7,325 research outputs found
Where is the pseudoscalar glueball ?
The pseudoscalar mesons with the masses higher than 1 GeV are assumed to
belong to the meson decuplet including the glueball as the basis state
supplementing the standard nonet of light states
. The decuplet is investigated by means of an algebraic approach based
on hypothesis of vanishing the exotic commutators of "charges" and
their time derivatives. These commutators result in a system of equations
determining contents of the isoscalar octet state in the physical isoscalar
mesons as well as the mass formula including all masses of the decuplet:
, K(1460), , and . The physical
isoscalar mesons , are expressed as superpositions of the "ideal"
states ( and ) and the glueball with the mixing
coefficient matrix following from the exotic commutator restrictions. Among
four one-parameter families of the calculated mixing matrix (numerous solutions
result from bad quality of data on the and K(1460) masses) there is
one family attributing the glueball-dominant composition to the
meson. Similarity between the pseudoscalar and scalar decuplets, analogy
between the whole spectra of the and mesons and affinity of
the glueball with excited states are also noticed.Comment: 18 pp., 2. figs., 2 tabs.; Published version. One of the authors
withdraws his nam
Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors
It is demonstrated that the nearest neighbor Mn pair on the GaAs (001)
surface has a lower energy for the [-110] direction comparing to the [110]
case. According to the group theory and the Luttinger's method of invariants,
this specific Mn distribution results in bulk uniaxial in-plane and
out-of-plane anisotropies. The sign and magnitude of the corresponding
anisotropy energies determined by a perturbation method and ab initio
computations are consistent with experimental results.Comment: 5 pages, 1 figur
Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors
Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically
and compared to experimental results. The recently developed model of spin
transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev.
B 72, 205322 (2005)] is employed. The model combines the disorder-free
Landauer-B\"uttiker formalism with the tight-binding description of the host
band structure. The obtained results show how much the spherical 4x4 kp model
[Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the
adiabatic limit, and reveal the dependence of DWR on the magnetization profile
and crystallographic orientation of the wall.Comment: 4 pages, 4 figures, submitted to Phys. Rev. B - Rapid Com
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