85 research outputs found
Precision determination of band offsets in strained InGaAs/GaAs quantum wells by C-V-profiling and Schroedinger-Poisson self-consistent simulation
The results of measurements and numerical simulation of charge carrier
distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs
(0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction
band offsets for these pseudomorphic QWs have been obtained by means of
self-consistent solution of Schroedinger and Poisson equations and following
fitting to experimental data. For the conduction band offsets in strained
In_xGa_{1-x}As/GaAs - QWs the expression DE_C(x) = 0.814x - 0.21x^2 has been
obtained.Comment: 9 pages, 12 figures, RevTeX
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