Development and characterization of high-frequency sources for supersonic beams of fluorine radicals

We present and compare two high-pressure, high-frequency electric-discharge sources for the generation of supersonic beams of fluorine radicals. The sources are based on dielectric-barrier-discharge (DBD) and plate-discharge units attached to a pulsed solenoid valve. The corrosion-resistant discharge sources were operated with fluorine gas seeded in helium up to backing pressures as high as 30 bar. We employed a (3+1) resonance-enhanced multiphoton ionization combined with velocity-map imaging for the optimization, characterization and comparison of the fluorine beams. Additionally, universal femtosecond-laser-ionization detection was used for the characterization of the discharge sources at experimental repetition rates up to 200 Hz. Our results show that the plate discharge is more efficient in F$_{2}$ dissociation than the DBD by a factor of 8-9, whereas the DBD produces internally colder fluorine radicals.Comment: 6 pages, 7 figure

Conformational and state-specific effects in reactions of 2,3-dibromobutadiene with Coulomb-crystallized calcium ions

Recent advances in experimental methodology enabled studies of the quantum-state- and conformational dependence of chemical reactions under precisely controlled conditions in the gas phase. Here, we generated samples of selected gauche and s-trans 2,3-dibromobutadiene (DBB) by electrostatic deflection in a molecular beam and studied their reaction with Coulomb crystals of laser-cooled Ca + ions in an ion trap. The rate coefficients for the total reaction were found to strongly depend on both the conformation of DBB and the electronic state of Ca + . In the (4p) 2 P 1/2 and (3d) 2 D 3/2 excited states of Ca + , the reaction is capture-limited and faster for the gauche conformer due to long-range ion-dipole interactions. In the (4s) 2 S 1/2 ground state of Ca + , the reaction rate for s-trans DBB still conforms with the capture limit, while that for gauche DBB is strongly suppressed. The experimental observations were analysed with the help of adiabatic capture theory, ab initio calculations and reactive molecular dynamics simulations on a machine-learned full-dimensional potential energy surface of the system. The theory yields near-quantitative agreement for s-trans -DBB, but overestimates the reactivity of the gauche -conformer compared to the experiment. The present study points to the important role of molecular geometry even in strongly reactive exothermic systems and illustrates striking differences in the reactivity of individual conformers in gas-phase ion-molecule reactions

Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond

Substrates comprising heteroepitaxially grown single-crystalline diamond epilayers were used to fabricate pseudovertical Schottky diodes. These consisted of Ti/Pt/Au contacts on p− Boron-doped diamond (BDD) layers (1015–1016 cm−3) with varying thicknesses countered by ohmic contacts on underlying p+ layers (1019–1020 cm−3) on the quasi-intrinsic diamond starting substrate. Whereas the forward current exhibited a low-voltage shunt conductance and, for higher voltages, thermionic emission behavior with systematic dependence on the p− film thickness, the reverse leakage current appeared to be space-charge-limited depending on the existence of local channels and thus local defects, and depending less on the thickness. For the Schottky barriers ϕSB, a systematic correlation to the ideality factors n was observed, with an “ideal” n = 1 Schottky barrier of ϕSB = 1.43 eV. For the best diodes, the breakdown field reached 1.5 MV/cm

Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond

Substrates comprising heteroepitaxially grown single-crystalline diamond epilayers were used to fabricate pseudovertical Schottky diodes. These consisted of Ti/Pt/Au contacts on p− Boron-doped diamond (BDD) layers (1015–1016 cm−3) with varying thicknesses countered by ohmic contacts on underlying p+ layers (1019–1020 cm−3) on the quasi-intrinsic diamond starting substrate. Whereas the forward current exhibited a low-voltage shunt conductance and, for higher voltages, thermionic emission behavior with systematic dependence on the p− film thickness, the reverse leakage current appeared to be space-charge-limited depending on the existence of local channels and thus local defects, and depending less on the thickness. For the Schottky barriers ϕSB, a systematic correlation to the ideality factors n was observed, with an “ideal” n = 1 Schottky barrier of ϕSB = 1.43 eV. For the best diodes, the breakdown field reached 1.5 MV/cm

Understanding Interfaces in AlScN/GaN Heterostructures

International audienceAbstract Aluminum scandium nitride barrier layers increase the available sheet charge carrier density in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of high‐frequency amplifiers and high voltage switches. Growth of AlScN by metal‐organic chemical vapor deposition is challenging due to the low vapor pressure of the conventional Sc precursor Cp 3 Sc, which induces low growth rates of AlScN and leads to thermally‐induced AlScN/GaN‐interface degradation. In this work, novel Sc precursors are employed to reduce the thermal budget by increasing the growth rate of the AlScN layer. The AlScN/GaN interfaces are investigated by high‐resolution X‐ray diffraction, high‐resolution transmission electron microscopy, time‐of‐flight secondary ion mass spectrometry, capacitance–voltage, current–voltage and temperature‐dependent Hall measurements. Linearly graded interlayers with strain‐induced stacking faults, edge, and screw dislocations form at the AlScN/GaN interface at growth rates of 0.015 nms −1 . Growth rates of 0.034 nms −1 and higher allow for abrupt interfaces, but a compositional grading in the barrier remains. Homogeneous barrier layers can be achieved at growth rates of 0.067 nms −1 or by growing an AlN interlayer. The electrical properties of the heterostructures are sensitive to Sc accumulations at the cap/barrier interface, residual impurities from precursor synthesis, and surface roughness. This study paves the way for high‐performing devices