Exotic Kondo-hole band resistivity and magnetoresistance of Ce1−x_{1-x}Lax_{x}Os4_4Sb12_{12} alloys

Electrical resistivity measurements of non-magnetic single-crystalline Ce$_{1-x}$La$_x$Os$_4$Sb$_{12}$ alloys, $x=0.02$ and 0.1, are reported for temperatures down to 20 mK and magnetic fields up to 18 T. At the lowest temperatures, the resistivity of Ce$_{0.98}$La$_{0.02}$Os$_4$Sb$_{12}$ has a Fermi-liquid-like temperature variation $\rho=\rho_0+A T^2$, but with negative $A$ in small fields. The resistivity has an unusually strong magnetic field dependence for a paramagnetic metal. The 20 mK resistivity increases by 75% between H=0 and 4 T and then decreases by 65% between 4 T and 18 T. Similarly, the $A$ coefficient increases with the field from -77 to 29$\mu\Omega$cmK$^{-2}$ between H=0 and 7 T and then decreases to 18$\mu\Omega$cmK$^{-2}$ for 18 T. This nontrivial temperature and field variation is attributed to the existence of a very narrow Kondo-hole band in the hybridization gap, which pins the Fermi energy. Due to disorder the Kondo-hole band has localized states close to the band edges. The resistivity for $x=0.1$ has a qualitatively similar behavior to that of $x=0.02$, but with a larger Kondo-hole band

Superconductivity and Antiferromagnetism: Hybridization Impurities in a Two-Band Spin-Gapped Electron System

We present the exact solution of a one-dimensional model of a spin-gapped correlated electron system with hybridization impurities exhibiting both magnetic and mixed-valence properties. The host supports superconducting fluctuations, with a spin gap. The localized electrons create a band of antiferromagnetic spin excitations inside the gap for concentrations x of the impurities below some critical value x_c. When x = x_c the spin gap closes and a ferrimagnetic phase appears. This is the first example of an exactly solvable model with coexisting superconducting and antiferromagnetic fluctuations which in addition supports a quantum phase transition to a (compensated) ferrimagnetic phase. We discuss the possible relevance of our results for experimental systems, in particular the U-based heavy-fermion materials.Comment: 4 page

Influence of Sample Gas Humidity on Product Ion Formation in High Kinetic Energy Ion Mobility Spectrometry (HiKE-IMS)

High Kinetic Energy Ion Mobility Spectrometers (HiKE-IMS) chemically ionize gaseous samples via reactant ions and separate the generated ions by their motion in a neutral gas under the influence of an electric field. Operation at reduced pressures of 10–40 mbar allows for reaching high reduced electric field strengths (E/N) of up to 120 Td. At these high E/N, the generated ions gain the namesake high kinetic energies, leading to a decrease in cluster size of the reactant ions by increasing the reaction rate of collision-induced cluster dissociation of hydrates. In positive ion polarity and in purified air, H3O+(H2O)n, NO+(H2O)n, and O2+•(H2O)p are the most abundant reactant ions. In this work, we investigate the effect of varying sample gas humidity on product ion formation for several model substances. Results show that increasing the sample gas humidity at high E/N of 120 Td shifts product ion formation from a charge transfer dominated reaction system to a proton transfer dominated reaction system. For HiKE-IMS operated at high E/N, the reduction in cluster size of reactant ions allows ionization of analytes with low proton affinity even at high relative humidity in the sample gas of RH = 75% at 303.15 K and 1013.25 hPa. In contrast to conventional IMS, where increasing the sample gas humidity inhibits ionization for various analytes, increasing sample gas humidity in HiKE-IMS operated at 120 Td is actually beneficial for ionization yield of most analytes investigated in this work as it increases the number of H3O+(H2O)n

Debye relaxation in high magnetic fields

Dielectric relaxation is universal in characterizing polar liquids and solids, insulators, and semiconductors, and the theoretical models are well developed. However, in high magnetic fields, previously unknown aspects of dielectric relaxation can be revealed and exploited. Here, we report low temperature dielectric relaxation measurements in lightly doped silicon in high dc magnetic fields B both parallel and perpendicular to the applied ac electric field E. For B//E, we observe a temperature and magnetic field dependent dielectric dispersion e(w)characteristic of conventional Debye relaxation where the free carrier concentration is dependent on thermal dopant ionization, magnetic freeze-out, and/or magnetic localization effects. However, for BperpE, anomalous dispersion emerges in e(w) with increasing magnetic field. It is shown that the Debye formalism can be simply extended by adding the Lorentz force to describe the general response of a dielectric in crossed magnetic and electric fields. Moreover, we predict and observe a new transverse dielectric response EH perp B perp E not previously described in magneto-dielectric measurements. The new formalism allows the determination of the mobility and the ability to discriminate between magnetic localization/freeze out and Lorentz force effects in the magneto-dielectric response.Comment: 19 pages, 6 figure

What's fair? How children assign reward to members of teams with differing causal structures

How do children reward individual members of a team that has just won or lost a game? We know that from pre-school age, children consider agents’ performance when allocating reward. Here we assess whether children can go further and appreciate performance in context: The same pattern of performance can contribute to a team outcome in different ways, depending on the underlying rule framework. Two experiments, with three age groups (4/5-year-olds, 6/7-year-olds, and adults), varied performance of team members, with the same performance patterns considered under three different game rules for winning or losing. These three rules created distinct underlying causal structures (additive, conjunctive, disjunctive), for how individual performance affected the overall team outcome. Even the youngest children differentiated between different game rules in their reward allocations. Rather than only rewarding individual performance, or whether the team won/lost, children were sensitive to the team structure and how players’ performance contributed to the win/loss under each of the three game rules. Not only do young children consider it fair to allocate resources based on merit, but they are also sensitive to the causal structure of the situation which dictates how individual contributions combine to determine the team outcome

Tuning Jeff = 1/2 Insulating State via Electron Doping and Pressure in Double-Layered Iridate Sr3Ir2O7

Sr3Ir2O7 exhibits a novel Jeff=1/2 insulating state that features a splitting between Jeff=1/2 and 3/2 bands due to spin-orbit interaction. We report a metal-insulator transition in Sr3Ir2O7 via either dilute electron doping (La3+ for Sr2+) or application of high pressure up to 35 GPa. Our study of single-crystal Sr3Ir2O7 and (Sr1-xLax)3Ir2O7 reveals that application of high hydrostatic pressure P leads to a drastic reduction in the electrical resistivity by as much as six orders of magnitude at a critical pressure, PC = 13.2 GPa, manifesting a closing of the gap; but further increasing P up to 35 GPa produces no fully metallic state at low temperatures, possibly as a consequence of localization due to a narrow distribution of bonding angles {\theta}. In contrast, slight doping of La3+ ions for Sr2+ ions in Sr3Ir2O7 readily induces a robust metallic state in the resistivity at low temperatures; the magnetic ordering temperature is significantly suppressed but remains finite for (Sr0.95La0.05)3Ir2O7 where the metallic state occurs. The results are discussed along with comparisons drawn with Sr2IrO4, a prototype of the Jeff = 1/2 insulator.Comment: five figure

A Simple Printed Circuit Board–Based Ion Funnel for Focusing Low m/z Ratio Ions with High Kinetic Energies at Elevated Pressure

Ion funnels are one of the key components for transferring ions from higher pressure into the vacuum. Typically, ion funnels are constructed of several different plate ring electrodes with a decreasing inner diameter where radio frequency (RF) voltages and electric DC fields are applied to the electrodes to focus and transport ion clouds. In this work, we developed and investigated a simple and low-cost ion funnel design that is based on standard printed circuit boards (PCB) with integrated planar electrodes including the signal distribution network. This ion funnel is capable of withstanding high electric fields with superimposed RF voltages due to its buried capacitors. To evaluate the ion focusing efficiency of the ion funnel, we simulated the movement of ions inside this funnel and experimentally evaluated the ion transfer. Our simulations show that a rectangular ion funnel like the PCB ion funnel has similar performance compared with conventional stacked ring funnels. Due to the hundredfold lower parasitic capacitance between the planar electrodes compared with conventional ion funnels, high RF voltage amplitudes up to 195 V and reduced electric DC field strengths up to 100 Td can be reached at a frequency of about 5 MHz. Thus, the funnel is appropriate to focus light ions at elevated pressures up to 20 mbar