Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction

We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport calculations. For comparison we study the tunneling magneto-Seebeck effect in CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at room temperature. This result provides a sharp contrast to the magnetoresistance, which behaves oppositely for all barrier thicknesses and differs by one order of magnitude between devices. Here the magnetoresistance results from differences in transmission brought upon by changing the tunnel junction's magnetization configuration. The magneto-Seebeck effect results from variations in asymmetry of the energy-dependent transmission instead. We report that this difference in origin allows for CoPt|MgO|Pt to possess strong thermal magnetic-transport anisotropy.Comment: 6 pages, 6 figure

Partner selection in indoor-to-outdoor cooperative networks: an experimental study

In this paper, we develop a partner selection protocol for enhancing the network lifetime in cooperative wireless networks. The case-study is the cooperative relayed transmission from fixed indoor nodes to a common outdoor access point. A stochastic bivariate model for the spatial distribution of the fading parameters that govern the link performance, namely the Rician K-factor and the path-loss, is proposed and validated by means of real channel measurements. The partner selection protocol is based on the real-time estimation of a function of these fading parameters, i.e., the coding gain. To reduce the complexity of the link quality assessment, a Bayesian approach is proposed that uses the site-specific bivariate model as a-priori information for the coding gain estimation. This link quality estimator allows network lifetime gains almost as if all K-factor values were known. Furthermore, it suits IEEE 802.15.4 compliant networks as it efficiently exploits the information acquired from the receiver signal strength indicator. Extensive numerical results highlight the trade-off between complexity, robustness to model mismatches and network lifetime performance. We show for instance that infrequent updates of the site-specific model through K-factor estimation over a subset of links are sufficient to at least double the network lifetime with respect to existing algorithms based on path loss information only.Comment: This work has been submitted to IEEE Journal on Selected Areas in Communications in August 201

Cooperative Regions For Coded Cooperation Over Time-Varying Fading Channels

The performance analysis of coded cooperation has been mainly focused on two extreme cases of channel variability, i.e. the block-fading (BF) and the fast-fading (FF) model. In more practical propagation environments the fading correlation across time depends on the level of user mobility. This paper analyzes the effects of time-selective fading on the performance of coded cooperation by providing an analytical framework for the error rate evaluation as a function of the mobility degree of the mobile station (MS) and of the quality of the inter-MS channel. The purpose is to evaluate the conditions on the propagation settings where the additional exploitation of spatial diversity (when time-diversity is available) provided by cooperative transmission is able to enhance substantially the performance of the non-cooperative transmission. We show that coded cooperation can outperform the non-cooperative (coded and bit-interleaved) transmission only up to a certain degree of mobility. The cooperative region is defined as the collection of mobility settings for which coded cooperation can be regarded as a competitive strategy compared to non-cooperative transmission. Contrary to what has been previously shown for BF channels, we demonstrate that the inter-MS channel quality plays a key role in the definition of the cooperative region

Domain walls in (Ga,Mn)As diluted magnetic semiconductor

We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 nm to 120 nm. The domain walls are of the N\'eel type and evolve from near-$90^{\circ}$ walls at low-temperatures to large angle [1$\bar{1}$0]-oriented walls and small angle [110]-oriented walls at higher temperatures.Comment: 5 pages, 4 figure

Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures

We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.Comment: Submitted to Physical Review Letters. Updates version 1 to include a more detailed discussion of the effect of strain on the anisotropic magnetoresistanc

Low voltage control of ferromagnetism in a semiconductor p-n junction

The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state memories. The integration of these two distinct areas of microelectronics in one physical element, with a potentially major impact on the power consumption and scalability of future devices, requires to find efficient means for controlling magnetization electrically. Current induced magnetization switching phenomena represent a promising step towards this goal, however, they relay on relatively large current densities. The direct approach of controlling the magnetization by low-voltage charge depletion effects is seemingly unfeasible as the two worlds of semiconductors and metal ferromagnets are separated by many orders of magnitude in their typical carrier concentrations. Here we demonstrate that this concept is viable by reporting persistent magnetization switchings induced by short electrical pulses of a few volts in an all-semiconductor, ferromagnetic p-n junction.Comment: 11 pages, 4 figure

Experimental observation of the optical spin-orbit torque

Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have reported experimental observation of the optical counterpart of STT in which a circularly polarized pump laser pulse acts as the external polarizer, allowing to study and utilize the phenomenon on several orders of magnitude shorter timescales than in the electric current induced STT. Recently it has been theoretically proposed and experimentally demonstrated that in the absence of an external polarizer, carriers in a magnet under applied electric field can develop a non-equilibrium spin polarization due to the relativistic spin-orbit coupling, resulting in a current induced spin-orbit torque (SOT) acting on the magnetization. In this paper we report the observation of the optical counterpart of SOT. At picosecond time-scales, we detect excitations of magnetization of a ferromagnetic semiconductor (Ga,Mn)As which are independent of the polarization of the pump laser pulses and are induced by non-equilibrium spin-orbit coupled photo-holes.Comment: 4 figure, supplementary information. arXiv admin note: text overlap with arXiv:1101.104

Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment

We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a spin representation for their kinetic-exchange interaction with localised electrons on Mn ions, treated in the mean-field approximation. For epilayers with growth induced lattice-matching strains we study in-plane to out-of-plane easy-axis reorientations as a function of Mn local-moment concentration, hole concentration, and temperature. Next we focus on the competition of in-plane cubic and uniaxial anisotropies. We add an in-plane shear strain to the effective Hamiltonian in order to capture measured data in bare, unpatterned epilayers, and we provide microscopic justification for this approach. The model is then extended by an in-plane uniaxial strain and used to directly describe experiments with strains controlled by postgrowth lithography or attaching a piezo stressor. The calculated easy-axis directions and anisotropy fields are in semiquantitative agreement with experiment in a wide parameter range