The RD53 Collaboration's SystemVerilog-UVM Simulation Framework and its General Applicability to Design of Advanced Pixel Readout Chips

The foreseen Phase 2 pixel upgrades at the LHC have very challenging requirements for the design of hybrid pixel readout chips. A versatile pixel simulation platform is as an essential development tool for the design, verification and optimization of both the system architecture and the pixel chip building blocks (Intellectual Properties, IPs). This work is focused on the implemented simulation and verification environment named VEPIX53, built using the SystemVerilog language and the Universal Verification Methodology (UVM) class library in the framework of the RD53 Collaboration. The environment supports pixel chips at different levels of description: its reusable components feature the generation of different classes of parameterized input hits to the pixel matrix, monitoring of pixel chip inputs and outputs, conformity checks between predicted and actual outputs and collection of statistics on system performance. The environment has been tested performing a study of shared architectures of the trigger latency buffering section of pixel chips. A fully shared architecture and a distributed one have been described at behavioral level and simulated; the resulting memory occupancy statistics and hit loss rates have subsequently been compared.Comment: 15 pages, 10 figures (11 figure files), submitted to Journal of Instrumentatio

Charge collection properties of irradiated depleted CMOS pixel test structures

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $\mu$m) with substrate biased through the implant on top and thinned (200 $\mu$m) with processed and metallised back plane. Depleted depth was estimated with Edge-TCT and collected charge was measured with $^{90}$Sr source using an external amplifier with 25 ns shaping time. Depleted depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 $\mu$m at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed back plane although the same depleted depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC

Compact, directional neutron detectors capable of high-resolution nuclear recoil imaging

We report on the design, production, and performance of compact 40-cm3 Time Projection Chambers (TPCs) that detect fast neutrons by measuring the three-dimensional (3D) ionization distribution of nuclear recoils in 4He:CO2 gas at atmospheric pressure. We use these detectors to characterize the fast-neutron flux inside the Belle II detector at the SuperKEKB electron–positron collider in Tsukuba, Japan, where the primary design constraint is a small form factor. We find that the TPCs meet or exceed all design specifications, and are capable of measuring the 3D surface shape and charge density profile of ionization clouds from nuclear recoils and charged tracks in exquisite detail. Scaled-up detectors based on the detection principle demonstrated here may be suitable for directional dark matter searches, measurements of coherent neutrino–nucleus scattering, and other experiments requiring precise detection of neutrons or nuclear recoils

3D electronics for hybrid pixel detectors – TWEPP-09

Future hybrid pixel detectors are asking for smaller pixels in order to improve spatial resolution and to deal with an increasing counting rate. Facing these requirements is foreseen to be done by microelectronics technology shrinking. However, this straightforward approach presents some disadvantages in term of performances and cost. New 3D technologies offer an alternative way with the advantage of technology mixing. For the upgrade of ATLAS pixel detector, a 3D conception of the read-out chip appeared as an interesting solution. Splitting the pixel functionalities into two separate levels will reduce pixel size and open the opportunity to take benefit of technology's mixing. Based on a previous prototype of the read-out chip FE-I4 (IBM 130nm), this paper presents the design of a hybrid pixel read-out chip using threedimensional Tezzaron-Chartered technology. In order to disentangle effects due to Chartered 130nm technology from effects involved by 3D architecture, a first translation of FEI4 prototype had been designed at the beginning of this year in Chartered 2D technology, and first test results will be presented in the last part of this paper

HV/HR-CMOS sensors for the ATLAS upgrade—concepts and test chip results

In order to extend its discovery potential, the Large Hadron Collider (LHC) will have a major upgrade (Phase II Upgrade) scheduled for 2022. The LHC after the upgrade, called High-Luminosity LHC (HL-LHC), will operate at a nominal leveled instantaneous luminosity of 5× 1034 cm−2 s−1, more than twice the expected Phase I . The new Inner Tracker needs to cope with this extremely high luminosity. Therefore it requires higher granularity, reduced material budget and increased radiation hardness of all components. A new pixel detector based on High Voltage CMOS (HVCMOS) technology targeting the upgraded ATLAS pixel detector is under study. The main advantages of the HVCMOS technology are its potential for low material budget, use of possible cheaper interconnection technologies, reduced pixel size and lower cost with respect to traditional hybrid pixel detector. Several first prototypes were produced and characterized within ATLAS upgrade R&D effort, to explore the performance and radiation hardness of this technology. In this paper, an overview of the HVCMOS sensor concepts is given. Laboratory tests and irradiation tests of two technologies, HVCMOS AMS and HVCMOS GF, are also given

Radiation-hard active pixel sensors for HL-LHC detector upgrades based on HV-CMOS technology

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

Low power discriminator for ATLAS pixel chip

The design of the front-end (FE) pixel electronics requires low power, low noise and low threshold dispersion. In this work, we propose a new architecture for the discriminator circuit. It is based on the principle of dynamic biasing and developed for the FE chip of the ATLAS pixel upgrade. This paper presents two discriminator structures where the bias current depends on the presence of a signal at the input of the discriminator. Since the activity in the FE chip is very low, the power consumption is largely reduced allowing the material reduction in the B-layer

Charge Pump Clock Generation PLL for the Data Output Block of the Upgraded ATLAS Pixel Front-End in 130 nm CMOS

FE-I4 is the 130 nm ATLAS pixel IC currently under development for upgraded Large Hadron Collider (LHC) luminosities. FE-I4 is based on a low-power analog pixel array and digital architecture concepts tuned to higher hit rates [1]. An integrated Phase Locked Loop (PLL) has been developed that locally generates a clock signal for the 160 Mbit/s output data stream from the 40 MHz bunch crossing reference clock. This block is designed for low power, low area consumption and recovers quickly from loss of lock related to single-event transients in the high radiation environment of the ATLAS pixel detector. After a general introduction to the new FE-I4 pixel front-end chip, this work focuses on the FE-I4 output blocks and on a first PLL prototype test chip submitted in early 2009. The PLL is nominally operated from a 1.2V supply and consumes 3.84mW of DC power. Under nominal operating conditions, the control voltage settles to within 2% of its nominal value in less than 700 ns. The nominal operating frequency for the ring-oscillator based Voltage Controlled Oscillator (VCO) is fVCO = 640MHz. The last sections deal with a fabricated demonstrator that provides the option of feeding the single-ended 80MHz output clock of the PLL as a clock signal to a digital test logic block integrated on-chip. The digital logic consists of an eight bit pseudo-random binary sequence generator, an eight bit to ten bit coder and a serializer. It processes data with a speed of 160 Mbit/s. All dynamic signals are driven off-chip by custommade pseudo-LVDS drivers

Belle II Technical Design Report

The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.Comment: Edited by: Z. Dole\v{z}al and S. Un