Simulations of Sisyphus cooling including multiple excited states

We extend the theory for laser cooling in a near-resonant optical lattice to include multiple excited hyperfine states. Simulations are performed treating the external degrees of freedom of the atom, i.e., position and momentum, classically, while the internal atomic states are treated quantum mechanically, allowing for arbitrary superpositions. Whereas theoretical treatments including only a single excited hyperfine state predict that the temperature should be a function of lattice depth only, except close to resonance, experiments have shown that the minimum temperature achieved depends also on the detuning from resonance of the lattice light. Our results resolve this discrepancy.Comment: 7 pages, 6 figure

On the Approximability of Digraph Ordering

Given an n-vertex digraph D = (V, A) the Max-k-Ordering problem is to compute a labeling $\ell : V \to [k]$ maximizing the number of forward edges, i.e. edges (u,v) such that $\ell$(u) < $\ell$(v). For different values of k, this reduces to Maximum Acyclic Subgraph (k=n), and Max-Dicut (k=2). This work studies the approximability of Max-k-Ordering and its generalizations, motivated by their applications to job scheduling with soft precedence constraints. We give an LP rounding based 2-approximation algorithm for Max-k-Ordering for any k={2,..., n}, improving on the known 2k/(k-1)-approximation obtained via random assignment. The tightness of this rounding is shown by proving that for any k={2,..., n} and constant $\varepsilon > 0$, Max-k-Ordering has an LP integrality gap of 2 - $\varepsilon$ for $n^{\Omega\left(1/\log\log k\right)}$ rounds of the Sherali-Adams hierarchy. A further generalization of Max-k-Ordering is the restricted maximum acyclic subgraph problem or RMAS, where each vertex v has a finite set of allowable labels $S_v \subseteq \mathbb{Z}^+$. We prove an LP rounding based $4\sqrt{2}/(\sqrt{2}+1) \approx 2.344$ approximation for it, improving on the $2\sqrt{2} \approx 2.828$ approximation recently given by Grandoni et al. (Information Processing Letters, Vol. 115(2), Pages 182-185, 2015). In fact, our approximation algorithm also works for a general version where the objective counts the edges which go forward by at least a positive offset specific to each edge. The minimization formulation of digraph ordering is DAG edge deletion or DED(k), which requires deleting the minimum number of edges from an n-vertex directed acyclic graph (DAG) to remove all paths of length k. We show that both, the LP relaxation and a local ratio approach for DED(k) yield k-approximation for any $k\in [n]$.Comment: 21 pages, Conference version to appear in ESA 201

Editorial : Current concepts and recent advances on pediatric appendicitis

Non peer reviewe

Hydrogen induced optically-active defects in silicon photonic nanocavities

This work was supported by Era-NET NanoSci LECSIN project coordinated by F. Priolo, by the Italian Ministry of University and Research, FIRB contract No. RBAP06L4S5 and by the EPSRC UKSp project. Partial financial support by the Norwegian Research Council is also acknowledged.We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.Publisher PDFPeer reviewe

Static Response Function for Longitudinal and Transverse Excitations in Superfluid Helium

The sum rule formalism is used to evaluate rigorous bounds for the density and current static response functions in superfluid helium at zero temperature. Both lower and upper bounds are considered. The bounds are expressed in terms of ground state properties (density and current correlation funtions) and of the interatomic potential. The results for the density static response significantly improve the Feynman approximation and turn out to be close to the experimental (neutron scattering) data. A quantitative prediction for the transverse current response is given. The role of one-phonon and multi-particle excitations in the longitudinal and transverse channels is discussed. (Phys.Rev.B, in press)Comment: 19 pages (plain TeX) and 3 Figures (postscript), UTF-26

