76 research outputs found
Electrical observation of a tunable band gap in bilayer graphene nanoribbons at room temperature
We investigate the transport properties of double-gated bilayer graphene
nanoribbons at room temperature. The devices were fabricated using conventional
CMOS-compatible processes. By analyzing the dependence of the resistance at the
charge neutrality point as a function of the electric field applied
perpendicular to the graphene surface, we show that a band gap in the density
of states opens, reaching an effective value of ~sim50 meV. This demonstrates
the potential of bilayer graphene as FET channel material in a conventional
CMOS environment.Comment: 3 pages, 3 figure
Apparent rippling with honeycomb symmetry and tunable periodicity observed by scanning tunneling microscopy on suspended graphene
Suspended graphene is difficult to image by scanning probe microscopy due to
the inherent van-der-Waals and dielectric forces exerted by the tip which are
not counteracted by a substrate. Here, we report scanning tunneling microscopy
data of suspended monolayer graphene in constant-current mode revealing a
surprising honeycomb structure with amplitude of 50200 pm and lattice
constant of 10-40 nm. The apparent lattice constant is reduced by increasing
the tunneling current , but does not depend systematically on tunneling
voltage or scan speed . The honeycomb lattice of the rippling
is aligned with the atomic structure observed on supported areas, while no
atomic corrugation is found on suspended areas down to the resolution of about
pm. We rule out that the honeycomb structure is induced by the feedback
loop using a changing , that it is a simple enlargement effect of
the atomic resolution as well as models predicting frozen phonons or standing
phonon waves induced by the tunneling current. Albeit we currently do not have
a convincing explanation for the observed effect, we expect that our intriguing
results will inspire further research related to suspended graphene.Comment: 10 pages, 7 figures, modified, more detailed discussion on errors in
vdW parameter
Apparent rippling with honeycomb symmetry and tunable periodicity observed by scanning tunneling microscopy on suspended graphene
Suspended graphene is difficult to image by scanning probe microscopy due to the inherent van der Waals and dielectric forces exerted by the tip, which are not counteracted by a substrate. Here, we report scanning tunneling microscopy data of suspended monolayer graphene in constant-current mode, revealing a surprising honeycomb structure with amplitude of 50-200 pm and lattice constant of 10-40 nm. The apparent lattice constant is reduced by increasing the tunneling current I, but does not depend systematically on tunneling voltage V or scan speed v(scan). The honeycomb lattice of the rippling is aligned with the atomic structure observed on supported areas, while no atomic corrugation is found on suspended areas down to the resolution of about 3-4 pm. We rule out that the honeycomb structure is induced by the feedback loop using a changing vscan, that it is a simple enlargement effect of the atomic lattice, as well as models predicting frozen phonons or standing phonon waves induced by the tunneling current. Although we currently do not have a convincing explanation for the observed effect, we expect that our intriguing results will inspire further research related to suspended graphene
Electrical transport and low-temperature scanning tunneling microscopy of microsoldered graphene
Using the recently developed technique of microsoldering, we perform a
systematic transport study of the influence of PMMA on graphene flakes
revealing a doping effect of up to 3.8x10^12 1/cm^2, but a negligible influence
on mobility and gate voltage induced hysteresis. Moreover, we show that the
microsoldered graphene is free of contamination and exhibits a very similar
intrinsic rippling as has been found for lithographically contacted flakes.
Finally, we demonstrate a current induced closing of the previously found
phonon gap appearing in scanning tunneling spectroscopy experiments, strongly
non-linear features at higher bias probably caused by vibrations of the flake
and a B-field induced double peak attributed to the 0.Landau level of graphene.Comment: 8 pages, 3 figure
Non-volatile switching in graphene field effect devices
The absence of a band gap in graphene restricts its straight forward
application as a channel material in field effect transistors. In this letter,
we report on a new approach to engineer a band gap in graphene field effect
devices (FED) by controlled structural modification of the graphene channel
itself. The conductance in the FEDs is switched between a conductive "on-state"
to an insulating "off-state" with more than six orders of magnitude difference
in conductance. Above a critical value of an electric field applied to the FED
gate under certain environmental conditions, a chemical modification takes
place to form insulating graphene derivatives. The effect can be reversed by
electrical fields of opposite polarity or short current pulses to recover the
initial state. These reversible switches could potentially be applied to
non-volatile memories and novel neuromorphic processing concepts.Comment: 14 pages, 4 figures, submitted to IEEE ED
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
The unique property of bilayer graphene to show a band gap tunable by
external electrical fields enables a variety of different device concepts with
novel functionalities for electronic, optoelectronic and sensor applications.
So far the operation of bilayer graphene based field effect transistors
requires two individual gates to vary the channel's conductance and to create a
band gap. In this paper we report on a method to increase the on/off ratio in
single gated bilayer graphene field effect transistors by adsorbate doping. The
adsorbate dopants on the upper side of the graphene establish a displacement
field perpendicular to the graphene surface breaking the inversion symmetry of
the two graphene layers. Low temperature measurements indicate, that the
increased on/off ratio is caused by the opening of a mobility gap. Beside field
effect transistors the presented approach can also be employed for other
bilayer graphene based devices like photodetectors for THz to infrared
radiation, chemical sensors and in more sophisticated structures such as
antidot- or superlattices where an artificial potential landscape has to be
created.Comment: 4 pages, 4 figure
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