130 research outputs found

    Beamlet scraping and its influence on the beam divergence at the BATMAN Upgrade test facility

    No full text
    For the ITER fusion experiment, two neutral beam injectors are required for plasma heating and current drive. Each injector supplies a power of about 17 MW, obtained from neutralization of 40 A (46 A), 1 MeV (0.87 MeV) negative deuterium (hydrogen) ions. The full beam is composed of 1280 beamlets, formed in 16 beamlet groups, and strict requirements apply to the beamlet core divergence (<7 mrad). The test facility BATMAN Upgrade uses an ITER-like grid with one beamlet group, which consists of 70 apertures. In a joint campaign performed by IPP and Consorzio RFX to better assess the beam optics, the divergence of a single beamlet was compared to a group of beamlets at BATMAN Upgrade. The single beamlet is measured with a carbon fiber composite tile calorimeter and by beam emission spectroscopy, whereas the divergence of the group of beamlets is measured by beam emission spectroscopy only. When increasing the RF power at low extraction voltages, the divergence of the beamlet and of the group of beamlets is continuously decreasing and no inflection point toward an overperveant beam is found. At the same time, scraping of the extracted ion beam at the second grid (extraction grid) takes place at higher RF power, supported by the absence of the normally seen linear behavior between the measured negative ion density in the plasma close to the extraction system and the measured extracted ion current. Beside its influence on the divergence, beamlet scraping needs to be considered for the determination of the correct perveance and contributes to the measured coextracted electron current

    Production of negative ions on graphite surface in Hâ‚‚/Dâ‚‚ plasmas: experiments and SRIM calculations

    Get PDF
    In previous works, surface-produced negative-ion distribution-functions have been measured in H2 and D2 plasmas using graphite surfaces (highly oriented pyrolitic graphite). In the present paper, we use the srim software to interpret the measured negative-ion distribution-functions. For this purpose, the distribution-functions of backscattered and sputtered atoms arising due to the impact of hydrogen ions on a-CH and a-CD surfaces are calculated. The srim calculations confirm the experimental deduction that backscattering and sputtering are the mechanisms of the origin of the creation of negative ions at the surface. It is shown that the srim calculations compare well with the experiments regarding the maximum energy of the negative ions and reproduce the experimentally observed isotopic effect. A discrepancy between calculations and measurements is found concerning the yields for backscattering and sputtering. An explanation is proposed based on a study of the emitted-particle angular-distributions as calculated by srim

    Enhancing surface production of negative ions using nitrogen doped diamond in a deuterium plasma

    Get PDF
    The production of negative ions is of significant interest for applications including mass spectrometry, particle acceleration, material surface processing, and neutral beam injection for magnetic confinement fusion. Methods to improve the efficiency of the surface production of negative ions, without the use of low work function metals, are of interest for mitigating the complex engineering challenges these materials introduce. In this study we investigate the production of negative ions by doping diamond with nitrogen. Negatively biased (−20-20 V or −130-130 V), nitrogen doped micro-crystalline diamond films are introduced to a low pressure deuterium plasma (helicon source operated in capacitive mode, 2 Pa, 26 W) and negative ion energy distribution functions (NIEDFs) are measured via mass spectrometry with respect to the surface temperature (30∘^{\circ}C to 750∘^{\circ}C) and dopant concentration. The results suggest that nitrogen doping has little influence on the yield when the sample is biased at −130-130 V, but when a relatively small bias voltage of −20-20 V is applied the yield is increased by a factor of 2 above that of un-doped diamond when its temperature reaches 550∘^{\circ}C. The doping of diamond with nitrogen is a new method for controlling the surface production of negative ions, which continues to be of significant interest for a wide variety of practical applications
    • …
    corecore