Possible origin of 60-K plateau in the YBa2Cu3O(6+y) phase diagram

We study a model of YBa2Cu3O(6+y) to investigate the influence of oxygen ordering and doping imbalance on the critical temperature Tc(y) and to elucidate a possible origin of well-known feature of YBCO phase diagram: the 60-K plateau. Focusing on "phase only" description of the high-temperature superconducting system in terms of collective variables we utilize a three-dimensional semi microscopic XY model with two-component vectors that involve phase variables and adjustable parameters representing microscopic phase stiffnesses. The model captures characteristic energy scales present in YBCO and allows for strong anisotropy within basal planes to simulate oxygen ordering. Applying spherical closure relation we have solved the phase XY model with the help of transfer matrix method and calculated Tc for chosen system parameters. Furthermore, we investigate the influence of oxygen ordering and doping imbalance on the shape of YBCO phase diagram. We find it unlikely that oxygen ordering alone can be responsible for the existence of 60-K plateau. Relying on experimental data unveiling that oxygen doping of YBCO may introduce significant charge imbalance between CuO2 planes and other sites, we show that simultaneously the former are underdoped, while the latter -- strongly overdoped almost in the whole region of oxygen doping in which YBCO is superconducting. As a result, while oxygen content is increased, this provides two counter acting factors, which possibly lead to rise of 60K plateau. Additionally, our result can provide an important contribution to understanding of experimental data supporting existence of multicomponent superconductivity in YBCO.Comment: 9 pages, 8 figures, submitted to PRB, see http://prb.aps.or

Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga

We investigated the optical properties of epitaxial \textit{n}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. As the Ga doping concentration increased up to $6 \times 10^{20}$ cm$^{-3}$, the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-bandedge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the doping concentration was increased except for the highest doping level. It indicates that nonradiative transitions dominate at a low doping density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.Comment: accepted for publication for Applied Physics Letters 4 figure

Universal scaling for the spin-electricity conversion on surface states of topological insulators

We have investigated spin-electricity conversion on surface states of bulk-insulating topological insulator (TI) materials using a spin pumping technique. The sample structure is Ni-Fe|Cu|TI trilayers, in which magnetic proximity effects on the TI surfaces are negligibly small owing to the inserted Cu layer. Voltage signals produced by the spin-electricity conversion are clearly observed, and enhanced with decreasing temperature in line with the dominated surface transport at lower temperatures. The efficiency of the spin-electricity conversion is greater for TI samples with higher resistivity of bulk states and longer mean free path of surface states, consistent with the surface spin-electricity conversion

Chemical potential jump between hole- and electron-doped sides of ambipolar high-Tc cuprate

In order to study an intrinsic chemical potential jump between the hole- and electron-doped high-Tc superconductors, we have performed core-level X-ray photoemission spectroscopy (XPS) measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2-xSrxCuO4 and the electron-doped system Nd_2-xCexCuO4, we have estimated the true chemical potential jump between the hole- and electron-doped YLBLCO to be ~0.8 eV, which is much smaller than the optical gaps of 1.4-1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.Comment: 4 pages, 3 figure