Graphene Spin Transistor

Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have very long spin-scattering times. In addition, spin injection and detection in graphene opens new opportunities to study exotic electronic states such as the quantum Hall[10,11] and quantum spin Hall[9] states, and spin-polarized edge states[12] in graphene ribbons. Here we perform the first non-local four-probe experiments[13] on graphene contacted by ferromagnetic Permalloy electrodes. We observe sharp switching and often sign-reversal of the non-local resistance at the coercive field of the electrodes, indicating definitively the presence of a spin current between injector and detector. The non-local resistance changes magnitude and sign quasi-periodically with back-gate voltage, and Fabry-Perot-like oscillations[6,14,15] are observed, consistent with quantum-coherent transport. The non-local resistance signal can be observed up to at least T = 300 K

Simulating Problem Difficulty in Arithmetic Cognition Through Dynamic Connectionist Models

The present study aims to investigate similarities between how humans and connectionist models experience difficulty in arithmetic problems. Problem difficulty was operationalized by the number of carries involved in solving a given problem. Problem difficulty was measured in humans by response time, and in models by computational steps. The present study found that both humans and connectionist models experience difficulty similarly when solving binary addition and subtraction. Specifically, both agents found difficulty to be strictly increasing with respect to the number of carries. Another notable similarity is that problem difficulty increases more steeply in subtraction than in addition, for both humans and connectionist models. Further investigation on two model hyperparameters --- confidence threshold and hidden dimension --- shows higher confidence thresholds cause the model to take more computational steps to arrive at the correct answer. Likewise, larger hidden dimensions cause the model to take more computational steps to correctly answer arithmetic problems; however, this effect by hidden dimensions is negligible.Comment: 7 pages; 15 figures; 5 tables; Published in the proceedings of the 17th International Conference on Cognitive Modelling (ICCM 2019

Charge Transport and Inhomogeneity near the Charge Neutrality Point in Graphene

The magnetic field-dependent longitudinal and Hall components of the resistivity rho_xx(H) and rho_xy(H) are measured in graphene on silicon dioxide substrates at temperatures from 1.6 K to room temperature. At charge densities near the charge-neutrality point rho_xx(H) is strongly enhanced and rho_xy(H) is suppressed, indicating nearly equal electron and hole contributions to the transport current. The data are inconsistent with uniformly distributed electron and hole concentrations (two-fluid model) but in excellent agreement with the recent theoretical prediction for inhomogeneously distributed electron and hole regions of equal mobility. At low temperatures and high magnetic fields rho_xx(H) saturates to a value ~h/e^2, with Hall conductivity << e^2/h, which may indicate a regime of localized v = 2 and v = -2 quantum Hall puddles

Symmetry Protected Josephson Supercurrents in Three-Dimensional Topological Insulators

Coupling the surface state of a topological insulator (TI) to an s-wave superconductor is predicted to produce the long-sought Majorana quasiparticle excitations. However, superconductivity has not been measured in surface states when the bulk charge carriers are fully depleted, i.e., in the true topological regime that is relevant for investigating Majorana modes. Here, we report measurements of DC Josephson effects in TI-superconductor junctions as the chemical potential is moved from the bulk bands into the band gap, or through the true topological regime characterized by the presence of only surface currents. We examine the relative behavior of the system at different bulk/surface ratios, determining the effects of strong bulk/surface mixing, disorder, and magnetic field. We compare our results to 3D quantum transport simulations to conclude that the supercurrent is largely carried by surface states, due to the inherent topology of the bands, and that it is robust against disorder

Carrier transport mechanisms of hybrid ZnO nanorod-polymer LEDs

A hybrid polymer-nanorod (NR) light-emitting diode (LED), consisting of a hole-conducting polymer poly (9-vinyl carbazole) (PVK) and ZnO nanorod (NR) composite, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/(PVK + ZnO nanorods)/Al is fabricated through a simple spin coating technique. TEM images shows inhomogeneous deposition and the agglomeration of ZnO NRs, which is explained through their low probability of adsorption on PVK due to two-dimensional structural property. In the current-voltage characteristics, negative differential resistance (NDR) phenomenon is observed corresponding to device structure without ZnO NRs. The carrier transport behavior in the LED device is well described by both ohmic and space-chargelimited-current (SCLC) mechanisms. Broad blue electroluminescence (EL) consisting of two sub peaks, are centered at 441 nm and the other at 495 nm, is observed, which indicates that the ZnO nanorod play a role as a recombination center for excitons. The red shift in the position of the EL compared to that photoluminescence is well explained through band offsets at the heterojunction between the PVK and ZnO NRs

Comparison of First-Line Dual Combination Treatments in Hypertension: Real-World Evidence from Multinational Heterogeneous Cohorts.

Background and objectives: 2018 ESC/ESH Hypertension guideline recommends 2-drug combination as initial anti-hypertensive therapy. However, real-world evidence for effectiveness of recommended regimens remains limited. We aimed to compare the effectiveness of first-line anti-hypertensive treatment combining 2 out of the following classes: angiotensin-converting enzyme (ACE) inhibitors/angiotensin-receptor blocker (A), calcium channel blocker (C), and thiazide-type diuretics (D).Methods: Treatment-naïve hypertensive adults without cardiovascular disease (CVD) who initiated dual anti-hypertensive medications were identified in 5 databases from US and Korea. The patients were matched for each comparison set by large-scale propensity score matching. Primary endpoint was all-cause mortality. Myocardial infarction, heart failure, stroke, and major adverse cardiac and cerebrovascular events as a composite outcome comprised the secondary measure.Results: A total of 987,983 patients met the eligibility criteria. After matching, 222,686, 32,344, and 38,513 patients were allocated to A+C vs. A+D, C+D vs. A+C, and C+D vs. A+D comparison, respectively. There was no significant difference in the mortality during total of 1,806,077 person-years: A+C vs. A+D (hazard ratio [HR], 1.08; 95% confidence interval [CI], 0.97-1.20; p=0.127), C+D vs. A+C (HR, 0.93; 95% CI, 0.87-1.01; p=0.067), and C+D vs. A+D (HR, 1.18; 95% CI, 0.95-1.47; p=0.104). A+C was associated with a slightly higher risk of heart failure (HR, 1.09; 95% CI, 1.01-1.18; p=0.040) and stroke (HR, 1.08; 95% CI, 1.01-1.17; p=0.040) than A+D.Conclusions: There was no significant difference in mortality among A+C, A+D, and C+D combination treatment in patients without previous CVD. This finding was consistent across multi-national heterogeneous cohorts in real-world practice

Insulating behavior in ultra-thin bismuth selenide field effect transistors

Ultrathin (~3 quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si susbtrates. Temperature- and gate-voltage dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type, and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV