Growth of epitaxial nanowires by controlled coarsening of strained islands

We show that elongated nanowires can be grown on crystal surfaces by allowing large strained two-dimensional islands to desorb by varying the adatom supersaturation or chemical potential. The width of the wires formed in this process is determined by a competition between the repulsive elastic interactions of the long edges of the wires and the thermodynamic driving force which tends to decrease the distance between these edges. The proposed mechanism allows for control of the wire sizes by changing the growth conditions, in particular, the vapor pressure of the material that is being deposited

On the energetic origin of self-limiting trenches formed around Ge/Si quantum dots

At high growth temperatures, the misfit strain at the boundary of Ge quantum dots on Si(001) is relieved by formation of trenches around the base of the islands. The depth of the trenches has been observed to saturate at a level that depends on the base-width of the islands. Using finite element simulations, we show that the self-limiting nature of trench depth is due to a competition between the elastic relaxation energy gained by the formation of the trench and the surface energy cost for creating the trench. Our simulations predict a linear increase of the trench depth with the island radius, in quantitative agreement with the experimental observations of Drucker and coworkers

Strain induced stabilization of stepped Si and Ge surfaces near (001)

We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of ``hut''-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain.Comment: to appear in Appl. Phys. Lett.; v2=minor corrections,figs resize

The atomistic structure and energy of nascent dislocation loops

An harmonic lattice theory is used, in conjunction with Mura's theory of eigendistorsions, to study the structure and energetics of nascent dislocation loops in face-centred-cubic (FCC) crystals. An analytical expression for the activation energies of such loops is derived. The results obtained herein indicate that thermal activation of small dislocation loops is possible at high stress levels such as those found in the vicinity of a crack tip. The implications of these results in understanding phenomena such as the brittle-ductile transition are discussed

Quasicontinuum Models of Interfacial Structure and Deformation

Microscopic models of the interaction between grain boundaries (GBs) and both dislocations and cracks are of importance in understanding the role of microstructure in altering the mechanical properties of a material. A recently developed mixed atomistic and continuum method is extended to examine the interaction between GBs, dislocations and cracks. These calculations elucidate plausible microscopic mechanisms for these defect interactions and allow for the quantitative evaluation of critical parameters such as the stress to nucleate a dislocation at a step on a GB and the force needed to induce GB migration.Comment: RevTex, 4 pages, 4 figure

Possible ferro-spin nematic order in NiGa2S4

We explore the possibility that the spin-1 triangular lattice magnet NiGa2 S4 may have a ferro-nematic ground state with no frozen magnetic moment but a uniform quadrupole moment. Such a state may be stabilized by biquadratic spin interactions. We describe the physical properties of this state and suggest experiments to help verify this proposal. We also contrast this state with a `non-collinear' nematic state proposed earlier by Tsunetsugu and Arikawa for NiGa2S4

A NEW HIGH PERFORMANCE THIN LAYER CHROMATOGRAPHIC METHOD DEVELOPMENT AND VALIDATION OF DAPAGLIFLOZIN IN BULK AND TABLET DOSAGE FORM

ABSTRACT Objective: To develop a new simple, selective and precise high-performance thin layer chromatographic method for determination of Dapagliflozin (DAPA) in bulk and tablet dosage form Methods: The present study describes development and validation of High performance thin layer chromatographic method for DAPA. The chromatographic separation was carried out on Merck precoated silica gel aluminium plate 60 F254 using Chloroform: Methanol (9:1v/v) as mobile phase. Quantitative determination of drug was carried out by densitometric scanning of plates at 223 nm using Camag TLC Scanner. Results: The chromatographic condition shows compact band with the retention factor for dapaglifloxin as 0.21 ± 0.004. The method was validated as per ICH guidelines for linearity, accuracy, precision and robustness. Response was found to be linear in the concentration range of 400 ng/ band to 1200 ng/band with linear regression value of 0.9953 with respect to peak area and concentration value The LOD and LOQ was found to be 1.2083 ng/band and 3.6616ng/ band. The percentage assay was found to be 100±0.05. Conclusion: This method under statistical analysis proved a selective, repeatable and accurate analysis of the drug. This method can be used for quantitative analysis of dapaglifloxin in the bulk drug and in tablet.   &nbsp