Highly sensitive InGaAs=InAlAs quantum wire photo-FET

An InGaAs=InAlAs quantum wire photo-FET has been fabricated on a V-grooved (311) InP substrate by atomic hydrogen assisted molecular beam epitaxy. The room-temperature photosensitivity of the quantum wire photo-FET reached 350 kA=W near a wavelength of 700 nm at a drain-source voltage of 1 V. Introduction: The pin diode is the simplest of the commercially available photodetectors in terms of device structure and is suitable for application to a detector array. However, its sensitivity is limited to about 1 A=W, which is the quantum efficiency of the photo-absorption material. In such a case, the detection limit is determined by the additional electronic noise induced by the current amplifier. In contrast, an avalanche photodiode (APD) and a photo-multiplier (PMT) have higher sensitivity because of their amplification mechanism, but they are not very suitable for multi-pixel arrays because of their inferior uniformity and higher bias voltage. The bias voltages of an APD ($100 V) and a PMT ($1 kV) may easily damage a silicon charge amplifier within the same package if the element breaks down. A phototransistor is a good candidate for a highly sensitive photodetector. In a metal oxide semiconductor field effect transistor (MOSFET), photo-generated carriers are accumulated underneath the gate region and modulate the majority current. This device is called a photo-MOSFET and it is widely used for optically isolated relays and image sensors. Compound semiconductor materials are essential if we are to extend the spectral range and sensitivity of photodetectors by flexibly designing the bandgap profile and achieving high carrier mobility. It is reported that high electron mobility transistors (HEMTs) have a responsivity of about 3 kA=W as a photodetecto

Contribution of the nucleon-hyperon reaction channels to K−^- production in proton-nucleus collisions

The cross sections for producing K$^-$ mesons in nucleon-hyperon elementary processes are estimated assuming one-pion exchange and using the experimentally known pion-hyperon cross sections. The results are implemented in a transport model which is applied to calculation of proton-nucleus collisions. In significant difference to earlier estimates for heavy-ion collisions the inclusion of the nucleon-hyperon cross section roughly doubles the K$^-$ production in near-threshold proton-nucleus collisions

Cross-Field Plasma Acceleration and Potential Formation Induced by Electromagnetic Waves in a Relativistic Magnetized Plasma

Abstract It has been proved theoretically that particle acceleration along and across a magnetic field and electric field across a magnetic field can be induced by nonlinear Landau damping of almost perpendicularly propagating electrostatic waves in a relativistic magnetized plasma

Effects of abscisic acid treatment and night temperatures on anthocyanin composition in Pinot noir grapes

Potted Pinot noir grapevines were grown under continuous high temperature (30 °C) or low night (15 °C) and high day (30 °C) temperatures after veraison. Half of the total number of clusters of each vine was sprayed with 250 ppm abscisic acid (ABA) at veraison. Anthocyanin accumulation in berry skins grown under high night temperatures was lower than that in berries grown under low night temperatures. HPLC analysis showed that the ratios of delphinidin-3-glucoside, cyanidin-3-glucoside and petunidin-3-glucoside to the total anthocyanin content were greatly reduced under high night temperatures. ABA treatment enhanced anthocyanin accumulation under high night temperatures to almost the same level as under low night temperatures; the ratio of each anthocyanin to the total anthocyanin, however, was not affected by ABA treatment.

Measuring Temperature Gradients over Nanometer Length Scales

When a quantum dot is subjected to a thermal gradient, the temperature of electrons entering the dot can be determined from the dot's thermocurrent if the conductance spectrum and background temperature are known. We demonstrate this technique by measuring the temperature difference across a 15 nm quantum dot embedded in a nanowire. This technique can be used when the dot's energy states are separated by many kT and will enable future quantitative investigations of electron-phonon interaction, nonlinear thermoelectric effects, and the effciency of thermoelectric energy conversion in quantum dots.Comment: 6 pages, 5 figure