Nonlinear dynamics of polariton scattering in semiconductor microcavity: bistability vs stimulated scattering

We demonstrate experimentally an unusual behavior of the parametric polariton scattering in semiconductor microcavity under a strong cw resonant excitation. The maximum of the scattered signal above the threshold of stimulated parametric scattering does not shift along the microcavity lower polariton branch with the change of pump detuning or angle of incidence but is stuck around the normal direction. We show theoretically that such a behavior can be modelled numerically by a system of Maxwell and nonlinear Schroedinger equations for cavity polaritons and explained via the competition between the bistability of a driven nonlinear MC polariton and the instabilities of parametric polariton-polariton scattering.Comment: 5 pages, 4 Postscript figures; corrected typo

Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures

The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7x10^(-8) cm^2/s has been evaluated for Zn(0.99)Mn(0.01)Se from comparison of experimental and numerical results. Calculations of the giant Zeeman splitting of the exciton states and the magnetization dynamics in the ordered alloys and parabolic quantum wells fabricated by the digital growth technique show perfect agreement with the experimental data. In both structure types the spin diffusion has an essential contribution to the magnetization dynamics.Comment: 12 pages, 11 figure

Continuous wave observation of massive polariton redistribution by stimulated scattering in semiconductor microcavities

A massive redistribution of the polariton occupancy to two specific wave vectors is observed under conditions of continuous wave excitation of a semiconductor microcavity. The “condensation” of the polaritons to the two specific states arises from stimulated scattering at final state occupancies of order unity. The stimulation phenomena, arising due to the bosonic character of the polariton quasiparticles, occur for conditions of resonant excitation of the lower polariton branch. High energy nonresonant excitation, as in most previous work, instead leads to conventional lasing in the vertical cavity structure

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slab

We study the polarization properties of light emitted by quantum dots that are embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the wave\-guide layer has been shown to result in a high circular polarization degree $\rho_c$ of the quantum dot emission in the absence of external magnetic field. The physical nature of the phenomenon can be understood in terms of the reciprocity principle taking into account the structural symmetry. At the resonance wavelength, the magnitude of $|\rho_c|$ is predicted to exceed 98%. The experimentally achieved value of $|\rho_c|=81$% is smaller, which is due to the contribution of unpolarized light scattered by grating defects, thus breaking its periodicity. The achieved polarization degree estimated removing the unpolarized nonresonant background from the emission spectra can be estimated to be as high as 96%, close to the theoretical prediction

Magnetophonon resonance in photoluminescence excitation spectra of magnetoexcitons in GaAs/Al0.3Ga0.7As superlattice

Strong increase in the intensity of the peaks of excited magneto-exciton (ME) states in the photoluminescence excitation (PLE) spectra recorded for the ground heavy-hole magneto-excitons (of the 1sHH type) has been found in a GaAs/AlGaAs superlattice in strong magnetic field B applied normal to the sample layers. While varying B the intensities of the PLE peaks have been measured as functions of energy separation $\Delta E$ between excited ME peaks and the ground state of the system. The resonance profiles have been found to have maxima at $\Delta E_{\rm max}$ close to the energy of the GaAs LO-phonon. However, the value of $\Delta E_{\rm max}$ depends on quantum numbers of the excited ME state. The revealed very low quantum efficiency of the investigated sample allows us to ascribe the observed resonance to the enhancement of the non-radiative magneto-exciton relaxation rate arising due to LO-phonon emission. The presented theoretical model, being in a good agreement with experimental observations, provides a method to extract 1sHH magneto-exciton ``in-plane" dispersion from the dependence of $\Delta E_{\rm max}$ on the excited ME state quantum numbers.Comment: 9 pages, 6 figure

Full coherent control of nuclear spins in an optically pumped single quantum dot

Highly polarized nuclear spins within a semiconductor quantum dot (QD) induce effective magnetic (Overhauser) fields of up to several Tesla acting on the electron spin or up to a few hundred mT for the hole spin. Recently this has been recognized as a resource for intrinsic control of QD-based spin quantum bits. However, only static long-lived Overhauser fields could be used. Here we demonstrate fast redirection on the microsecond time-scale of Overhauser fields of the order of 0.5 T experienced by a single electron spin in an optically pumped GaAs quantum dot. This has been achieved using full coherent control of an ensemble of 10^3-10^4 optically polarized nuclear spins by sequences of short radio-frequency (rf) pulses. These results open the way to a new class of experiments using rf techniques to achieve highly-correlated nuclear spins in quantum dots, such as adiabatic demagnetization in the rotating frame leading to sub-micro K nuclear spin temperatures, rapid adiabatic passage, and spin squeezing

Polarization Control of the Non-linear Emission on Semiconductor Microcavities

The degree of circular polarization ($\wp$) of the non-linear emission in semiconductor microcavities is controlled by changing the exciton-cavity detuning. The polariton relaxation towards \textbf{K} $\sim 0$ cavity-like states is governed by final-state stimulated scattering. The helicity of the emission is selected due to the lifting of the degeneracy of the $\pm 1$ spin levels at \textbf{K} $\sim 0$. At short times after a pulsed excitation $\wp$ reaches very large values, either positive or negative, as a result of stimulated scattering to the spin level of lowest energy ($+1/-1$ spin for positive/negative detuning).Comment: 8 pages, 3 eps figures, RevTeX, Physical Review Letters (accepted

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors

Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical and electronic properties of TMDs, for instance by depositing them on nano-structured surfaces, where position-dependent strain can be produced on the nano-scale. Here, we demonstrate strain-induced modifications of the optical properties of mono- and bilayer TMD WSe$_2$ placed on photonic nano-antennas made from gallium phosphide (GaP). Photoluminescence (PL) from the strained areas of the TMD layer is enhanced owing to the efficient coupling with the confined optical mode of the nano-antenna. Thus, by following the shift of the PL peak, we deduce the changes in the strain in WSe$_2$ deposited on the nano-antennas of different radii. In agreement with the presented theory, strain up to $\approx 1.4 \%$ is observed for WSe$_2$ monolayers. We also estimate that $>3\%$ strain is achieved in bilayers, accompanied with the emergence of a direct bandgap in this normally indirect-bandgap semiconductor. At cryogenic temperatures, we find evidence of the exciton confinement in the most strained nano-scale parts of the WSe$_2$ layers, as also predicted by our theoretical model. Our results, of direct relevance for both dielectric and plasmonic nano-antennas, show that strain in atomically thin semiconductors can be used as an additional parameter for engineering light-matter interaction in nano-photonic devices

Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas

Unique structural and optical properties of atomically thin two-dimensional semiconducting transition metal dichalcogenides enable in principle their efficient coupling to photonic cavities having the optical mode volume close to or below the diffraction limit. Recently, it has become possible to make all-dielectric nano-cavities with reduced mode volumes and negligible non-radiative losses. Here, we realise low-loss high-refractive-index dielectric gallium phosphide (GaP) nano-antennas with small mode volumes coupled to atomic mono- and bilayers of WSe2. We observe a photoluminescence enhancement exceeding 10(4) compared with WSe2 placed on planar GaP, and trace its origin to a combination of enhancement of the spontaneous emission rate, favourable modification of the photoluminescence directionality and enhanced optical excitation efficiency. A further effect of the coupling is observed in the photoluminescence polarisation dependence and in the Raman scattering signal enhancement exceeding 10(3). Our findings reveal dielectric nano-antennas as a promising platform for engineering light-matter coupling in two-dimensional semiconductors