Visible Photoluminescence from Low Temperature deposited hydrogenated amorphous silicon nitride

Cataloged from PDF version of article.Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (Sill4), nitrogen and ammonia (NH3). Most films exhibit visible photoluminescence (PL) and some emit strong PL after annealing. While films grown without NH 3 exhibit PL in the deep red, those grown with NH 3 show PL in the green. The PL properties of these films with no oxygen (O) content are similar to those of silicon oxide (SiO x) films and porous Si. Using infrared and X-ray Photoelectron Spectroscopy, we suggest that PL from a-SiNx:H films originate from Si clusters which form during PECVD and crystallize upon annealing. We propose that the presence of O is not necessary for efficient PL

Quarter wave Fresnel rhomb with colinear output beam

A standard quarter wave (λ/4) Fresnel rhomb laterally displaces the output beam with respect to the input beam. This lateral displacement can cause problems when inserting the rhomb in an already aligned optical setup. This note describes the use of two λ/8 rhombs to construct a λ/4 rhomb. The output of the proposed rhomb is colinear with the input beam, and allows a much more flexible optical alignment

Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green far the samples grown with ammonia. In the Fabry-Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride - air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a colot flat panel display, a resonant cavity enhanced light emitting diode, or a laser

Visible photoluminescence from planar amorphous silicon nitride microcavities

Fabry-Perot microcavities were used for the enhancement and inhibition of photoluminescence (PL) in a hydrogenated amorphous silicon nitride (a-SiNx:H) microcavity fabricated with and without ammonia. A planar microcavity was realized that included a metallic back mirror and an a-SiNx:H-air or a metallic front mirror. The PL extends from the red part of the spectrum to the near infrared for the samples grown without ammonia. The PL is in the blue-green part of the spectrum for the samples grown with ammonia. The PL amplitude is enhanced and the PL linewidth is reduced with respect to those in bulk a-SiNx:H. The numerically calculated transmittance, reflectance, and absorbance spectra agree well with the experimentally measured spectra. (C) 1998 Optical Society of America [S0740-3224(98)00211-2] OCIS codes: 230.5750, 250.5230, 310.0310

Enhanced coupling to microsphere resonances with optical fibers

Cataloged from PDF version of article.Morphology-dependent resonances (MDR's) of polystyrene microspheres were excited by an optical fiber coupler. For optical elimination of the air-cladding interface at the optical fiber coupler surface, the microsphere was immersed in an index-matching oil. MDR's were observed, even though the relative refractive index between the microsphere and the oil was only 1.09. The observed MDR spectra are in good agreement with the generalized Lorenz-Mie theory and the localization principle. The scattering efficiency into each MDR is estimated as a function of the impact parameter by means of generalized Lorenz-Mie theory. (C) 1997 Optical Society of America

Donor-acceptor pair recombination in AgIn5S8 single crystals

Cataloged from PDF version of article.Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band. (C) 1999 American Institute of Physics

Morphology Dependent Resonances of a microsphere/optical fiber system

Cataloged from PDF version of article.Morphology-dependent resonances of microspheres sitting upon an index-matched single-mode fiber half-coupler are excited by a tunable 753-nm distributed-feedback laser. Resonance peaks in the scattering spectra and associated dips in the transmission spectra for the TE and TM modes are observed. We present a new model that describes this interaction in terms of the fiber-sphere coupling coefficient and the microsphere's intrinsic quality factor Q0. This model enables us to obtain expressions for the finesse and the Q factor of the composite particle-fiber system, the resonance width, and the depth of the dips measured in the transmission spectra. Our model shows that index matching improves the coupling efficiency by more than a factor of 2 compared with that of a non-index-matched system. © 1996 Optical Society of America

Operation of a novel hot electron vertical cavity surface emitting laser

The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is novel surface emitter consisting of a GaAs quantum well, within the depletion region, on the n side of Ga 1-xAlxAs p- n junction. It utilizes hot electron transport parallel to the layers and injection of hot electron hole pairs into the quantum well through a combination of mechanisms including tunnelling, thermionic emission and diffusion of 'lucky' carriers. Super Radiant HELLISH-1 is an advanced structure incorporating a lower distributed Bragg reflector (DBR). Combined with the finite reflectivity of the upper semiconductor-air interface reflectivity it defines a quasi- resonant cavity enabling emission output from the top surface with a higher spectral purity. The output power has increased by two orders of magnitude and reduced the full width at half maximum (FWHM) to 20 nm. An upper DBR added to the structure defines HELLISH-VCSEL which is currently the first operational hot electron surface emitting laser and lases at room temperature with a 1.5 nm FWHM. In this work we demonstrate and compare the operation of UB-HELLISH-1 and HELLISH-VCSEL using experimental and theoretical reflectivity spectra over an extensive temperature range. ©2003 Copyright SPIE - The International Society for Optical Engineering

Whispering gallery modes in photoluminescence and Raman spectra of a spherical microcavity with CdTe quantum dots: anti-Stokes emission and interference effects

We have studied the photoluminescence and Raman spectra of a system consisting of a polystyrene latex microsphere coated by CdTe colloidal quantum dots. The cavity-induced enhancement of the Raman scattering allows the observation of Raman spectra from only a monolayer of CdTe quantum dots. Periodic structure with very narrow peaks in the photoluminescence spectra of a single microsphere was detected both in the Stokes and anti-Stokes spectral regions, arising from the coupling between the emission of quantum dots and spherical cavity modes