Topological Hunds rules and the electronic properties of a triple lateral quantum dot molecule

We analyze theoretically and experimentally the electronic structure and charging diagram of three coupled lateral quantum dots filled with electrons. Using the Hubbard model and real-space exact diagonalization techniques we show that the electronic properties of this artificial molecule can be understood using a set of topological Hunds rules. These rules relate the multi-electron energy levels to spin and the inter-dot tunneling $t$, and control charging energies. We map out the charging diagram for up to N=6 electrons and predict a spin-polarized phase for two holes. The theoretical charging diagram is compared with the measured charging diagram of the gated triple-dot device.Comment: 31 pages, 7 figures, accepted to March 15, 2007 issue of Phys. Rev. B, vol. 7

Stability Diagram of a Few-Electron Triple Dot

Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and tunable coupling. We experimentally map out for the first time the stability diagram of the triatomic system and reveal the existence of quadruple points, a signature of the three dots being in resonance. In their vicinity we observe a surprising effect, a 'cloning' of charge transfer transitions related to charge and spin reconfigurations. The experimental results are reproduced by equivalent circuit analysis and Hubbard models

Detection of Single Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic Force Microscopy

Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single electron tunneling between the dot and the back electrode governed by Coulomb blockade effect, and are consistent with a model based on the free energy of the system. The observed phenomenon may be regarded as the ``force version'' of the Coulomb blockade effect.Comment: 4 pages, 4 figure

Landau-Zener-Stuckelberg-Majorana interferometry of a single hole

We perform Landau-Zener-Stuckelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. In analogy to the electron systems, at magnetic field B=0 and high modulation frequencies we observe the photon-assisted tunneling (PAT) between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flipping interdot tunneling channel, introducing a distinct interference pattern at finite B. Magneto-transport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin-conserving and spin-flipping, which form closed loops at critical magnetic fields. In one such loop an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.Comment: 6 pages, 4 figures, and supplementary materia

Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas

We report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (mu=20x10^6 cm^2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional differential resistivity map as a function of magnetic field (up to 250 mT) and DC current. This map, which resembles a phase diagram, demarcate distinct regions dominated by Shubnikov-de Haas (SdH) oscillations (and phase inversion of these oscillations) around zero DC current; negative magnetoresistance and a double-peak feature (both ballistic in origin) around zero field; and Hall field-induced resistance oscillations (HIROs) radiating out from the origin. From a detailed analysis of the data near zero field, we show that increasing the DC current suppresses the electron-electron scattering length that drives a growing hydrodynamic contribution to both the differential longitudinal and transverse (Hall) resistivities. Our approach to induce hydrodynamics with DC current differs from the more usual approach of changing the temperature. We also find a significant (factor of two to four) difference between the quantum lifetime extracted from SdH oscillations, and the quantum lifetime extracted from HIROs. In addition to observing HIRO peaks up to the seventh order, we observe an unexpected HIRO-like feature close to mid-way between the first-order and the second-order HIRO maxima at high DC current

Electron Beam Processing of Biological Objects and Materials

The research explores a wide range of applications for electron accelerators in industrial irradiation processing. It also compares the physical properties of electron beams, dose ranges, and methods used for irradiation of polymers, medical items, transplantology objects, pharmaceuticals, and foods. Moreover, the study discusses the depth dose non-uniformity in objects irradiated with accelerated electrons. The research also highlights the dependency of geometry, density, and chemical composition of the object on the dose distribution. Another focus of the study is computer simulation of electron irradiation method, encompassing all physical and technical parameters to assess the dose distribution throughout the irradiated objects, since without knowing the precise electron beam spectrum, it is impossible to accurately reconstruct the dose distribution throughout the objects. Considering that the beam spectrum cannot always be identified, especially for industrial accelerators, the study presents algorithm for reconstructing the dose distribution in irradiated objects. The final part of the research provides methods for increasing the dose uniformity throughout objects irradiated with electron beams

Holes outperform electrons in group IV semiconductor materials

A record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in superior monocrystalline quality of the s‐Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s‐Ge appears to be ≈2 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective g*‐factor (>18), a very low percolation density (5 × 109 cm−2) and a small effective mass (0.054 m 0). This long‐sought combination of parameters in one material system is important for the research and development of low‐temperature electronics with reduced Joule heating and for quantum‐electronics circuits based on spin qubits

Coherent transport through a quadruple point in a few electron triple quantum dot

A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experiments have been performed on this device. In this short paper we present data and confirm that transport is coherent by observing a \ucf\u20ac phase shift in magneto-conductance oscillations as one passes through the quadruple point.NRC publication: Ye

Selective growth of InP/InGaAs <0 1 0> ridges: Physical and optical characterization

NRC publication: Ye