In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C

We report an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2 which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 °C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 °C. The activation energy of the growth process is 0.8±0.1 eV

Superplastic forming of ceramic insulation

Superplasticity has been demonstrated in many fine-grained structural ceramics and ceramic composites, including yttria-stabilized tetragonal zirconia polycrystal (YTZP), alumina, and Al2O3-reinforced zirconia (Al2O3/YTZ) duplex composites and SiC-reinforced Si3N4. These superplastic ceramics obviously offer the potential benefit of forming net shape or near net shape parts. This could be particularly useful for forming complicated shapes that are difficult to achieve using conventional forming techniques, or require elaborate, subsequent machining. In the present study, we successfully demonstrated the following: (1) superplastic 3Y-TXP and 20 percent Al2O3/YTZ composite have for the first time been successfully deformed into hemispherical caps via a biaxial gas-pressure forming technique; (2) no experimental difficulty was encountered in applying the required gas pressures and temperatures to achieve the results, thus, it is certain that higher rates of deformation than those presented in this study will be possible by using the current test apparatus at higher temperatures and pressures; and (3) an analytical model incorporating material parameters, such as variations during forming in the strain rate sensitivity exponent and grain growth-induced strain hardening, is needed to model accurately and therefore precisely control the biaxial gas-pressure forming of superplastic ceramics. Based on the results of this study, we propose to fabricate zirconia insulation tubes by superplastic extrusion of zirconia polycrystal. This would not only reduce the cost, but also improve the reliability of the tube products

Thermal reaction of Al/Ti bilayers with contaminated interface

We have studied some new aspects of thermal reactions in Al/Ti bilayers in which the interface is purposely contaminated with oxygen. After annealing at a temperature of 460 °C, an Al_3Ti compound forms at the interface, moreover some Al diffuses through the Ti to form a compound at the free surface. The amount of aluminum at the free surface can be as large as at the interface. Nucleation and lateral growth of Al_3Ti at the interface are locally unfavorable. This results in a competition between the lateral growth of Al_3Ti at the Al/Ti interface and the diffusion of Al to the free surface. Once full coverage by Al_3Ti is obtained at the Al/Ti interface, the diffusion of Al to the surface becomes negligible

On the Foundation of Circular-Saw Stability Theory

The buckling and critical speed saw stability theories for predicting the flatness of a circular saw are discussed. Laboratory experiments were performed for evaluation of the stability concepts. The experiments include accurate measurement of the saw-disc natural frequencies or frequency spectrum and the measurement and inclusion of thermal effects in saw-disc stability analysis

Electron tunneling time measured by photoluminescence excitation correlation spectroscopy

The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 Å has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 Å (≈12 ps) to 34 Å(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes

Reply to the comment by D. Kreimer and E. Mielke

We respond to the comment by Kreimer et. al. about the torsional contribution to the chiral anomaly in curved spacetimes. We discuss their claims and refute its main conclusion.Comment: 9 pages, revte