The quasi-free-standing nature of graphene on H-saturated SiC(0001)

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".Comment: 3 pages, 3 figures, accepted for publication in Applied Physics Letter

Effective temperatures of a heated Brownian particle

We investigate various possible definitions of an effective temperature for a particularly simple nonequilibrium stationary system, namely a heated Brownian particle suspended in a fluid. The effective temperature based on the fluctuation dissipation ratio depends on the time scale under consideration, so that a simple Langevin description of the heated particle is impossible. The short and long time limits of this effective temperature are shown to be consistent with the temperatures estimated from the kinetic energy and Einstein relation, respectively. The fluctuation theorem provides still another definition of the temperature, which is shown to coincide with the short time value of the fluctuation dissipation ratio

Probability density functions of work and heat near the stochastic resonance of a colloidal particle

We study experimentally and theoretically the probability density functions of the injected and dissipated energy in a system of a colloidal particle trapped in a double well potential periodically modulated by an external perturbation. The work done by the external force and the dissipated energy are measured close to the stochastic resonance where the injected power is maximum. We show a good agreement between the probability density functions exactly computed from a Langevin dynamics and the measured ones. The probability density function of the work done on the particle satisfies the fluctuation theorem

Irreversible effects of memory

The steady state of a Langevin equation with short ranged memory and coloured noise is analyzed. When the fluctuation-dissipation theorem of second kind is not satisfied, the dynamics is irreversible, i.e. detailed balance is violated. We show that the entropy production rate for this system should include the power injected by ``memory forces''. With this additional contribution, the Fluctuation Relation is fairly verified in simulations. Both dynamics with inertia and overdamped dynamics yield the same expression for this additional power. The role of ``memory forces'' within the fluctuation-dissipation relation of first kind is also discussed.Comment: 6 pages, 1 figure, publishe

Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

The effect of Ga/N flux ratio on surface morphology, incorporation of point defects and electrical transport properties of GaN films grown by plasma-assisted molecular beam epitaxy in a recently developed high-temperature growth regime was investigated. The homoepitaxial (0001) GaN films grown at ∼780–790 °C showed smoothest morphologies near the cross-over between N-rich and Ga-rich growth(0.75<Ga/N<1.1) contrasting previous observations for low-temperature growth. The higher-quality growth near Ga/N∼1 resulted from lower thermal decomposition rates and was corroborated by slightly lower Ga vacancy concentrations [VGa], lower unintentional oxygen incorporation, and improved electron mobilities. The consistently low [VGa], i.e., ∼10exp16 cm−3 for all films attribute further to the significant benefits of the high-temperature growth regime.Peer reviewe

Current-Induced Spin Polarization in Gallium Nitride

Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2*. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization (CISP) is observed in the material at temperatures of up to 200 K.Comment: 16 pages, 3 figure

Linear response theory and transient fluctuation theorems for diffusion processes: a backward point of view

On the basis of perturbed Kolmogorov backward equations and path integral representation, we unify the derivations of the linear response theory and transient fluctuation theorems for continuous diffusion processes from a backward point of view. We find that a variety of transient fluctuation theorems could be interpreted as a consequence of a generalized Chapman-Kolmogorov equation, which intrinsically arises from the Markovian characteristic of diffusion processes

The Contribution of Participatory Research: On-Farm Research

Participatory research in agriculture may range from research and technology development (R&D), carried out on a research station with some involvement of farmers, through to genuine participatory research involving researchers and farmers working together. The latter involves the end-user in actually carrying out aspects of the research and/or in the development and evaluation of technology that is appropriate to commercial enterprises. Researchers often question the validity of the ‘findings of on-farm participatory research’ as they are more comfortable with the ‘controlled’ environment of the research station. However if research is to be applied appropriately on farms, it must go through a period of evaluation on-farm. This paper summarises perspectives relating to participatory on-farm research, highlighting some opportunities that new technology is providing by considering five key areas as follows: • Participatory research within the agricultural research enterprise (current situation); • On-farm research compared with in-station research (options); • A New Zealand example of on-farm research; • New opportunities in on-farm research; • Future models for participatory on-farm research

The Origin of Presolar Silica Grains in AGB Stars

We have found two presolar silica grains in ALH A77307, which exhibit excesses in 17O but are normal in 18O. Silicon-oxide grains probably form during rapid cooling under non-equilibrium conditions in O-rich AGB stars with low Mg/Si ratios.This work was supported by NASA grants NNX07AU8OH, NNX08AI13G and NNXO7AI82G