Results of matching valve and root repair to aortic valve and root pathology

ObjectiveFor patients with aortic root pathology and aortic valve regurgitation, aortic valve replacement is problematic because no durable bioprosthesis exists, and mechanical valves require lifetime anticoagulation. This study sought to assess outcomes of combined aortic valve and root repair, including comparison with matched bioprosthesis aortic valve replacement.MethodsFrom November 1990 to January 2005, 366 patients underwent modified David reimplantation (n = 72), root remodeling (n = 72), or valve repair with sinotubular junction tailoring (n = 222). Active follow-up was 99% complete, with a mean of 5.6 ± 4.0 years (maximum 17 years); follow-up for vital status averaged 8.5 ± 3.6 years (maximum 19 years). Propensity-adjusted models were developed for fair comparison of outcomes.ResultsThirty-day and 5-, 10-, and 15-year survivals were 98%, 86%, 74%, and 58%, respectively, similar to that of the US matched population and better than that after bioprosthesis aortic valve replacement. Propensity-score–adjusted survival was similar across procedures (P > .3). Freedom from reoperation at 30 days and 5 and 10 years was 99%, 92%, and 89%, respectively, and was similar across procedures (P > .3) after propensity-score adjustment. Patients with tricuspid aortic valves were more likely to be free of reoperation than those with bicuspid valves at 10 years (93% vs 77%, P = .002), equivalent to bioprosthesis aortic valve replacement and superior after 12 years. Bioprostheses increasingly deteriorated after 7 years, and hazard functions for reoperation crossed at 7 years.ConclusionsValve preservation (rather than replacement) and matching root procedures have excellent early and long-term results, with increasing survival benefit at 7 years and fewer reoperations by 12 years. We recommend this procedure for experienced surgical teams

Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress

Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B segregation during growth shows that: i) for layers in epitaxy on (100)Si), B segregation decreases with increasing Ge concentration, i.e. with increased compressive stress, ii) for unstressed layers, B segregation increases with Ge concentration, iii) at constant Ge concentration, B segregation increases for layers in tension and decreases for layers in compression. The contrasting behaviors observed as a function of Ge concentration in compressively stressed and unstressed layers can be explained by an increase of the equilibrium segregation driving force induced by Ge additions and an increase of near-surface diffusion in compressively stressed layers. Analysis of lattice diffusion shows that: i) in unstressed layers, B lattice diffusion coefficient decreases with increasing Ge concentration, ii) at constant Ge concentration, the diffusion coefficient of B decreases with compressive biaxial stress and increases with tensile biaxial stress, iii) the volume of activation of B diffusion () is positive for biaxial stress while it is negative in the case of hydrostatic pressure. This confirms that under a biaxial stress the activation volume is reduced to the relaxation volume

Electronic structure and optical properties of ZnX (X=O, S, Se, Te)

Electronic band structure and optical properties of zinc monochalcogenides with zinc-blende- and wurtzite-type structures were studied using the ab initio density functional method within the LDA, GGA, and LDA+U approaches. Calculations of the optical spectra have been performed for the energy range 0-20 eV, with and without including spin-orbit coupling. Reflectivity, absorption and extinction coefficients, and refractive index have been computed from the imaginary part of the dielectric function using the Kramers--Kronig transformations. A rigid shift of the calculated optical spectra is found to provide a good first approximation to reproduce experimental observations for almost all the zinc monochalcogenide phases considered. By inspection of the calculated and experimentally determined band-gap values for the zinc monochalcogenide series, the band gap of ZnO with zinc-blende structure has been estimated.Comment: 17 pages, 10 figure

Phonons in random alloys: the itinerant coherent-potential approximation

We present the itinerant coherent-potential approximation(ICPA), an analytic, translationally invariant and tractable form of augmented-space-based, multiple-scattering theory in a single-site approximation for harmonic phonons in realistic random binary alloys with mass and force-constant disorder. We provide expressions for quantities needed for comparison with experimental structure factors such as partial and average spectral functions and derive the sum rules associated with them. Numerical results are presented for Ni_{55} Pd_{45} and Ni_{50} Pt_{50} alloys which serve as test cases, the former for weak force-constant disorder and the latter for strong. We present results on dispersion curves and disorder-induced widths. Direct comparisons with the single-site coherent potential approximation(CPA) and experiment are made which provide insight into the physics of force-constant changes in random alloys. The CPA accounts well for the weak force-constant disorder case but fails for strong force-constant disorder where the ICPA succeeds.Comment: 19 pages, 12 eps figures, uses RevTex