effect of the size of diamond seeds on the adhesion of multilayered polycrystalline diamond (PCD) films, grown by microwave plasma-assisted chemical vapor deposition (MPCVD). For that, identical WC-Co substrates were separately seeded by a set of diamond powders with various average particle sizes from water-based suspensions using similar seeding procedures. This investigation included powders with a difference in particle sizes of nearly 3 orders of magnitude: from 5 nm up to 2-4 μm. Seeded substrates were used to grow 8-10 μm thick multilayered PCD films using MPCVD with time-limited cycling injections of N2 gas. The Raman spectra and scanning electron microscopy (SEM) studies showed the similarity of microstructure and phase composition of all grown films, which confirmed that all films were grown in similar conditions. The performed scratch tests revealed sufficient differences in the adhesion of the films seeded with different diamond particles. The PCD film grown on 250-500 nm particles delaminated even before any mechanical investigations. The substrates seeded with 50 nm particles allowed the formation of the stable PCD film, but it started flaking under a load as small as 15 N. The 2-4 μm powder allowed the formation of PCD film with decent adhesion, which had local flaking under scratch test, which can be explained by the inhomogeneity of seeds distribution. Detonation nanodiamond (DND) powders allowed the formation of continuous diamond films with decent adhesion, however, powders with positive zeta potential were superior due to a much lower agglomeration of separate particles

Synthesis of Y₃Al₅O₁₂:Ce Powders for X-ray Luminescent Diamond Composites

A concentration series of Y3Al5O12:Ce solid solutions were prepared, and the composition demonstrating the highest X-ray luminescence intensity of cerium was identified. Based on the best composition, a series of luminescent diamond–Y3Al5O12:Ce composite films were synthesized using microwave plasma-assisted chemical vapor deposition (CVD) in methane–hydrogen gas mixtures. Variations in the amounts of the embedded Y3Al5O12:Ce powders allowed for the fine-tuning of the luminescence intensity of the composite films

Synthesis of Y3Al5O12:Ce Powders for X-ray Luminescent Diamond Composites

A concentration series of Y3Al5O12:Ce solid solutions were prepared, and the composition demonstrating the highest X-ray luminescence intensity of cerium was identified. Based on the best composition, a series of luminescent diamond–Y3Al5O12:Ce composite films were synthesized using microwave plasma-assisted chemical vapor deposition (CVD) in methane–hydrogen gas mixtures. Variations in the amounts of the embedded Y3Al5O12:Ce powders allowed for the fine-tuning of the luminescence intensity of the composite films

Diamond seed dependent luminescence properties of CVD diamond composite

Diamond-based X-ray luminescent composites are robust materials to be used in synchrotrons and free-electron lasers to detect and visualize high-intensity X-ray beams. Such composites consist of luminescent rare-earth (RE) particles embedded into an X-ray transparent diamond matrix. In this work, polycrystalline diamond composites with embedded particles of EuF3, SrF2:Eu and YAG:Ce were grown by microwave plasma CVD using diamond seeds with an average particle size difference of two orders of magnitude: from 5 nm up to 500 nm, with positive and negative zeta potentials. The structure, phase composition, and luminescent characteristics of the resulting composite films were investigated and analyzed. We found that various particle types can be better-suited for different composites, and the exact seeding should be selected on the case-by-case basis. The direct comparison of various diamond-based composites, grown in the identical CVD conditions but with various luminescent powders, show that YAG:Ce particles in diamond allow achieving a brighter photoluminescence (PL) in comparison to Eu-based fluorides. However, the set of fluoride powders doped with Eu3+ ions allow obtaining unusually narrow (FWHM = 0.9 nm) and intensive line near 611 nm in PL spectra, which might be better-suited for detection and characterization applications rather than a broad peak of Ce with FWHM ≈ 120 nm

Annealing process and temperature effects on silicon-vacancy and germanium-vacancy centers in CVD grown polycrystalline diamond

The annealing treatment plays a crucial role in tailoring the properties of synthetic diamond materials, especially those doped with various elements in order to form specific color centers like nitrogen-vacancy (NV), silicon-vacancy (Si-V), germanium-vacancy (Ge-V), etc. This study delves into the annealing of 175 μm-thick Ge-doped polycrystalline diamond (PCD) films grown by microwave plasma-assisted chemical vapor deposition (MPCVD). Large-area PCD plate was cut into smaller equivalent 5 × 5 mm2 pieces, which were separately subjected to annealing in microwave plasma in H2 atmosphere, to annealing in vacuum or to annealing under high-pressure high-temperature conditions (HPHT, 5.9 GPa, 2000 °C). The structure, phase composition and photoluminescence (PL) of samples before and after various annealing processes were investigated. All applied types of annealing enhance both the Si-V and Ge-V lines in PL at room temperature. Increasing annealing temperature leads to gradual decrease of full widths at half-maxima (FWHM) of diamond Raman peak (1332.5 cm−1), as well as Si-V (738 nm) and Ge-V (602 nm) PL peaks. In addition, the limitations for each type of annealing are established. The obtained results are crucial for the design of CVD-grown Ge-doped and Si-doped PCD materials that can be used for applications in photonics such as single photon sources, biomarkers, as well as for the fabrication of optical diamond thermometers